An amorphous silicon triode rectifier switching device for active-matrix liquid-crystal display

In this paper, NH 3 plasma directly applied to the surface of poly-Si channel is studied for the development of high-performance low-temperature polycrystalline-silicon thinfilm transistors (LTPS-TFTs) with HfO 2 high-κ gate dielectric. The reduction of threshold voltage from 1.52 to 0.62 V, the decrease of subthreshold swing from 227 to 151 mV/decade, and the enhancement of field effect mobility μ FE from 31 to 65 cm 2 /V s are observed after NH 3 plasma surface treatment. It can be attributed to the NH 3 plasma surface treatment enabling defect passivation and plasma-induced interfacial layer (PIL) growth. To decouple the impacts of defect passivation and PIL growth, the device without PIL is also fabricated. This paper demonstrates the important impacts of NH 3 plasma surface treatment on the improvement of electrical characteristics of LTPS-TFTs.Index Terms-Interfacial layer, low-temperature polycrystalline-silicon thin-film transistors (LTPS-TFTs), NH 3 , plasma passivation.

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An amorphous silicon triode rectifier switching device for active-matrix liquid-crystal display

Cited by 3 publications

References 5 publications

Properties of nano-crystalline silicon thin film fabricated by electron beam exposure

Properties of nano-crystalline silicon thin film fabricated by electron beam exposure

Crystallization of amorphous silicon films via electron beam exposure

Threshold Voltage Reduction and Mobility Improvement of LTPS-TFTs With NH<sub>3</sub> Plasma Treatment

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