2021
DOI: 10.1002/cta.3012
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An analytical gm/ID‐based harmonic distortion prediction method for multistage operational amplifiers

Abstract: SummaryAn analytical stage‐based harmonic distortion (HD) analysis method for multistage operational amplifiers (Op Amps) is developed in this work. This work contributes two fundamental methods that make the analytical HD prediction possible at the circuit level. Firstly, we propose that the traditionally used first order small‐signal transistor quantities gm (transconductance) and go (output conductance) in the gm/ID design methodology for bulk complementary metal‐oxide‐semiconductor (CMOS) technology can be… Show more

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Cited by 6 publications
(3 citation statements)
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“…All the previous methods require complex computations and large memory consumption, where many first, second and third derivatives will be required to be stored or computed. An equation-based nonlinearity calculation technique based on gm/ID was discussed in [16,17], but it suffers from limited accuracy due to the approximations made in the derivations.…”
Section: Non-linearity Calculationmentioning
confidence: 99%
“…All the previous methods require complex computations and large memory consumption, where many first, second and third derivatives will be required to be stored or computed. An equation-based nonlinearity calculation technique based on gm/ID was discussed in [16,17], but it suffers from limited accuracy due to the approximations made in the derivations.…”
Section: Non-linearity Calculationmentioning
confidence: 99%
“…Therefore, when a higher gain is required, several operational amplifiers are generally cascaded to form a high-gain operational amplifier to meet the multiple gain requirements. Since the electrode signal amplifying circuit inside the XCP sensor is actually composed of a three-stage amplifying circuit, noise is inevitably introduced [32,33]. In order to study the noise effect introduced by the amplifier circuit, the noise effect can be converted into a noise voltage.…”
Section: Interference Analysis Of Internal Electromagnetic Field Sourcesmentioning
confidence: 99%
“…However, more sophisticated approaches based on semiconductor converter models have also been extensively used [19]. The complexity of mathematical models leads to the limited use of analytical methods [20,21] and more extended use of simulation modeling, which makes it possible to obtain numerical solutions for the tasks [22,23]. In addition, it is often necessary to carry out rough estimates of network operation modes with nonlinear loads while maintaining sufficient accuracy for engineering practice.…”
Section: Introductionmentioning
confidence: 99%