An AlGaAs/InGaAs pseudomorphic HEMT modulator driver IC with low power dissipation for 10-Gb/s optical transmission systems

Miyashita, M.; Yoshida, N.; Kojima, Yoshiki; Kitano, Toshiaki; Higashisaka, N.; Nakagawa, Junichi; Takagi, Tadashi; Otsubo, M.

doi:10.1109/22.598441

Cited by 15 publications

(3 citation statements)

References 6 publications

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“…Consequently, the output voltage swing of the output driver stage can be higher than . An alternative solution to provide a high output voltage is to use level shifter stages, connecting between the pre-driver and the output driver [7,13,26] . Despite the buffering effect introduced by these stages, they significantly increase the power consumption of the driver circuit.…”

Section: Driver Circuit Designmentioning

confidence: 99%

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A 15 Gbps-NRZ, 30 Gbps-PAM4, 120 mA laser diode driver implemented in 0.15-µm GaAs E-mode pHEMT technology

2021

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This paper presents the design and testing of a 15 Gbps non-return-to-zero (NRZ), 30 Gbps 4-level pulse amplitude modulation (PAM4) configurable laser diode driver (LDD) implemented in 0.15-µm GaAs E-mode pHEMT technology. The driver bandwidth is enhanced by utilizing cross-coupled neutralization capacitors across the output stage. The output transmission-line back-termination, which absorbs signal reflections from the imperfectly matched load, is performed passively with on-chip 50-Ω resistors. The proposed 30 Gbps PAM4 LDD is implemented by combining two 15 Gbps-NRZ LDDs, as the high and low amplification paths, to generate PAM4 output current signal with levels of 0, 40, 80, and 120 mA when driving 25-Ω lasers. The high and low amplification paths can be used separately or simultaneously as a 15 Gbps-NRZ LDD. The measurement results show clear output eye diagrams at speeds of up to 15 and 30 Gbps for the NRZ and PAM4 drivers, respectively. At a maximum output current of 120 mA, the driver consumes 1.228 W from a single supply voltage of –5.2 V. The proposed driver shows a high current driving capability with a better output power to power dissipation ratio, which makes it suitable for driving high current distributed feedback (DFB) lasers. The chip occupies a total area of 0.7 × 1.3 mm2.

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Section: Driver Circuit Designmentioning

confidence: 99%

“…Thirdly, LDDs are power-hungry circuits, especially at high output currents. Therefore, it is highly recommended to reduce the power dissipation of driver circuits to enable the realization of an air-cooled system and simplify the chip packaging [13] .…”

Section: Introductionmentioning

confidence: 99%

A 15 Gbps-NRZ, 30 Gbps-PAM4, 120 mA laser diode driver implemented in 0.15-µm GaAs E-mode pHEMT technology

2021

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“…Current can't flow through switching transistor. The current relationship is formula (2) i R =i c (2) Fig.6. (b) illustrates the operating point transition of switching-off.…”

Section: Principles Of Capacitive Compensationmentioning

confidence: 99%

10-Gb/s external modulator module using capacitive and inductive peaking technology

Pan

Gao

2001

Fiber Optics and Optoelectronics for Network Applications

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The paper focuses on analyzing the effects and principles of the capacitance and inductance peaking technology in 10Gb/s HEMT external modulator driver module. Based on the accurate microwave monolithic integrate circuit (MMIC) inductance equivalent circuit model, the effect of inductive compensation to the gain and bandwidth of driver module is discussed. By using the technology of gate inductive peaking and drain inductive peaking, the f T of HEMT device used in driver module reduce evidently from 54GHz to 35GHz

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Semiconductor Laser and Modulator Driver Circuit Design

Gao

2010

Optoelectronic Integrated Circuit Design and Device Modeling

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An AlGaAs/InGaAs pseudomorphic HEMT modulator driver IC with low power dissipation for 10-Gb/s optical transmission systems

Cited by 15 publications

References 6 publications

A 15 Gbps-NRZ, 30 Gbps-PAM4, 120 mA laser diode driver implemented in 0.15-µm GaAs E-mode pHEMT technology

A 15 Gbps-NRZ, 30 Gbps-PAM4, 120 mA laser diode driver implemented in 0.15-µm GaAs E-mode pHEMT technology

10-Gb/s external modulator module using capacitive and inductive peaking technology

Semiconductor Laser and Modulator Driver Circuit Design

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