An analysis for S-shaped I-V characteristics of organic solar cells using lumped-parameter equivalent circuit model

Yu, Fangyong; Huang, Gongyi; Lin, Wei; Xu, Chuanlong

doi:10.1016/j.solener.2018.11.011

Cited by 13 publications

(1 citation statement)

References 22 publications

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“…The FF decreases in the cases of those SHJ cells with high carbon-content a-SiC2 and a-SiC3. The series resistance of the SHJ cells can be extracted from the J-V curves by several methods [30][31][32]. Chang et al [33] reported a simple solar cell parameter extraction method from a single J-V curve.…”

Section: Resultsmentioning

confidence: 99%

Silicon Heterojunction Solar Cells with p-Type Silicon Carbon Window Layer

et al. 2019

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Boron-doped hydrogenated amorphous silicon carbide (a-SiC:H) thin films are deposited using high frequency 27.12 MHz plasma enhanced chemical vapor deposition system as a window layer of silicon heterojunction (SHJ) solar cells. The CH4 gas flow rate is varied to deposit various a-SiC:H films, and the optical and electrical properties are investigated. The experimental results show that at the CH4 flow rate of 40 sccm the a-SiC:H has a high band gap of 2.1 eV and reduced absorption coefficients in the whole wavelength region, but the electrical conductivity deteriorates. The technology computer aided design simulation for SHJ devices reveal the band discontinuity at i/p interface when the a-SiC:H films are used. For fabricated SHJ solar cell performance, the highest conversion efficiency of 22.14%, which is 0.33% abs higher than that of conventional hydrogenated amorphous silicon window layer, can be obtained when the intermediate band gap (2 eV) a-SiC:H window layer is used.

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