An approach for improving the carriers transport properties of a-Si:H/c-Si heterojunction solar cells with efficiency of more than 27%

Wen, Xixing; Zeng, Xiangbin; Liao, Wugang; Lei, Qingsong; Yin, Shu

doi:10.1016/j.solener.2013.07.019

Cited by 54 publications

(26 citation statements)

References 16 publications

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“…Hydrogenated amorphous Si is used for solar energy conversion in several ways. It is employed to replace c-Si in conventional single junction photovoltaic cells mostly because of its cost effectiveness (Myong and Jeon, 2014), and in intrinsic a-Si/c-Si (Myong and Jeon, 2014) or doped a-Si:H/intrinsic a-Si/c-Si heterojunction PV cells (Mitchell et al, 2009;Mishima et al, 2011;Fujiwara and Kondo, 2007;Wen et al, 2013) again with higher efficiency with respect to the c-Si homojunction thanks to its wider band-gap, i.e. greater total energy range of collected sunlight.…”

Section: Introductionmentioning

confidence: 99%

Effect of heat treatments on the properties of hydrogenated amorphous silicon for PV and PVT applications

Frigeri¹,

Serényi

Szekrényes

et al. 2015

Solar Energy

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Section: Introductionmentioning

confidence: 99%

Effect of heat treatments on the properties of hydrogenated amorphous silicon for PV and PVT applications

Frigeri¹,

Serényi

Szekrényes

et al. 2015

Solar Energy

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“…The surface recombination at the a-Si/c-Si interface is 1.0 × 10 7 cms −1 . The defect state [6] setting for p + -a-Si, i-a-Si, and n + -a-Si is shown in Figure 2. Light trapping is added on both front and back surfaces.…”

Section: Hit Solar Cell Fabricationmentioning

confidence: 99%

“…AFORS-HET (Automat for Simulation of Heterostructures) was developed specifically for heterojunction solar cell, which can simulate any type of semiconductor tandem materials with random combination. Researchers investigated HIT solar cell performance using AFORS-HET simulation and obtained valuable results [4][5][6]. In this study, AFORS-HET simulation was applied to investigate the HIT solar cell with metallurgical Si.…”

Section: Introductionmentioning

confidence: 99%

HIT Solar Cells with N-Type Low-Cost Metallurgical Si

Xing

Bian

Liu

et al. 2018

Advances in OptoElectronics

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A conversion efficiency of 20.23% of heterojunction with intrinsic thin layer (HIT) solar cell on 156 mm × 156 mm metallurgical Si wafer has been obtained. Applying AFORS-HET software simulation, HIT solar cell with metallurgical Si was investigated with regard to impurity concentration, compensation level, and their impacts on cell performance. It is known that a small amount of impurity in metallurgical Si materials is not harmful to solar cell properties.

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“…Amorphous silicon/crystalline silicon heterojunction solar cells have attracted increasing attention in recent research; particularly because of the higher open-circuit voltages they can offer for the production of high efficiency solar cells as compared to homojunction cells [1][2][3]. Although thin intrinsic a-Si:H layers have commonly been inserted between the doped active layers of solar cells to enhance the performance of the cell structure, the role of the thin a-Si:H intrinsic layer at the a-Si:H/c-Si heterointerface still remains not well understood [4][5][6].…”

Section: Introductionmentioning

confidence: 99%

“…The literature indicates that an intrinsic hydrogenated amorphous silicon (a-Si:H) layer can be deposited between an emitter layer and a c-Si substrate, or a BSF layer and a cSi substrate to achieve a maximum surface passivation effect for the c-Si substrate [1,2,[7][8][9]. Researchers have therefore, become increasingly interested in achieving control over thin intrinsic a-Si:H layer behavior and passivation properties, and several simulation models have been developed to simulate the performance of thin a-Si:H/c-Si heterojunction solar cells.…”

Section: Introductionmentioning

confidence: 99%

Analytical study of a-Si:H/c-Si thin heterojunction solar cells with back surface field

Krichen

Arab

2015

J Comput Electron

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In this paper, the high efficiency TCO-n(aSi:H)-i(aSi:H)-p(c-Si)-p + (aSi:H) heterojunction with intrinsic thin-layer (HIT) solar cell is analyzed. The effects of the intrinsic thin-layer and the back surface field (BSF) on the photovoltaic parameters of thin solar cells are discussed. The analytical results show that the intrinsic layer inserted at the a-Si:H/c-Si interface decreases the density of interface states. If the interface state density is lower than 10 11 cm −2 in the presence of an intrinsic thin layer a-Si:H, the effect of recombination current density on the photovoltaic parameters becomes low. The BSF formed by hydrogenated amorphous silicon layer can increase the conversion efficiency by about 2.6 % and the open-circuit voltage to ∼80 mV as compared to the HIT solar cell wherein the BSF is realized by crystalline silicon. The results obtained from the simulation studies are in good agreement with the literature, and might open promising opportunities for enhancing the design parameters of HIT cells. Interface state density α c−Si (α a−Si ) Absorption coefficient in the c-Si (aSi:H) φ (λ) Incident photon flux R (λ) Reflection coefficient at the front surface H Cell thickness W B Base thickness S p (S n ) Recombination velocity at the front (back) contact V th Thermal velocity J ph,T (λ) Total photocurrent density J 0D Reverse saturation current density in the emitter and base region J 0Rb Recombination current density in the bulk J 0Ri Recombination current density at the heterojunction interface J sc Short-circuit current density V oc Open-circuit voltage η Cell efficiency FF Fill factor P in Power density output R s (R sh ) Series (shunt) resistance 123 J Comput Electron

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An approach for improving the carriers transport properties of a-Si:H/c-Si heterojunction solar cells with efficiency of more than 27%

Cited by 54 publications

References 16 publications

Effect of heat treatments on the properties of hydrogenated amorphous silicon for PV and PVT applications

Effect of heat treatments on the properties of hydrogenated amorphous silicon for PV and PVT applications

HIT Solar Cells with N-Type Low-Cost Metallurgical Si

Analytical study of a-Si:H/c-Si thin heterojunction solar cells with back surface field

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