An Anisotropic Photon Drag Effect in Nonspherical‐Band Cubic Semiconductors

Abstract

The observation and a study of an anisotropy is reported of the photon drag hole current induced by linearly polarized CO, laser light in p-Ge and p-InSb, which is due to the nonspherical structure of the isoenergetic surfaces in the valence band. Besides the drag current longitudinal with respect to the photon momentum, a transverse current component appears in cases where the direction of light propagation is not along the [loo] axis. The transverse current is an oscillatory function of the angle between the electric field vector and the orientation of the transverse contacts. The magnitude of longitudinal current and its polarity reversal temperature in p-Ge depend to a considerable extent on the crystallographic orientation of the samples with respect t o the photon momentum. The experimental data are in agreement with the theory.

Influence of Electrochemical Hydrogenation on the Circular Photocurrent in the Ag/Pd Nanocomposite

“…, leads to the generation of a photocurrent due to the transfer of a momentum of incident photons to the charge carriers during intraband or interband energy transitions. PDE was also found in different semiconductors ( p ‐InSb, GaAs), semiconductor quantum structures GaAs/AlGaAs, in metals and in two‐dimensional structures of different composition, including films of semimetals and thin metal films . In contrast to CPGE, PDE can also be observed in centrosymmetric media .…”

The Surface Photogalvanic and Photon Drag Effects in Ag/Pd Metal-Semiconductor Nanocomposite

“…The electron drag by photons was first described in reference [19]. The PDE was found in semiconductors (for example, p-InSb [20], GaAs [21], tellurium [22,23], Bi [24]), in semiconductor quantum structures GaAs/AlGaAs [25], in metals [6,26], in plasma [27] and in two-dimensional structures of different composition [28][29][30][31], including films of bismuth (semimetal) [32] and metals [29,33], as well as in metal nanowires [34].…”

INFLUENCE OF TEMPERATURE IMPACT IN VACUUM ON THE POLARIZATION-ORIENTATION SENSITIVE PHOTOCURRENT IN Ag/Pd FILMS

“…Под ПОЧФТ подразумевается фототок, амплитуда и полярность которого зависят от поляризации и направления волнового вектора возбуждающего излучения. ПОЧФТ возбуждается линейно, эллиптически или циркулярно поляризованным светом и может быть обусловлен различными механизмами, такими как эффект увлечения [1], циркулярный фотогальванический эффект [2] или поверхностный фотогальванический эффект [3]. Такой фототок был обнаружен во множестве материалов.…”

“…ВЛИЯНИЕ ТЕМПЕРАТУРНОГО ВОЗДЕЙСТВИЯ В ВАКУУМЕ НА ПОЛЯРИЗАЦИОННО-ОРИЕНТАЦИОННО ЧУВСТВИТЕЛЬНЫЙ ФОТОТОК В НАНОКОМПОЗИТНЫХ Ag/Pd ПЛЁНКАХ 1 САУШИН А. C., 1 ЗОНОВ Р. Г., 1 АЛЕКСАНДРОВИЧ Е. В., 2 КОСТЕНКОВ Н. В., 1 МИХЕЕВ Г. М. 1 Удмуртский федеральный исследовательский центр Уральского отделения РАН, 426000, г. Ижевск, ул. Т. Барамзиной, 34 2 Удмуртский государственный университет, 426034, г. Ижевск, ул.…”