An analysis of the spatial homogeneity of a photodetector surface in an infrared image converter using the fractal dimension

Salamov, B. G.; Kurt, Erol

doi:10.1080/13682199.2003.11784425

Cited by 1 publication

(1 citation statement)

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“…Meanwhile, one can not find a quantitative PID analysis of a thin film as function of time using a fractal analysis process. In our earlier studies, we have purposed a nondestructive method followed by a fractal dimension analysis to measure the DLE homogeneity and the resistivity of a GaAs semiconductor plate [27][28][29]. One purpose of the present paper is to apply our method to a series of time-dependent spatial distributed DLE intensities of a thin film to draw a picture of the surface damage and to determine the quality of the CuInSe 2 as function of time.…”

Section: Introductionmentioning

confidence: 99%

Identification of the dynamics of plasma-induced damage in a CuInSe2 thin film by fractal processing

Kurt¹,

Salamov

2006

Cryst. Res. Technol.

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A planar ionization system for rapid visualization and recording the resistance inhomogeneity and photoconductivity distribution in a chalcopyrite-type semiconductor (CuInSe 2 ) copper-indium-diselenide film is studied. A part of the discharge energy is transferred to the electrodes of the system by the bombardment of the electrode surface due to an electron-ion flow. This process leads to the sputtering mechanism of the electrode surface material. It is shown that the plasma-induced damage (PID) in a CuInSe 2 thin film was primarily due to the effectiveness of sputtering and physico-chemical interactions in the discharge gap during the transition from Townsend to the glow type. At the same time a nondestructive method is suggested for the analysis of the dynamics of PID in the CuInSe 2 thin film by fractal processing in the planar ionization system. Some properties of the device have been evaluated, such as a relative change of the resistance inhomogeneity is determined by a relative change of discharge light emission (DLE) intensity when a current is passed through an ionization cell. For the quantitative analysis of the change in the dynamic feature of PID of CuInSe 2 thin films, fractal dimension analysis was used following the records of the DLE intensity. The quality of the film was analyzed using both the profile and spatial distributed DLE intensities data showing the surface inhomogeneity and damage in the thin film as function of time. Thus, by using fractal concept, the order of the surface damage and the quality of the CuInSe 2 as function of time can be assessed exactly and the size and location of the surface inhomogeneities in thin film to be ascertained.

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Section: Introductionmentioning

confidence: 99%