An approach to suppress the blue-shift of photoluminescence peaks in coupled multilayer InAs/GaAs quantum dots by high temperature post-growth annealing

Adhikary, Sourav; Ghosh, Kankat; Chowdhury, Souma; Halder, N. C.; Chakrabarti, Subhananda

doi:10.1016/j.materresbull.2010.06.023

Cited by 14 publications

(2 citation statements)

References 31 publications

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“…The dot stacking results from the elastic strain that propagates from the underlying dots, causing nucleation. Dot formation at these sites is thermodynamically favorable [14]. Strain-coupling produces high quality QDs with uniform dot-size distribution and a larger absorption area.…”

Section: Introductionmentioning

confidence: 99%

Enhancement in Peak Detectivity and Operating Temperature of Strain-Coupled InAs/GaAs Quantum Dot Infrared Photodetectors by Rapid Thermal Annealing

Ghadi

Shetty

Adhikary

et al. 2015

IEEE Trans. Nanotechnology

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We report the effects of rapid thermal annealing on the optical, structural, and device properties of 30 layer straincoupled InAs/GaAs quantum dot infrared photodetectors. Stability in the photoluminescence peak is observed for annealing up to 800°C, which has not been previously reported. Cross-sectional transmission electron microscopy images show preservation of quantum dots is observed up to 800°C. Device with total capping thickness of 150 nm annealed at 750°C exhibit a fivefold enhancement in spectral intensity compared to as-grown devices and increase in the temperature of detector operation is observed from 100 to 140 K from the same device. The annealed devices exhibited a single-order enhancement in peak detectivity compared to as-grown quantum dot infrared photodetector. Index Terms-Infrared detectors, photodetectors, photoluminescence, quantum dots. Subhananda Chakrabarti (M'06) received the M.Sc. and Ph.D. degrees from the from 2005 to 2006, and a Senior Researcher (RA2) with the University of Glasgow, Glasgow, U.K., from 2006 to 2007. He joined the Department of Electrical Engineering, IIT Bombay, Mumbai, India, in 2007.He has extensively researched molecular beam epitaxial growth, characterization, and fabrication of semiconductor optoelectronic materials and devices, such as quantum dot laser, intersubband detectors, and vertical-cavity surface-emitting lasers. He has authored or coauthored more than 160 papers in journals and conferences. He has also coauthored a couple of book chapters on intersubband quantum dot detectors.

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Section: Introductionmentioning

confidence: 99%

Enhancement in Peak Detectivity and Operating Temperature of Strain-Coupled InAs/GaAs Quantum Dot Infrared Photodetectors by Rapid Thermal Annealing

Ghadi

Shetty

Adhikary

et al. 2015

IEEE Trans. Nanotechnology

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“…Strain-coupling produces high quality QDs with uniform dot-size distribution and a larger absorption area. Multilayer stacking results in higher stability during thermal treatment and increases the absorption coefficient [9][10]. High annealing temperatures produce a blue shift in the emission wavelength that results from inter-diffusion of the surface atoms at the QD interface which reduces the dot size.…”

Section: Introductionmentioning

confidence: 99%

A detail investigation on quaternary and ternary capped strain coupled quantum dots based infrared photodetectors and effect of rapid thermal annealing temperature

Ghadi

Adhikary

Shetty

et al. 2015

Image Sensing Technologies: Materials, Devices, Systems, and Applications II

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In this report, we are comparing two different QDIP architectures capped with quaternary and ternary layer of different barrier thicknesses and effect of rapid thermal annealing on the device performances. Low temperature power dependent PL spectra exhibit a multimodal distribution of the QDs in all the heterostructures which has been confirmed by XTEM. High thermal stability upto 800°C i.e. minimum PL peak shift in terms of wavelength was observed in all quaternary coupled devices with annealing compared to ternary (it was up to 700°C) capped QDIP.The vertical strain propagating from underlying QDs prevents the inter-diffusion by maintaining a strain relaxed state. Minimum Dark current density was observed in quaternary capped QDIP with total capping thickness of 15nm and one order enhancement in detectivity compared to ternary. Quaternary capped QDIP with 12 nm total capping thickness was most red shifted and a peak spectral response was observed at 7.3µm. Compared to ternary all quaternary devices showed narrow spectrum with less than 20% spectral line-width. Quaternary capped QDIP with 15 nm total capping thickness was annealed and devices were fabricated using 2 step lithography process. For 750°C annealed QDIP a maximum operating temperature of 140K with 5-fold increase in photocurrent compared to other was observed.

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Optimizations for Quaternary Alloy (InAlGaAs)-Capped InAs/GaAs Multilayer Quantum Dots

Mandal

Chakrabarti

2017

Impact of Ion Implantation on Quantum Dot Heterostructures and Devices

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An approach to suppress the blue-shift of photoluminescence peaks in coupled multilayer InAs/GaAs quantum dots by high temperature post-growth annealing

Cited by 14 publications

References 31 publications

Enhancement in Peak Detectivity and Operating Temperature of Strain-Coupled InAs/GaAs Quantum Dot Infrared Photodetectors by Rapid Thermal Annealing

Enhancement in Peak Detectivity and Operating Temperature of Strain-Coupled InAs/GaAs Quantum Dot Infrared Photodetectors by Rapid Thermal Annealing

A detail investigation on quaternary and ternary capped strain coupled quantum dots based infrared photodetectors and effect of rapid thermal annealing temperature

Optimizations for Quaternary Alloy (InAlGaAs)-Capped InAs/GaAs Multilayer Quantum Dots

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