An All-Silicon E-Band Backhaul-on-Glass Frequency Division Duplex Module with &gt;24dBm PSAT &amp; 8dB NF

Shahramian, Shahriar; Holyoak, Michael J.; Zierdt, Mike; Sayginer, Mustafa; Weiner, Joe; Singh, Amit; Baeyens, Y.

doi:10.1109/rfic54546.2022.9863150

Cited by 4 publications

(3 citation statements)

References 1 publication

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“…The amplifier's output power 1 dB compression point was measured to be higher than 16 dBm. Table 1 lists the performance comparison of the power amplifier with previously reported power amplifiers near 77 GHz [20][21][22]. It can be seen that the power amplifier has the minimum chip area when the output power reaches around 20 dBm, which is very competitive in terms of equivalent output power per unit area.…”

Section: Measurement Resultsmentioning

confidence: 98%

A 77 GHz Power Amplifier with 19.1 dBm Peak Output Power in 130 nm SiGe Process

Zhou,

Yan,

Chen

et al. 2023

Micromachines

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This article reports a two-stage differential structure power amplifier based on a 130 nm SiGe process operating at 77 GHz. By introducing a tunable capacitor for amplitude and phase balance at the center tap of the secondary coil of the traditional Marchand balun, the balun achieves amplitude imbalance less than 0.5 dB and phase imbalance less than 1 degree within the operating frequency range of 70–85 GHz, which enables the power amplifier to exhibit comparable output power over a wide operating frequency band. The power amplifier, based on a designed 3-bit digital analog convertor (DAC)-controlled base bias current source, exhibits small signal gain fluctuation of less than 5 dB and saturation output power fluctuation of less than 2 dB near the 80 GHz frequency point when the ambient temperature varies in the range of −40 °C to 125 °C. Benefiting from the aforementioned design, the tested single-path differential power amplifier exhibits a small signal gain exceeding 16 dB, a saturation output power exceeding 18 dBm, and a peak saturation output power of 19.1 dBm in the frequency band of 70–85 GHz.

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Section: Measurement Resultsmentioning

confidence: 98%

A 77 GHz Power Amplifier with 19.1 dBm Peak Output Power in 130 nm SiGe Process

Zhou,

Yan,

Chen

et al. 2023

Micromachines

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“…Some technology demonstrators have been reported that are of interest. Shahramian et al report an E-band FDD module consisting of two transceivers and two PAs [111], [112]. The design utilizes a glass interposer on which all analog, RF, and power is routed.…”

Section: Radio-on-glass Transceiversmentioning

confidence: 99%

SiGe and CMOS Technology for State-of-the-Art Millimeter-Wave Transceivers

2023

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Innovation and evolution are paramount where the demand for wideband, data-intensive connectivity is ever-increasing, and the only constant is change. Standards that define the operation of next-generation mobile networks are moving away from the traditional radio frequency (RF) spectrum and into millimeter-wave (mm-wave) bands. The physical layer (PHY) for IEEE 802.11ad Wi-Fi and 802.11ay WLANs dictates operation in the unlicensed 60 GHz band. 5G New Radio (NR) applications utilize selected bands from 26 to 39 GHz. Additionally, newly developing Fourth Industrial Revolution (4IR) applications depend on 5G NR as an enabling technology. Satellite communications and wireless backhaul will occur in E-band between 70-86 GHz. Increasing demands from the market cause designers to push boundaries, and the development of standards guide technological advances. Perhaps the most substantial improvements are observed in integrated circuit technology. This article details the major Si processes, namely Complementary Metal Oxide Semiconductor (CMOS) and SiGe Bipolar CMOS (BiCMOS), and their foray into the wireless transceiver space traditionally dominated by GaAs. CMOS and BiCMOS have become popular in many communities because of their low fabrication cost and excellent digital integration capabilities. RF performance has matured to where Si is a serious competitor for tried-and-tested III-V technologies. Some extreme environments and sophisticated applications still favor GaAs and GaN, however. GaAs, for example, can yield unparalleled output power and excellent noise figure performance, albeit at a higher cost and increased design and manufacturing complexity due to the multi-chip nature of these circuits.INDEX TERMS 5G new radio (NR), broadband communication, cellular vehicle-to-everything (C-V2X), CMOS, fourth industrial revolution (4IR), Internet of Things (IoT), millimeter-wave, SiGe BiCMOS.

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“…In recent years, Frequency Division Duplexing (FDD) systems have gained more popularity due to their higher spectrum utilization [6]. In FDD, on the other hand, the uplink and downlink channels use different frequency points.…”

Section: Introduction 1background and Motivationsmentioning

confidence: 99%

CSI Feedback Model Based on Multi-Source Characterization in FDD Systems

Pan,

Zhao,

Zhang

et al. 2023

Sensors

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In wireless communication, to fully utilize the spectrum and energy efficiency of the system, it is necessary to obtain the channel state information (CSI) of the link. However, in Frequency Division Duplexing (FDD) systems, CSI feedback wastes part of the spectrum resources. In order to save spectrum resources, the CSI needs to be compressed. However, many current deep-learning algorithms have complex structures and a large number of model parameters. When the computational and storage resources are limited, the large number of model parameters will decrease the accuracy of CSI feedback, which cannot meet the application requirements. In this paper, we propose a neural network-based CSI feedback model, Mix_Multi_TransNet, which considers both the spatial characteristics and temporal sequence of the channel, aiming to provide higher feedback accuracy while reducing the number of model parameters. Through experiments, it is found that Mix_Multi_TransNet achieves higher accuracy than the traditional CSI feedback network in both indoor and outdoor scenes. In the indoor scene, the NMSE gains of Mix_Multi_TransNet are 4.06 dB, 4.92 dB, 4.82 dB, and 6.47 dB for compression ratio η = 1/8, 1/16, 1/32, 1/64, respectively. In the outdoor scene, the NMSE gains of Mix_Multi_TransNet are 3.63 dB, 6.24 dB, 4.71 dB, 4.60 dB, and 2.93 dB for compression ratio η = 1/4, 1/8, 1/16, 1/32, 1/64, respectively.

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An All-Silicon E-Band Backhaul-on-Glass Frequency Division Duplex Module with >24dBm PSAT & 8dB NF

Cited by 4 publications

References 1 publication

A 77 GHz Power Amplifier with 19.1 dBm Peak Output Power in 130 nm SiGe Process

A 77 GHz Power Amplifier with 19.1 dBm Peak Output Power in 130 nm SiGe Process

SiGe and CMOS Technology for State-of-the-Art Millimeter-Wave Transceivers

CSI Feedback Model Based on Multi-Source Characterization in FDD Systems

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