An assessment of the state-of-the-art 0.5 μm bulk CMOS technology for RF applications

A new concept for front‐end circuit integration: From single‐ended antenna to differential‐input connection without any external balun

“…A recent study [7] in which a 0.25-m MOSFET amplifier was compared with a HBT amplifier under the same topology showed essentially equivalent NF at 2.4 GHz (2.9 dB), with power dissipation roughly 20% higher in the MOS case. In addition, the large noise resistance R n makes the noise figure of the MOS device more sensitive to source impedance [8]. But the linearity discussed in [9] shows a better performance in MOS than BJT due to the MOSFET's square I-V law.…”

Microwave Noise Modeling of CMOS Transistors

“…Although there has been some research work (e.g. [5][6][7][8][9][10][11][12][13]) illustrating the basic trends between microwave noise parameters and device structures, all the observations have not isolated the various noise sources within the device.…”

A 2.5-V, 40-Gb/s decision circuit using SiGe BiCMOS logic

“…1, the and of a 130-nm nMOSFET are higher than those of 150-GHz SiGe HBTs for below around 600 mV. This marks a reversal of trends from the 0.5-m technology node [3] and further supports the use of MOSFETs in low-voltage high-speed applications. Still, even in 90-nm technologies where reported and values rival those obtained in SiGe HBTs [4], performance in benchmark high-speed digital circuits such as multiplexers [5] lags that of SiGe implementations [2].…”

“…3 indicates, the peak-current density remains approximately constant (between 0.3 and 0.4 mA/ m) as the technology scales. This is true for all new MOS generations as a result of the constant field scaling that has been applied since the 0.5-m technology node [3], [8]. Consequently, a current-density-centric design philosophy, similar to that which is commonly employed in bipolar designs [12], is more appropriate for foundry-independent design of MOS high-speed circuits than the -centric design philosophy found in even the most recent textbooks (e.g., [11]).…”