An Analytic Model for Predicting Single Event (SE) Crosstalk of Nanometer CMOS Circuits

Liu, Baojun; Cai, Li; Liu, Xiaoqiang

doi:10.1007/s10836-020-05891-4

Cited by 2 publications

(5 citation statements)

References 19 publications

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“…The equivalent SEC circuit model for three line coupled SWCNT bundle interconnects onto the output node, and R s is the effective resistance of the pull-up path or pull-down path. 8,10,26 In practice, due to different equivalent resistance and capacitance values for linear and saturation regions of operation of MOS transistors, nonlinear CMOS driver gate, appropriation modeled as resistive and capacitive elements, gives rises to an inaccurate output. [27][28][29] This can be understood by noting that during the transition time the transistor operates in both the linear and saturation regions.…”

Section: Temperature-dependent Circuit For Secmentioning

confidence: 99%

“…For Cu, the other parameters, including inductances and capacitance, are independent on the temperature, and can be calculated by Liu et al 8…”

Section: Temperature-dependent Circuit For Secmentioning

confidence: 99%

“…[1][2][3][4][5][6][7] Advances in modern electrical technology scaling down cause decreasing space and increasing thickness to width ratio of interconnects, which contribute to increase the crosstalk effect among the lines. [8][9][10][11][12] As device feature size reduces to nanometer scale, single event transient (SET), which is induced by an energetic radiation particle striking the sensitive area of a device or circuit, might impact electronically unrelated multiple logic paths due to the crosstalk effect. This has become a major threaten for the reliability of modern integrated circuits.…”

Section: Introductionsmentioning

confidence: 99%

“…For high-reliability applications such as avionics, medical systems, and so forth, the impact of SET must be considered in the analysis of the crosstalk effects of integrated circuits. 8,9 Due to various thermal variations on the chip or environment, the line systems might experience different temperatures. Therefore, if the influence of the thermal effects on single event crosstalk (SEC) noise is not properly considered, the same deposited charge may induce more glitch on the victim line.…”

Section: Introductionsmentioning

confidence: 99%

“…Some works for SEC in copper interconnects have been performed. [8][9][10] However, till date, no study has been made to discuss the thermally crosstalk of SWCNT interconnects with single event transient.…”

Section: Introductionsmentioning

confidence: 99%

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Effect of temperature and single event transient on crosstalk in coupled single‐walled carbon nanotube (SWCNT) bundle interconnects

Liu

Li²,

et al. 2021

Circuit Theory & Apps

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Although they have better electrical and thermal properties, thermal issues have become an important challenge to design modern integrated circuits with single-walled carbon nanotube (SWCNT) bundle interconnects. The equivalent RLC model for SWCNT bundle interconnect is analyzed. Based on the proposed circuit for single event crosstalk (SEC), the influences of the length of line, nanotube diameter, metallic nanotube ratio, and technology node on SEC at different temperatures are studied. The potential impact mechanisms are also discussed. The simulation results show that, compared with one in copper line, peak voltage and pulse width of SEC in SWCNT interconnect are reduced by an average of 23.7% and 8.8%, respectively. The larger the diameter of SWCNT is or the more the ratio of metallic SWCNT is, the weaker the effect of SEC will be. With the increase of the length of line, the crosstalk effect will increase. The pulse width of SEC is more sensitive to the temperature when the length of line is longer. However, the peak voltage is more sensitive to the temperature when the length of line is shorter. As the technology node shrinks from 21 nm to 9.5 nm, the noise area of SEC increases from 0.55 V•ns to 1.89 V•ns, which results in that the crosstalk action time increases significantly.

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