An approximate model for the graded-base transistor

Grung, B.L.

doi:10.1016/0038-1101(81)90013-7

Cited by 4 publications

(1 citation statement)

References 33 publications

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“…In recent years, non-homogeneous thin film structures of low-conductivity materials have become of increasing experimental and theoretical interest (Grung 1981, Chatterjee andMarshak 1983, Klose eta1 1983. By applying a suitable preparation procedure (e.g.…”

Section: Introductionmentioning

confidence: 99%

On non-dispersive multiple-trapping transient currents in non-homogeneous layers

Chybicki

1990

J. Phys.: Condens. Matter

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Non-dispersive transient currents in non-homogeneous films with a single discrete trap level have been calculated, the non-homogeneity consisting in spatial variations of trap depths or the presence of constant built-in electric fields in the limit cases of shallow and deep traps. Both kinds of spatial non-homogeneity may result in identical shapes of transients. Methods for determination of the spatial variations of trap depth and internal built-in electric field on the basis of experimental data are discussed.

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Section: Introductionmentioning

confidence: 99%

On non-dispersive multiple-trapping transient currents in non-homogeneous layers

Chybicki

1990

J. Phys.: Condens. Matter

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On Theoretical Modelling of Continuously Inhomogeneous Semiconductor Structures

Henniger

Keiper

1985

Physica Status Solidi (b)

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Starting from Boltzmann's equation the system of particle and energy rate equations is derived und discussed for describing the carrier transport in continuously inhomogeneous semiconductors. Special attention is paid to the dependence of the Shockley-Read-Hall recombination rate on the carrier temperatures. The 80 obtained generalization of the net recombination rate takes into consideration the effects of local carrier heating or cooling. A comment to the standard conception of field dependent mobilities is given.Das System der Teilchen-und Energiebilanzgleichungen zur klassischen Beschreibung des Ladungstriigertransports in kontinuierlich inhomogenen Halbleitern wird ausgehend von der Boltzmanngleichung hergeleitet und diskutiert. Besondere Aufmerksamkeit wird der Abhangigkeit der Shockley-Read-Hall-Rekombinationsrate von den Ladungstragertemperaturen gewidmet. Die so erhaltene Verallgemeinerung der Nettorekombinationsrate beriicksichtigt Effekte lokaler Ladungstrageraufheizung bzw. -abkiihlung. Zum Standardkonzept feldabhangiger Beweglichkeiten wird Stellung genommen.

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A note on ifβUP and βDOWN in I2L transistors

Wisted¹,

Warner

1982

Solid-State Electronics

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An approximate model for the graded-base transistor

Cited by 4 publications

References 33 publications

On non-dispersive multiple-trapping transient currents in non-homogeneous layers

On non-dispersive multiple-trapping transient currents in non-homogeneous layers

On Theoretical Modelling of Continuously Inhomogeneous Semiconductor Structures

A note on ifβUP and βDOWN in I2L transistors

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