An analysis on applicability of Ti-doped ZnO films as the channel layer of TFTs

Quenching of visible photoluminescence and observation of two photon absorption-induced photoluminescence in pulsed laser deposited Zn1−x Ti x O (0.000 ⩽ x ⩽ 0.050) thin films

“…ZnO-TiO 2 nanocomposite can serve as an excellent candidate for nonlinear optical applications since the exciton oscillator strength of the composite is enhanced as compared to that of pure ZnO [19]. Recent work on Ti-doped ZnO has shown its technological importance in various fields such as TCEs [20], photocatalytic activity [21], photoconductivity and optoelectronics [22,23], etc. The large difference in the ionization states of Zn (Zn 2+ ) and Ti (Ti 4+ ) in the ZnO and TiO 2 respectively, causes excessive free electrons in the ZnO-TiO 2 system, controlling the band gap energy, conductivity, etc [13].…”

Titanium doped Zinc-oxide based Thin Film Transistors: Optimization of the source/drain materials

“…However, both Indium element and Gallium element are toxicant and rare element in the earth, which is not only very expensive but also harmful to our body. In this experiment, we choose Titanium-doped Zinc Oxide as the active layer, as Titanium dopants in Zinc-Oxide are able to suppress the generation of free carriers and obtain an optimal carrier concentration, thus optimizing the electrical performances of the TFTs [7][8][9]. Besides, both Titanium element and Zinc element are non-toxic, cheap and abundant in the earth.…”