An analytic model for asymmetric trapezoidal-gate MOSFET

Abstract

A b s t r a c t The innovative Asymmetric trapezoidal gate(ATG) structure has a relatively narrow drain-side width as compared to the source-side width, giving the trapezoidal shape of ATG MOSFETs. In this paper, an analytic model including the DC drain current and AC dynamic capacitance will be demonstrated. T h e DC Linear/saturation drain current has been derived by PoisSion's equation, with Green's function method. The subthreshold current will be also induced by Poisson's equation, with the polynomial function as bur main strategy. On the AC dynamic capacitpnce, we follow Ward and Dutton's channel charge scheme 40 partition Q o and Qs, thus all the capacitance can be obtained. Above all, in comparisons with the simulation results, our model are in good agreement with the measurement data. Besides, our model provide an effective and economic way to describe the characteristics of the ATG devices.