An approach based on particle swarm computation to study the electron mobility in wurtzite GaN

Djeffal, F.; Arar, D.; Lakhdar, N.; Bendib, T.; Dibi, Z.; Chahdi, M.

doi:10.1016/j.mejo.2008.07.041

“…The mobility approaches a T -3/2 dependence due to phonon scattering at high temperature but at low temperature, the mobility is increasing monotonically with temperature depending on a T -3/2 due to impurity scattering. Our results agree also with F. Djeffal et al [19] who have cal- culated electron mobility at various temperature upto 800 K.…”

Section: Resultssupporting

confidence: 92%

Effect of dislocation scattering on electron mobility in GaN

Karthik¹,

Mallick²

2011

NS

1

0

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This paper presents the calculation of electron mobility of GaN at various temperatures using Relaxation Time Approximation (RTA) method. The effect of dislocation scattering on electron mobility in GaN is studied. We have discussed about the role of important scattering mechanisms in GaN. The electron mobility values thus obtained are compared with other available experimental and theoretical results.

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“…The compilation of the n-GaN electron mobility data is recorded in Figure 2 [32]. This data has been commonly fitted based on the Caughey-Thomas model [33] or the improved version by Djeffal et al [34] that incorporates both temperature and doping concentration. As depicted, the reference mobility matched with the the model.…”

Section: B Theoretical Modelmentioning

confidence: 99%

Advancing High-Volume GaN Manufacturing: Precision Simulation of Electrical and Geometrical Deviations

Fajri,

Kopp,

Noorden

et al. 2024

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0

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Manufacturing process deviations pose significant challenges in GaN manufacturing especially when modern technologies demand extreme chip densities. More than a thousand of each of three distinct GaN-based flip-chips were manufactured in our highly controlled cleanroom. By integrating Monte Carlo and finite element methods in the simulations which relies on the theoretical models, the results were validated by comparing the voltage measurements of the three thousand manufactured chips. Remarkably, validation was successful considering the replication of voltage deviations affecting the three designs equivalently in each specific wafer. In addition, comparing the three designs, Chip A emerged as the optimal choice for low current resistivity. Looking ahead, our theoretical modeling and simulation hold promise for high-accuracy predictions in high-volume GaN-based chip manufacturing, enhancing reliability and performance.

show abstract

“…The compilation of the n-GaN electron mobility data is recorded in Figure 2 [32]. This data has been commonly fitted based on the Caughey-Thomas model [33] or the improved version by Djeffal et al [34] that incorporates both temperature and doping concentration. As depicted, the reference mobility matched with the the model.…”

Section: B Theoretical Modelmentioning

confidence: 99%

Advancing High-Volume GaN Manufacturing: Precision Simulation of Electrical and Geometrical Deviations

Fajri,

Kopp,

Noorden

et al. 2024

Preprint

0

View full text Add to dashboard Cite

Manufacturing process deviations pose significant challenges in GaN manufacturing especially when modern technologies demand extreme chip densities. More than a thousand of each of three distinct GaN-based flip-chips were manufactured in our highly controlled cleanroom. By integrating Monte Carlo and finite element methods in the simulations which relies on the theoretical models, the results were validated by comparing the voltage measurements of the three thousand manufactured chips. Remarkably, validation was successful considering the replication of voltage deviations affecting the three designs equivalently in each specific wafer. In addition, comparing the three designs, Chip A emerged as the optimal choice for low current resistivity. Looking ahead, our theoretical modeling and simulation hold promise for high-accuracy predictions in high-volume GaN-based chip manufacturing, enhancing reliability and performance.

show abstract

An approach based on particle swarm computation to study the electron mobility in wurtzite GaN

Cited by 6 publications

References 21 publications

Effect of dislocation scattering on electron mobility in GaN

Effect of dislocation scattering on electron mobility in GaN

Advancing High-Volume GaN Manufacturing: Precision Simulation of Electrical and Geometrical Deviations

Advancing High-Volume GaN Manufacturing: Precision Simulation of Electrical and Geometrical Deviations

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