An Arbitrary High-Order DGTD Method With Local Time-Stepping for Nonlinear Field-Circuit Cosimulation

Zhang, Tiancheng; Bao, Huaguang; Gu, Pengfei; Ding, D. Z.; Werner, Douglas H.; Chen, Rushan

doi:10.1109/tap.2021.3098609

Cited by 11 publications

(4 citation statements)

References 41 publications

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“…而时域有限元方法通过正交基函数或不连续伽辽金技术将全局矩阵转化成众多单元矩阵, 可以实现线性复杂度的快速并行求解, 这两种方法分别称为时域谱元 (SETD)方法 [23] 及时域不连续伽辽金(DGTD)方法 [24] , 具有广阔的应用前景. DGTD方法主要通过将电流密度利用数值连续性通量引入电磁场方程中 [25] , 在分析不同器件和电路结构时形式较为统一, 不需要进行重复的公式推导. 更为重要的是, DGTD方法支持非共形网格的离散, 易于处理多尺度复杂器件结构, 灵活选择合适的时间迭代格式, 能够实现复杂微波器件结构的时空自适应求解, 是理想的复杂多尺度高功率微波器件电磁环境效应分析手段之一 [26] .…”

Section: 率微波器件的研制设计和工艺优化起到关键作用unclassified

“…采用DGTD方法对GaN基高功率微波器件求解时需要满足稳定性条件的限制, 对于多尺度非线性器件结构来说, 时间迭代步的选取受到最小离散网格尺寸及非线性效应的双重制约, 极大地影响了算法效率 [25,26] . 本文将局部时间步进技术(LTS) 引入GaN基高功率微波器件宽带电磁特性分析中, 能够实现多尺度网格及非线性场路耦合单元均有望提高GaN基高功率微波器件的分析效率.…”

Section: 高功率微波器件高效局部时间步进求解技术unclassified

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Efficient field-circuit co-simulation method for GaN-based high power microwave devices

Zhang,

Chen,

et al. 2023

Acta Phys. Sin.

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Due to the development of the three generation semiconductors represented by gallium nitride (GaN), the microwave power devices are developing towards higher power, higher efficiency and high integration. However, the electromagnetic field effects are more significant inside the device. As a result, circuit-level based simulation techniques can no longer satisfy the accuracy requirements of device design, which necessitates the urgent establishment of field-circuit co-simulation techniques to couple the active GaN devices with passive electromagnetic structures. Therefore, in this paper, a high-precision discontinuous Galerkin time-domain method is proposed to analyze the performance of GAN-based high-power microwave devices. The extracted large-signal compact model of the GaN HEMT is incorporated into the electromagnetic field equations. A local time-stepping technique is adopted to remove the constraints of nonlinear compact models and multiscale elements on the stability conditions of the global algorithm. Numerical comparisons between numerical simulations, experiments and software calculations demonstrate the excellent accuracy and efficiency of the proposed method, which can provide a theoretical analysis and design tool for the high reliability design of advanced high-power microwave devices.

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Section: 率微波器件的研制设计和工艺优化起到关键作用unclassified

Section: 高功率微波器件高效局部时间步进求解技术unclassified

Efficient field-circuit co-simulation method for GaN-based high power microwave devices

Zhang,

Chen,

et al. 2023

Acta Phys. Sin.

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“…The discontinuous Galerkin time-domain (DGTD) method is widely used in microwave device and antenna transient analysis [1,2,3,4,5], as well as multi-physical field simulation [6,7,8,9]. The DGTD method retains the characteristics of the finite element time-domain (FETD) method and uses numerical fluxes to separate unknowns shared among elements allowing them to be independent.…”

Section: Introductionmentioning

confidence: 99%

Novel adaptive locally implicit scheme of the discontinuous Galerkin time-domain method for distributed transient simulation of antennas and resonance models

Lin

et al. 2022

IEICE Electron. Express

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An efficient distributed adaptive locally implicit scheme for the discontinuous Galerkin time-domain method is proposed in this letter. In comparison to the traditional methods, the proposed method employs an adjustable time scale to adaptively reduce storage and computational complexity. The implicit and explicit regions are distributed into the local storage of nodes to achieve load balance between them. Numerical results demonstrate the effectiveness of this method and confirmed that it can be used for the fast transient simulation of resonance models.

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“…处理薄层问题 [4] 。考虑到精确建模是一种成本很高的计算方式，即便采用局域时间步或者其他优化方式也很难快速求解。为快速求解，可对薄层做近似处理，采用另外的边界条件来描述薄层。例如引入极化电流得到的经典可穿透薄层边界条件 [5][6][7] 。随着研究的深入，研究者也研究了不同类型的薄层问题。例如导电类型薄层，弯曲薄层等 [8][9][10] 。在数值算法中，也有研究者引入新的薄层边界条件 [11,12] 。此外对于薄层的几何特征而言，FDTD 对平面类型薄层表现很好，对于弯曲薄层需要设计复杂插值拟合修正方案。 DGTD 是一种新型有限元算法，具备非结构网格建模及显式时域迭代的优势，目前处于快速发展阶段 [13][14][15] 。对于 DGTD 算法，薄层问题也是一个难点，精确建模非常消耗计算资源，即便引入局域时间步方案也很难快速处理 [16] 入深度；2.薄层曲率半径远大于薄层透入深度及薄层厚度 [17] 。很明显的，此情形不太适合精确建模，精确建模耗费资源过高。采用近似方案是顺理成章的选择。图 1 中薄层两侧标注为了自由空间，需要指出，本文方案也支持将上侧或下侧空间设置为其它介质。假设薄层的介电系数为…”

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A robust discontinuous Galerkin time domain algorithm for penetrable thin layers

Yang¹,

Wei²,

Li³

et al. 2023

Acta Phys. Sin.

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The thin layer problem is common in some engineering cases, such as a coating target or dielectric radome. If the skin depth of the medium behind the thin layer is much smaller than the media scale, the transmission line impedance boundary can be used to solve. When both sides of the thin layer are free space or the skin depth of the medium behind is greater than or comparable to the scale of the medium, the transmission line impedance boundary condition is not applicable. Such problems require incident and reflected wave data and are also known as penetrable thin-layer problems. When dealing with penetrable thin-layer problems, we need to give the electromagnetic wave data on both sides. In addition, the thin layer problem can be attributed to multi-scale problems. The EM simulation is difficult to implement because of the high resource consumption of accurate modeling. Considering that the accurate modeling is very expensive, and the mesh-size difference between the thin layer region and the surrounding ordinary region is too large will seriously affect the quality of the elements (tetrahedrons). It is difficult to solve quickly in the time-domain discontinuous Galerkin method even by using local time steps or other optimization methods. To get a fast solution, the approximate boundary condition can be used to describe the thin layer, DGTD also has the advantage of the geometric fitting property. If a thin layer model is curved, we can build a conformal geometric model to deal with the thin layer, thus avoiding the complicated interpolation correction scheme. In this paper, A Robust DGTD Method for penetrable thin layers is proposed. In our study, we find that the current excitation scheme is prone to divergence when dealing with large dielectric coefficients and its robustness is poor. To solve this problem, we use the electromagnetic field correction scheme in DGTD to deal with the thin layer problems. In addition, engineering problems may encounter multiple thin layers. In this paper, a simulation scheme for multiple thin layers is proposed and relevant numerical examples are given as verification. The results illustrate the accuracy and effectiveness of the method in this paper, and the method in this paper can be used for the fast calculation of complex thin layer problems.

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An Arbitrary High-Order DGTD Method With Local Time-Stepping for Nonlinear Field-Circuit Cosimulation

Cited by 11 publications

References 41 publications

Efficient field-circuit co-simulation method for GaN-based high power microwave devices

Efficient field-circuit co-simulation method for GaN-based high power microwave devices

Novel adaptive locally implicit scheme of the discontinuous Galerkin time-domain method for distributed transient simulation of antennas and resonance models

A robust discontinuous Galerkin time domain algorithm for penetrable thin layers

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