An All-Thin-Devices Level Shifter in Standard-Cell Format for Auto Place-and-Route Flow

Cuevas, Nestor; Ardila, Javier; Roa, Elkim

doi:10.1109/lascas.2019.8667578

Cited by 4 publications

(3 citation statements)

References 8 publications

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“…Low‐to‐high energy‐per‐transition for different V DDL values, maintaining V DDH constant 5 [Colour figure can be viewed at wileyonlinelibrary.com]…”

Section: Proposed Ls Architecturementioning

confidence: 99%

“…The integration of SGOLSs allows communication among modules without adding extra cell pins to bias higher voltage wells. Within an SoC, SGOLS reduces routing congestion and renders higher integration 5 …”

Section: Introductionmentioning

confidence: 99%

“…Simplified block diagram of a two‐voltage domain system‐on‐chip (SoC) architecture 5 [Colour figure can be viewed at wileyonlinelibrary.com]…”

Section: Introductionmentioning

confidence: 99%

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A single gate oxide level shifter for denser digital domain integration in multiple‐supply‐voltage applications

Cuevas

Gomez

Roa

2020

Circuit Theory & Apps

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Summary Modern system‐on‐chip (SoC) applications usually employ multiple voltage domains to save power consumption according to the required circuit performance. Typical multivoltage approaches use level shifters (LSs) to establish communication among voltage domains. The use of commercial standard‐cell and multiple gate oxide MOS LSs implies a nonoptimal place‐and‐route process. Here, we introduce a single gate oxide level shifter (SGOLS) that enables full integration into low‐voltage domains. We tested the proposed idea using a commercial digital‐flow tool for a two‐domain SoC integration, achieving an enhancement in the total integration area occupied by LSs of 54% regarding the conventional LS approaches. The proposed SGOLS was implemented in both 65‐ and 180‐nm CMOS nodes, handling voltage differences between the nominal and I/O domain supplies by using just single gate oxide devices. We validated the circuit performance through process, voltage, and temperature (PVT) variations for wide frequency and supply voltage ranges, disclosing an energy‐per‐transition of 416 fJ@180 nm and 93 fJ@65 nm. The introduced LS extends the integration of multiple voltage domains into denser SoCs.

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“…Low‐to‐high energy‐per‐transition for different V DDL values, maintaining V DDH constant 5 [Colour figure can be viewed at wileyonlinelibrary.com]…”

Section: Proposed Ls Architecturementioning

confidence: 99%

Section: Introductionmentioning

confidence: 99%

See 1 more Smart Citation

A single gate oxide level shifter for denser digital domain integration in multiple‐supply‐voltage applications

Cuevas

Gomez

Roa

2020

Circuit Theory & Apps

Self Cite

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P‐7: A High Resolution Design Methodology for Organic Photo Diode Sensor Integration

Kim,

Bang,

Yoo

et al. 2024

Symp Digest of Tech Papers

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In order for OPD to be integrated into the panel, high‐resolution design technology is required. The DSE makes various placements by changing the location and rotation of signal lines and devices, and makes optimal routing. We propose in order to reduce searching time and parasitic capacitance, the search priority is adjusted by high resolution predict models. In addition, a routing model is proposed to avoid congestion of routes and to search for a routing that minimizes overlapping areas between signal lines. Therefore, it is possible to find a layout that can reduce design areas by various placements and routes.

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Single Threshold TSO Level Converters for Ultra-Low Power Digital Designs

Kesharwani

Taraporewalla

Saha

2022

2022 IEEE 19th India Council International Conference (INDICON)

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An All-Thin-Devices Level Shifter in Standard-Cell Format for Auto Place-and-Route Flow

Cited by 4 publications

References 8 publications

A single gate oxide level shifter for denser digital domain integration in multiple‐supply‐voltage applications

A single gate oxide level shifter for denser digital domain integration in multiple‐supply‐voltage applications

P‐7: A High Resolution Design Methodology for Organic Photo Diode Sensor Integration

Single Threshold TSO Level Converters for Ultra-Low Power Digital Designs

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