An Analytical Model of SiGe Heterojunction Bipolar Transistors on SOI Substrate for Large Current Situations

Abstract

The large current effect of silicon germanium heterojunction bipolar transistors fabricated on thin silicon-oninsulator is included in the model. As the current is two-dimensional, the injection for large current is vertical plus horizontal and is quite different from that of the bulk device. Critical parameters modeling the large current, such as the collector injection width, the hole density and the corresponding potential in the injection region, are discussed, and the influence to the transit time is also analyzed.

Damage effects and mechanism of the silicon NPN monolithic composite transistor induced by high-power microwaves

“…The influence of HPM on modern semiconductor devices and circuit systems has received increasing attention. [2][3][4][5][6][7][8][9][10][11][12] A simulation of a bipolar junction transistor (BJT) with the high electromagnetic pulses injection from the collector was simulated by utilizing the finite difference time domain method in two dimensions, the results indicated that the damage spot lay between the emitter and the collector where the avalanche breakdown occurs. [13] The transient response characteristics were simulated using the improver two-dimensional semiconductor device simulation program in order to obtain the damage effect of the BJT under the injection of electromagnetic pulse, which showed that the peak temperature appears on the edge of the emitter.…”