2017
DOI: 10.1002/admt.201700159
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An Application of Diazonium‐Induced Anchoring Process in the Fabrication of Micro‐Electromechanical Systems

Abstract: International audienceIn situ generation of diazonium cations and their subsequent reduction and grafting is a versatile technique to modify a variety of substrates. In the absence of a conducting substrate, the grafting of aminophenylene layer can be achieved with assistance of a reducing agent (diazonium-induced anchoring process—DIAP). Here, a systematic investigation of the possible effect of the type substrate on the thickness of aminophenyl layer is carried out using Fe powder reducing agent. The study i… Show more

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Cited by 11 publications
(11 citation statements)
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“…It is interesting to see the presence of sulfur on the grafted surface arising from the dodecyl sulfonate anionic surfactant in the grafting process, which makes the MMA monomer soluble in the emulsion solution. As the grafted polymer film is significantly thicker than the inelastic mean-free-path of silicon electrons, we do not observe the signal originating from the Si substrate (see also Figure S1).…”
Section: Resultsmentioning
confidence: 82%
See 1 more Smart Citation
“…It is interesting to see the presence of sulfur on the grafted surface arising from the dodecyl sulfonate anionic surfactant in the grafting process, which makes the MMA monomer soluble in the emulsion solution. As the grafted polymer film is significantly thicker than the inelastic mean-free-path of silicon electrons, we do not observe the signal originating from the Si substrate (see also Figure S1).…”
Section: Resultsmentioning
confidence: 82%
“…Figure presents the XPS survey spectra of the pristine Si and the polymer film surfaces. The pristine surface shows all the characteristics of p-type Si substrate, i.e., Si 2s, Si 2p, and O 1s peaks . Full XPS characterization of p-type Si can be found elsewhere while we focus on the chemical characteristics of the polymer grafted surface, which is mainly composed of O 1s (530 eV), N 1s (400 eV), and C 1s (285 eV).…”
Section: Resultsmentioning
confidence: 99%
“…[24] The satellite peaks are at 859.3 and 876.6 eV, corresponding to the Ni 2p 3/2 and 2p 1/2 of Ni 0 . [25] The BEs at 855.0 and 872.3 eV are attributed to Ni 2+ . [24] The BEs at 856.0 and 873.5 eV are attributed to the Ni 3+ , and the corresponding satellite peaks are loaded at 862.0 and 879.3 eV.…”
Section: Resultsmentioning
confidence: 97%
“…Since the discovery of diazonium-induced anchoring process in the years in 2010, [18] applications of this one-step chemical process have been extended in various areas, protection against corrosion of stainless steel [19] or enhancement of desalination performance. [20] Especially for the fabrication of micro/nano electromechanical systems, in the first communication in 2017, [16] we demonstrated the potential application of this diazonium-based process. Last year, we have integrated our simple method into the fabrication of microcavities etched inside the KMPR photoresist polymer film.…”
Section: Doi: 101002/adem202000598mentioning
confidence: 88%
“…Here we propose the one-step diazonium induced anchoring process to modify silicon nitride ceramic as it has been proven efficient toward direct covalent functionalization of various surfaces (semiconductors, conductors, and plastics) with amine-terminated groups without requiring any surface pre-treatment. [11,16,17] We thus characterize the pristine and modified surfaces with X-ray photoelectron spectroscopy to get more insight into the diazonium modification. Since the discovery of diazonium-induced anchoring process in the years in 2010, [18] applications of this one-step chemical process have been extended in various areas, protection against corrosion of stainless steel [19] or enhancement of desalination performance.…”
Section: Doi: 101002/adem202000598mentioning
confidence: 99%