An approach to manufacture a heterobipolar transistors in thin film structures. On the method of optimization

On Optimization of Manufacturing of Field-Effect Heterotransistors Frame-work a Single-Stage Multi-path Operational Amplifier, To Increase their Density

“…3a for diffusion doping of materials and Fig. 3b for ion doping of materials) [15][16][17][18][19][20]. Framework the criteria one shall approximate real distributions of concentration of dopant by ideal step-wise distribution ψ (x,y,z).…”

On Modification of Properties of P-N-Junctions During Overgrowth

“…We calculate distribution of concentration of dopant in space in time by method of averaging of function corrections [25][26][27][28][29][30]. To use the method we re-write Eqs.…”

“…To use the method we re-write Eqs. (1), (3) and (5) We determined average values of the first-order approximations of the considered concentrations by using the following standard relations [25][26][27][28][29][30] ( )…”

“…We used standard iterative procedure of method of averaging of function corrections to calculate the second-and higher-order approximations of the considered concentrations [25][26][27][28][29][30]. Framework the procedure to calculate approximations of the n-th order of the above concentrations we replace the functions C(x,y,z,t), I(x,y,z,t), V(x,y,z,t), Φ I (x,y,z,t) and Φ V (x,y,z,t) in the Eqs.…”

“…Framework the procedure to calculate approximations of the n-th order of the above concentrations we replace the functions C(x,y,z,t), I(x,y,z,t), V(x,y,z,t), Φ I (x,y,z,t) and Φ V (x,y,z,t) in the Eqs. (1), (3), (5) We calculate average values of the second-order approximations of required functions by using the following standard relation [25][26][27][28][29][30] …”