An analytical approximation for the excess noise factor of avalanche photodiodes with dead space

Hayat, Majeed M.; Chen, Z.; Karim, Mohammad A.

doi:10.1109/55.772371

Cited by 19 publications

(22 citation statements)

References 13 publications

Supporting

Mentioning

Contrasting

Order By: Relevance

“…This suggests that the gain variance is small, hence it begins almost deterministic. This can be explained by looking at the excess noise factor when the dead space is not negligible anymore 28 . The dead space is indeed defined as d ¼ E i /qF, where E i is the ionization threshold energy, q the elementary charge and F the electric field strength.…”

Section: Resultsmentioning

confidence: 99%

Germanium avalanche receiver for low power interconnects

et al. 2014

View full text Add to dashboard Cite

Recent advances in silicon photonics have aided the development of on-chip communications. Power consumption, however, remains an issue in almost all integrated devices. Here, we report a 10 Gbit per second waveguide avalanche germanium photodiode under low reverse bias. The avalanche photodiode scheme requires only simple technological steps that are fully compatible with complementary metal oxide semiconductor processes and do not need nanometre accuracy and/or complex epitaxial growth schemes. An intrinsic gain higher than 20 was demonstrated under a bias voltage as low as À 7 V. The Q-factor relating to the signal-to-noise ratio at 10 Gbit per second was maintained over 20 dB without the use of a trans-impedance amplifier for an input optical power lower than À 26 dBm thanks to an aggressive shrinkage of the germanium multiplication region. A maximum gain over 140 was also obtained for optical powers below À 35 dBm. These results pave the way for low-powerconsumption on-chip communication applications.

show abstract

Section: Resultsmentioning

confidence: 99%

Germanium avalanche receiver for low power interconnects

et al. 2014

View full text Add to dashboard Cite

show abstract

“…For reducing the excess noise that arises from the avalanche process, the multiplication region width should be shortened [2][3][4][5][6]. There has been a widespread research effort in the modeling of avalanche photodiodes (APDs) with a thin multiplication layer, which includes the effect of dead space [4][5][6][7][8][9][10][11][12][13][14][15]. However, only a few works have attempted to introduce closed formula models considering the effects of dead space for the calculation of the characteristics of APDs [7,8,12,13].…”

Section: Introductionmentioning

confidence: 99%

“…There has been a widespread research effort in the modeling of avalanche photodiodes (APDs) with a thin multiplication layer, which includes the effect of dead space [4][5][6][7][8][9][10][11][12][13][14][15]. However, only a few works have attempted to introduce closed formula models considering the effects of dead space for the calculation of the characteristics of APDs [7,8,12,13]. Based on a firstorder expansion of the recursive equations reported in [11], Spinelli et al [8] derived an approximate analytical expression for the mean gain by using a small-perturbation approach.…”

Section: Introductionmentioning

confidence: 99%

“…However, this model does not address the excess noise and breakdown voltage of APDs. In 1999, Hayat et al [12] obtained an approximate analytical expression for the mean gain and excess noise factor by using a characteristicequation approach to the first-and second-order recurrence equations reported in [11], where they assumed constant ionization coefficients conditions. Saleh et al [13] used the dead space multiplication theory [14,15], to introduce the analytical expression for the breakdown voltage and determined numerically the breakdown voltage as a function of multiplication region width.…”

Section: Introductionmentioning

confidence: 99%

“…Saleh et al [13] used the dead space multiplication theory [14,15], to introduce the analytical expression for the breakdown voltage and determined numerically the breakdown voltage as a function of multiplication region width. However, these models [12,13] do not explain the hole-initiated characteristics of APDs explicitly. In 2002, by considering the effect of carrier velocity, Banoushi et al [16] obtained a closed formula for calculation of the mean gain and breakdown voltage.…”

Section: Introductionmentioning

confidence: 99%

See 2 more Smart Citations

A closed-form analytic model to study the characteristics of avalanche photodiodes

Masudy‐Panah

Ahmadi

2009

Journal of Modern Optics

View full text Add to dashboard Cite

In this paper, we introduce for the first time an approximate analytical model that leads to a closed formula to calculate gain, breakdown voltage and excess noise factor of homojunction avalanche photodiodes (APDs) by considering the approximation for dead space. Comparison of our results with experimental data demonstrates that there is an excellent agreement between the results of our calculation and the existing experimental results.

show abstract

Scintillation detectors and photodetectors

Ahmed

2015

Physics and Engineering of Radiation Detection

View full text Add to dashboard Cite

An analytical approximation for the excess noise factor of avalanche photodiodes with dead space

Cited by 19 publications

References 13 publications

Germanium avalanche receiver for low power interconnects

Germanium avalanche receiver for low power interconnects

A closed-form analytic model to study the characteristics of avalanche photodiodes

Scintillation detectors and photodetectors

Contact Info

Product

Resources

About