An analysis of temperature dependent photoluminescence line shapes in InGaN

Teo, K. L.; Colton, John; Yu, Peter Y.; Weber, E. R.; Li, M. F.; Liu, W.; Uchida, K.; Tokunaga, Hitoo; Akutsu, Nakao; Matsumoto, Koh

doi:10.1063/1.122249

Cited by 109 publications

(48 citation statements)

References 19 publications

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“…33,36,37 The degradation of PL efficiency at low N concentration in III-V semiconductor materials has been reported by several research groups. 12,42,43 Buyanova et al, for example, 43 observed similar nonradiative recombination channels, with activation energy of 50 meV, in the GaAsN/GaAs system.…”

Section: Resultsmentioning

confidence: 99%

“…This result agrees qualitatively with recently published studies; where no correlation was established between the thermal activation energy of nonradiative traps and the band-gap difference of QW and barrier materials. 33,[35][36][37] In this case, two hypotheses are considered to explain the quenching mechanism of the PL intensity for TϾ80 K: ͑i͒ the quenching is related to the escape of only one type of carrier ͑electrons or holes͒ from the QW to the barrier 31,33 and ͑ii͒ the quenching is related to the presence of defect states in the semiconductor structure. 33,36,37 In the first hypothesis, the activation energy, E a , would be given by the band offsets in the conduction or valence band.…”

Section: Resultsmentioning

confidence: 99%

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Effect of temperature on the optical properties of GaAsSbN/GaAs single quantum wells grown by molecular-beam epitaxy

Lourenço

Dias

Poças

et al. 2003

Journal of Applied Physics

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GaAsSbN/GaAs strained-layer single quantum wells grown on a GaAs substrate by molecular-beam epitaxy with different N concentrations were studied using the photoluminescence ͑PL͒ technique in the temperature range from 9 to 296 K. A strong redshift in optical transition energies induced by a small increase in N concentration has been observed in the PL spectra. This effect can be explained by the interaction between a narrow resonant band formed by the N-localized states and the conduction band of the host semiconductor. Excitonic transitions in the quantum wells show a successive red/blue/redshift with increasing temperature in the 2-100 K range. The activation energies of nonradiative channels responsible for a strong thermal quenching are deduced from an Arrhenius plot of the integrated PL intensity.

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Section: Resultsmentioning

confidence: 99%

Section: Resultsmentioning

confidence: 99%

Effect of temperature on the optical properties of GaAsSbN/GaAs single quantum wells grown by molecular-beam epitaxy

Lourenço

Dias

Poças

et al. 2003

Journal of Applied Physics

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“…Previous studies showed that the localization effects arising from spatially inhomogeneous indium distribution played an important role for the spontaneous emission from InGaN/GaN quantum-well structures. [3][4][5][6][7][8][9][10] In particular, the localized exitons in the In-rich region acting as quantum dots were suggested to be responsible for the highefficiency radiative recombination. [8][9][10] However, the involvement of the localized states in the processes of carrier capture and recombination in InGaN/GaN LEDs with a multiple-quantum-well (MQW) active ( mesas with an area of 300 ϫ 300 m 2 , using an inductively coupled, plasma-etching system.…”

Section: Introductionmentioning

confidence: 99%

“…[1][2][3][4][5][6][7][8][9][10][11][12][13][14] In contrast to optical emitters based on conventional III-V semiconductors, InGaN-based light-emitting diodes (LEDs) show very high emission efficiency despite the existence of a high density of microstructural defects. 2 Understanding the origins of the high quantum efficiency of the LEDs is of high interest, not only from the viewpoint of material physics, but also in optimizing practical device design and growth.…”

Section: Introductionmentioning

confidence: 99%

Temperature-dependent electroluminescence in InGaN/GaN multiple-quantum-well light-emitting diodes

Cao

LeBoeuf

Rowland

et al. 2003

Journal of Elec Materi

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We present a comparative study on temperature dependence of electroluminescence (EL) of InGaN/GaN multiple-quantum-well (MQW) light-emitting diodes (LEDs) with identical structure but different indium contents in the active region. For the ultraviolet (UV) and blue LEDs, the EL intensity decreases dramatically with decreasing temperature after reaching a maximum at 150 K. The peak energy exhibits a large redshift in the range of 20-50 meV with a decrease of temperature from 200 K to 70 K, accompanying the appearance of longitudinal-optical (LO) phonon replicas broadening the low energy side of the EL spectra. This redshift is explained by carrier relaxation into lower energy states, leading to dominant radiative recombination at localized states. In contrast, the peak energy of the green LED exhibits a minimal temperatureinduced shift, and the emission intensity increases monotonically with decreasing temperature down to 5 K. We attribute the different temperature dependences of the EL to different degrees of the localization effects in the MQW regions of the LEDs. region is not yet well understood. In this work, we compare the current-and temperature-dependent electroluminescence (EL) of UV, blue, and green InGaN/GaN MQW LEDs over a wide temperature range. It appears that the behavior of the lowtemperature EL is a strong function of In mole fraction in the active region. This enables us to identify the role of localization effects in carrier capture and radiative recombination in the InGaN/GaN MQWs. EXPERIMENTALThe LED samples were grown on (0001) sapphire substrates using metal-organic chemical-vapor deposition. The device structures were identical. They consisted of a low-temperature GaN buffer layer, a 2.5-m Si-doped n-GaN layer (n ϳ 5 ϫ 10 18 cm Ϫ3 ), a 10-period, undoped-InGaN/GaN MQW layer, a 0.1-m p-type AlGaN cladding layer, and a 0.3-m p-GaN contact layer (Mg concentration ϳ1 ϫ 10 19 cm Ϫ3 ). The nominal indium-mole fractions in the MQW layers were 0.04, 0.20, and 0.35 for the UV, blue, and green LEDs, respectively. A standard technology for GaN-based LED fabrication was used, i.e., the p-GaN was partially etched to form

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“…Nevertheless, at low temperatures, energy dependent radiative decay times for InGaN/GaN QWs are quoted [15][16][17][18] to be $10 s of nanoseconds compared with exciton decay times in GaAs/AlGaAs QWs $100 s of picoseconds. 19 It is widely accepted 18,[20][21][22][23][24] that the carrier localisation can, to a large extent, overcome non-radiative recombination associated with defects. However, the role of carrier localisation 25,26 in the process responsible for efficiency reduction at high carrier densities, the so-called efficiency droop, 27,28 is still the subject of extensive discussion.…”

Section: à2mentioning

confidence: 99%

The nature of carrier localisation in polar and nonpolar InGaN/GaN quantum wells

Dawson

Schulz²,

Oliver

et al. 2016

Journal of Applied Physics

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In this paper, we compare and contrast the experimental data and the theoretical predictions of the low temperature optical properties of polar and nonpolar InGaN/GaN quantum well structures. In both types of structure, the optical properties at low temperatures are governed by the effects of carrier localisation. In polar structures, the effect of the in-built electric field leads to electrons being mainly localised at well width fluctuations, whereas holes are localised at regions within the quantum wells, where the random In distribution leads to local minima in potential energy. This leads to a system of independently localised electrons and holes. In nonpolar quantum wells, the nature of the hole localisation is essentially the same as the polar case but the electrons are now coulombically bound to the holes forming localised excitons. These localisation mechanisms are compatible with the large photoluminescence linewidths of the polar and nonpolar quantum wells as well as the different time scales and form of the radiative recombination decay curves.

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An analysis of temperature dependent photoluminescence line shapes in InGaN

Cited by 109 publications

References 19 publications

Effect of temperature on the optical properties of GaAsSbN/GaAs single quantum wells grown by molecular-beam epitaxy

Effect of temperature on the optical properties of GaAsSbN/GaAs single quantum wells grown by molecular-beam epitaxy

Temperature-dependent electroluminescence in InGaN/GaN multiple-quantum-well light-emitting diodes

The nature of carrier localisation in polar and nonpolar InGaN/GaN quantum wells

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