An Alternative Method to Grow Ge Thin Films on Si by Electrochemical Deposition for Photonic Applications

Jawad, M. J.; Hashim, M.R.; Ali, N. K.; Córcoles, Emma P.; Sharifabad, Maneea Eizadi

doi:10.1149/2.090202jes

Cited by 15 publications

(15 citation statements)

References 33 publications

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“…The mechanism of the electrodeposition of Ge in HF is described in a previous work. 17 In this methodology, the production of heaxafluorogermanate ions resulted from oxidation state IV to II followed by reduction process to germanium metal; Ge (0) deposited on the surface of the silicon (cathode). 17 Fig .…”

Section: Resultsmentioning

confidence: 99%

“…17 In this methodology, the production of heaxafluorogermanate ions resulted from oxidation state IV to II followed by reduction process to germanium metal; Ge (0) deposited on the surface of the silicon (cathode). 17 Fig . 1 shows the SEM images and EDX spectra of Ge electrochemically deposited samples on Si at different current densities.…”

Section: Resultsmentioning

confidence: 99%

“…More information about the technique can be found elsewhere. 17 The structural properties of the samples were investigated using JOEL JSM-6460LV scanning electron microscope (SEM). Optical properties were conducted using Jobin Yvon HR800UV system with a Helium-Cadmium 325 nm laser for photoluminescence (PL) attached to a Raman spectrometer with an argon ion (Ar + ) 514 nm laser.…”

Section: Methodsmentioning

confidence: 99%

“…There are cost-effective chemical-solution techniques available for the preparation of freestanding colloid z E-mail: vijay.arora@wilkes.edu nanocrystals. 16 Electrochemical deposition of Ge on Si is an inexpensive and fast synthesis method to produce good quality semiconductor thin films and nanostructures 17 for exploration with PL.…”

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Photoluminescence of Ultraviolet Initiated Green Emission from Electrochemically Deposited Germanium Films on (100) Silicon

Jawad

Hashim

Ali

et al. 2014

J. Electrochem. Soc.

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Photoluminescence (PL) spectra of the germanium deposited nanostructures grown on silicon (Si) substrate showed a weak UV peaked at 353 nm (∼3.4 eV), violet-blue at 402 nm (∼3.1 eV), and a broad green band emission in the 470-500 nm (∼2.46 eV) range at room temperature when illuminated by 325 nm line laser beam. Electrochemical growth was monitored and evaluated using scanning electron microscopy (SEM), Raman spectroscopy, and PL. SEM images indicated varied current-density-dependent stoichiometry. The origin of the emissions is attributable to GeO 2 defect centers, exciton confined in a quantum well, and to unbridged oxygen hole centers. These results perhaps are an indication that the blue luminescence is correlated with the formation of Ge (or GeO 2 ) nanocrystals. The radiative recombinations of excitons confined in the nanocrystals are assessed with a possibility of contributing to the shift in the peak.

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Section: Resultsmentioning

confidence: 99%

Section: Resultsmentioning

confidence: 99%

Section: Methodsmentioning

confidence: 99%

mentioning

confidence: 99%

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Photoluminescence of Ultraviolet Initiated Green Emission from Electrochemically Deposited Germanium Films on (100) Silicon

Jawad

Hashim

Ali

et al. 2014

J. Electrochem. Soc.

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“…36,[41][42][43][44][45][46] Ge electroplating has also been reported on semiconducting substrates such as Si. 47 There are some reports on the formation of thick Ge nanostructures, [48][49][50] which showed that, depending on potential, Ge nanostructures can be grown from aqueous solution by dissolution into and saturation of a liquid Hg electrode.…”

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confidence: 99%

Electrochemical Formation of Germanene: pH 4.5

Ledina

Bui

Liang

et al. 2017

J. Electrochem. Soc.

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Germanene is a single layer allotrope of Ge, with a honeycomb structure similar to graphene. This report concerns the electrochemical formation of germanene in a pH 4.5 solution. The studies were performed using in situ Electrochemical Scanning Tunneling Microscopy (EC-STM), voltammetry, coulometry, surface X-ray diffraction (SXRD) and Raman spectroscopy to study germanene electrodeposition on Au(111) terraces. The deposition of Ge is kinetically slow and stops after 2–3 monolayers. EC-STM revealed a honeycomb (HC) structure with a rhombic unit cell, 0.44 ± 0.02 nm on a side, very close to that predicted for germanene in the literature. Ideally the HC structure is a continuous sheet, with six Ge atoms around each hole. However, only small domains, surrounded by defects, of this structure were observed in this study. The small coherence length and multiple rotations domains made direct observation with surface X-ray diffraction difficult. Raman spectroscopy was used to investigate the multi-layer Ge deposits. A peak near 290 cm−1, predicted to correspond to germanene, was observed on one particular area of the sample, while the rest resembled amorphous germanium. Electrochemical studies of germanene showed limited stability when exposed to oxygen.

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Effects of gold‐induced crystallization process on the structural and electrical properties of germanium thin films

Kabaçelik

Kulakçı

Turan

et al. 2018

Surface & Interface Analysis

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Gold-induced (Au-) crystallization of amorphous germanium (α-Ge) thin films was investigated by depositing Ge on aluminum-doped zinc oxide and glass substrates through electron beam evaporation at room temperature. The influence of the postannealing temperatures on the structural properties of the Ge thin films was investigated by employing Raman spectra, X-ray diffraction, and scanning electron microscopy. The Raman and X-ray diffraction results indicated that the Au-induced crystallization of the Ge films yielded crystallization at temperature as low as 300°Cfor 1 hour. The amount of crystallization fraction and the film quality were improved with increasing the postannealing temperatures. The scanning electron microscopy images show that Au clusters are found on the front surface of the Ge films after the films were annealed at 500°C for 1 hour. This suggests that Au atoms move toward the surface of Ge film during annealing. The effects of annealing temperatures on the electrical conductivity of Ge films were investigated through current-voltage measurements. The room temperature conductivity was estimated as 0.54 and 0.73 Scm −1 for annealed samples grown on aluminum-doped zinc oxide and glass substrates, respectively. These findings could be very useful to realize inexpensive Ge-based electronic and photovoltaic applications.

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An Alternative Method to Grow Ge Thin Films on Si by Electrochemical Deposition for Photonic Applications

Cited by 15 publications

References 33 publications

Photoluminescence of Ultraviolet Initiated Green Emission from Electrochemically Deposited Germanium Films on (100) Silicon

Photoluminescence of Ultraviolet Initiated Green Emission from Electrochemically Deposited Germanium Films on (100) Silicon

Electrochemical Formation of Germanene: pH 4.5

Effects of gold‐induced crystallization process on the structural and electrical properties of germanium thin films

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