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2021
DOI: 10.1016/j.jssc.2021.122523
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An atomistic modelling investigation of the defect chemistry of SrTiO3 and its Ruddlesden-Popper phases, Srn+1TinO3n+1 (n = 1–3)

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Cited by 6 publications
(5 citation statements)
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“…Such a linear correlation is expected from the observation that La is incorporated as a La 3+ ion on Sr 2+ sites. Thus, La can act as a donor leading to n-type semiconducting behavior in the films, which has also been discussed in ref . Simultaneously with increasing La concentration, we observe a significant decrease of the charge carrier mobility μ from ∼2.0 to ∼0.6 cm 2 V –1 s –1 (Figure b), which is attributed to enhanced scattering at an increased number of ionized impurities caused by the incorporation of La 3+ ions on Sr 2+ sites and/or a saturation effect. ,, As the resistivity is related to the charge carrier mobility μ and n by ρ = ne μ, it decreases continuously with increasing La concentration (Figure c).…”
Section: Resultssupporting
confidence: 79%
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“…Such a linear correlation is expected from the observation that La is incorporated as a La 3+ ion on Sr 2+ sites. Thus, La can act as a donor leading to n-type semiconducting behavior in the films, which has also been discussed in ref . Simultaneously with increasing La concentration, we observe a significant decrease of the charge carrier mobility μ from ∼2.0 to ∼0.6 cm 2 V –1 s –1 (Figure b), which is attributed to enhanced scattering at an increased number of ionized impurities caused by the incorporation of La 3+ ions on Sr 2+ sites and/or a saturation effect. ,, As the resistivity is related to the charge carrier mobility μ and n by ρ = ne μ, it decreases continuously with increasing La concentration (Figure c).…”
Section: Resultssupporting
confidence: 79%
“…Our results indicate that the introduction of La in the gas phase under MOVPE conditions leads to the incorporation of La in the perovskite structure without a significant formation of a foreign phase and to n-type semiconducting electrical behavior. Several substitution schemes for La substitution in SrTiO 3 are described in ref . Due to the observed n-type conductivity of the films and the high oxygen partial pressure during deposition (see above), only the A-site substitution – La 3+ ions on Sr 2+ sites – is considered, which requires a charge compensation mechanism in order to achieve charge neutrality in the films.…”
Section: Resultsmentioning
confidence: 99%
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“…The cut-off range was 10 Å. The Ir 3+ –O 2− pair potential was custom-fitted against DFT relaxed surface slabs of Ir doped SrTiO 3 (fitting details in the Supplementary Information ), and the other pair potentials used were the Teter Buckingham pair potentials (detailed in Table 1 ) 50 . An Ir 3+ ion was dragged through the region highlighted by the blue box in Supplementary Fig.…”
Section: Methodsmentioning
confidence: 99%
“…[64] The pair potentials used are the Teter Buckingham pair potential, which were derived specifically for solid state ionic materials. [65] These simulations were designed to investigate the impact of additional surface oxygen vacancies on the thermodynamic driving force behind the exsolution. The detailed simulation design and pair potentials parameters are included in the Supporting Information.…”
Section: Supporting Informationmentioning
confidence: 99%