An AlGaAs/InGaAs pseudomorphic HEMT modulator driver IC with low power dissipation for 10 Gb/s optical transmission systems

Miyashita, M.; Shimada, M.; Yoshida, N.; Kojima, Yoshiki; Kitano, Toshiaki; Higashisaka, N.; Nakagawa, Junichi; Takagi, Tadashi; Otsubo, M.

doi:10.1109/mwsym.1996.512205

Cited by 7 publications

(4 citation statements)

References 6 publications

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“…Several HEMT driver IC's for 10 Gb/s have been reported, and the corresponding device characteristics are given [2][3][4][5]. To test the validity of our calculated method, we have compared calculated results with experimental data in Table 2.…”

Section: Resultsmentioning

confidence: 99%

Model device parameters for a 10‐Gb/s HEMT modulator driver IC

Gao

Pan

et al. 2002

Micro & Optical Tech Letters

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This paper presents research on device parameters for a 2.5–10‐Gb/s high electron mobility transistor (HEMT) modulator driver IC. The effect of DC and capacitance parameters on the driver IC is discussed, and their ability to meet the requirements of the driver IC are calculated. The results shown agree with experimental data. © 2002 Wiley Periodicals, Inc. Microwave Opt Technol Lett 35: 357–360, 2002; Published online in Wiley InterScience (www.interscience.wiley.com). DOI 10.1002/mop.10606

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Section: Resultsmentioning

confidence: 99%

Model device parameters for a 10‐Gb/s HEMT modulator driver IC

Gao

Pan

et al. 2002

Micro & Optical Tech Letters

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“…For a dc-coupled circuit matched to 50 and having an output swing of 3 V per side, the required modulation current is mA . Although it is possible to achieve this specification using a lumped output stage at 10 Gb/s [7], a simple analytical derivation indicates that this is not so at 40 Gb/s. Based on the model parameters from Table I, It should be noted that this output pole does not include the added capacitance required to implement the dc output offset control function.…”

Section: Distributed Amplifier Blockmentioning

confidence: 99%

A 3-V fully differential distributed limiting driver for 40-Gb/s optical transmission systems

McPherson¹,

Pera²,

Tazlauanu³

et al. 2003

IEEE J. Solid-State Circuits

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A fully differential 40-Gb/s electro-absorption modulator driver is presented. Based on a distributed limiting architecture, the circuit can supply up to 3.0-V pp (peak-to-peak) per side in a 50load at data rates as high as 44 Gb/s. Both the input and the output are internally matched to 50 and exhibit return loss of better than 10 dB up to 50 GHz. Additional features of the driver include the use of a single 5.2-V supply, output swing control (1.7-3.0-V pp per side), dc output offset control (0.15 V to 1.1 V), and pulsewidth control (30% to 66%). The driver architecture was optimized based on a comprehensive analytical derivation of the frequency response of cascaded source-coupled field-effect transistor logic blocks using both single and double source-follower topologies.

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“…1(b), is connected between the driver output and the output of a scaled-down replica stage, used to generate an internal estimate of the driver output voltage. Due to the external dc offset of laser diodes, a dc offset cancellation loop circuit is needed to guarantee perfect matching between the dc output voltages of the ABT and the driver [9,12] . Under normal operation, no power is wasted in , and the modulation current exactly equals the driver tail current.…”

Section: Introductionmentioning

confidence: 99%

“…[15,9], respectively. On the other hand, the CMOS process can still compete to implement such circuits using broadband techniques like inductive peaking [3, 5, 12, 16−18] and negative impedance converters [4,12,19] . These techniques improve the speed, especially when a high driving current capability is required.…”

Section: Introductionmentioning

confidence: 99%

A 15 Gbps-NRZ, 30 Gbps-PAM4, 120 mA laser diode driver implemented in 0.15-µm GaAs E-mode pHEMT technology

2021

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This paper presents the design and testing of a 15 Gbps non-return-to-zero (NRZ), 30 Gbps 4-level pulse amplitude modulation (PAM4) configurable laser diode driver (LDD) implemented in 0.15-µm GaAs E-mode pHEMT technology. The driver bandwidth is enhanced by utilizing cross-coupled neutralization capacitors across the output stage. The output transmission-line back-termination, which absorbs signal reflections from the imperfectly matched load, is performed passively with on-chip 50-Ω resistors. The proposed 30 Gbps PAM4 LDD is implemented by combining two 15 Gbps-NRZ LDDs, as the high and low amplification paths, to generate PAM4 output current signal with levels of 0, 40, 80, and 120 mA when driving 25-Ω lasers. The high and low amplification paths can be used separately or simultaneously as a 15 Gbps-NRZ LDD. The measurement results show clear output eye diagrams at speeds of up to 15 and 30 Gbps for the NRZ and PAM4 drivers, respectively. At a maximum output current of 120 mA, the driver consumes 1.228 W from a single supply voltage of –5.2 V. The proposed driver shows a high current driving capability with a better output power to power dissipation ratio, which makes it suitable for driving high current distributed feedback (DFB) lasers. The chip occupies a total area of 0.7 × 1.3 mm2.

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An AlGaAs/InGaAs pseudomorphic HEMT modulator driver IC with low power dissipation for 10 Gb/s optical transmission systems

Cited by 7 publications

References 6 publications

Model device parameters for a 10‐Gb/s HEMT modulator driver IC

Model device parameters for a 10‐Gb/s HEMT modulator driver IC

A 3-V fully differential distributed limiting driver for 40-Gb/s optical transmission systems

A 15 Gbps-NRZ, 30 Gbps-PAM4, 120 mA laser diode driver implemented in 0.15-µm GaAs E-mode pHEMT technology

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