An approach of lateral RF MEMS switch for high performance

Tang, Min; Agarwal, Ajay; Li, J.; Zhang, Q.X.; Win, P.; Huang, Jing‐Mei; Liu, A.Q.

doi:10.1109/dtip.2003.1287016

Cited by 11 publications

(6 citation statements)

References 4 publications

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“…The vast majority of RF MEMS switches today utilize thin-film metals as structural materials in order to decrease the RF loss of these devices. Devices that have attempted to utilize non-metallic structural materials [4], [5], [6], [7], [8] have not been successful due to poor RF performance and/or excessive process complexity that counteracts the advantages offered by single-crystal silicon.…”

Section: Introductionmentioning

confidence: 99%

A single-crystal silicon DC-40 GHz RF MEMS switch

Fruehling

Pimpinella

Nordin

et al. 2009

2009 IEEE MTT-S International Microwave Symposium Digest

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This paper presents a new DC-40 GHz RF MEMS switch whose moving part is made of single-crystal silicon (SCS). Unlike thin-film metals commonly employed in RF MEMS switches, SCS is essentially defect-free, has well known and repeatable material properties and is virtually stress free. This makes the switch design insensitive to process variations and amenable to high-yield manufacturing. Measured RF switches exhibit an on state insertion loss of less than 0.3 dB and an off state isolation of higher than 30 dB up to 40 GHz. Measured switching time is less than 4 us.

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Section: Introductionmentioning

confidence: 99%

A single-crystal silicon DC-40 GHz RF MEMS switch

Fruehling

Pimpinella

Nordin

et al. 2009

2009 IEEE MTT-S International Microwave Symposium Digest

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“…One should mention that the time associated with the electrothermal cooling and heating is much longer than the time associated to the vibration of the studied arc. The associated thermal time coefficient is defined by [17], where l, b, g, ρ, c, KSi and Kair present the length, width of the arc beam and the gap between the arc beam and the substrate, the silicon density, the silicon heat capacitance and the thermal conductivity of the silicone and the air, respectively. Fs is the beam shape factor that presents the correction term calculated based on the geometry of the arc beam using the formula given by [18], where h is the thickness of the arc beam.…”

Section: Resultsmentioning

confidence: 99%

Scalable Pressure Sensor Based on Electrothermally Operated Resonator

Hajjaj

Hafiz

Alcheikh

et al. 2017

Volume 4: 22nd Design for Manufacturing and the Life Cycle Conference; 11th International Conference on Micro- And Nanosystems

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We experimentally demonstrate a new pressure sensor that offers the flexibility of being scalable to small sizes up to the nano regime. Unlike conventional pressure sensors that rely on large diaphragms and big-surface structures, the principle of operation here relies on convective cooling of the air surrounding an electrothermally heated resonant structure, which can be a beam or a bridge. This concept is demonstrated using an electrothermally tuned and electrostatically driven MEMS resonator, which is designed to be deliberately curved. We show that the variation of pressure can be tracked accurately by monitoring the change in the resonance frequency of the resonator at a constant electrothermal voltage. We show that the range of the sensed pressure and the sensitivity of detection are controllable by the amount of the applied electrothermal voltage. Theoretically, we verify the device concept using a multi-physics nonlinear finite element model. The proposed pressure sensor is simple in principle and design and offers the possibility of further miniaturization to the nanoscale.

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“…Thus, tungsten and molybdenum are not suitable as structural material. From the obtained results, it was found that the evaporated aluminum is one of the suitable candidates as a contact material [53].…”

Section: Selection Of Structural Materials Of Rf Mems Switch With Capamentioning

confidence: 96%

Analytical Approach in the Development of RF MEMS Switches

et al. 2018

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Currently, the technology of microelectromechanical systems is widely used in the development of high-frequency and ultrahigh-frequency devices. The most important requirements for modern and advanced devices of the ultra-high-frequency range are the reduction of weight and size characteristics, power consumption with an increase in their functionality, operating frequency and level of integration. Radio frequency microelectromechanical switches are developed using the technology of the manufacture of CMOS-integrated circuits. Integrated radio frequency control circuits require low control voltages, the high ratio of losses to the isolation in the open and closed condition, high performance and reliability. This review is devoted to the analytical approach based on the knowledge of materials, basic performance indices and mechanisms of failure, which can be used in the development of radio-frequency microelectromechanical switches.

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An approach of lateral RF MEMS switch for high performance

Cited by 11 publications

References 4 publications

A single-crystal silicon DC-40 GHz RF MEMS switch

A single-crystal silicon DC-40 GHz RF MEMS switch

Scalable Pressure Sensor Based on Electrothermally Operated Resonator

Analytical Approach in the Development of RF MEMS Switches

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