An Advanced Full Adder Based Arithmetic Logic Unit (ALU) Using Low-Temperature Poly-Si Oxide TFTs

Ji, Hong; Geng, Di; Chuai, Xichen; Duan, Xinlv; Chen, Qian; Wu, Wanming; Chen, Chuanke; Jiang, Wenfeng; Jang, Jin; Li, Ling

doi:10.1109/ted.2022.3208074

Cited by 4 publications

(2 citation statements)

References 24 publications

Supporting

Mentioning

Contrasting

Order By: Relevance

“…What's more, AMOLED display with high resolution is preferred for mobile displays and AR/VR microdisplay products. Hybrid integration also benefits high circuit density with multiple functions within display panel [5]- [8].…”

Section: Introductionmentioning

confidence: 99%

P‐6.13: 3D Stacked Hybrid TFT Integrated Circuits for 1100 PPI AMOLED Display

Liu,

Zhu,

Chang

et al. 2024

Symp Digest of Tech Papers

View full text Add to dashboard Cite

This paper studies high‐resolution AMOLED displays pixel and driving circuits using 3D stacking LTPS and oxide hybrid TFT integration technology systematically. It is demonstrated the OLED display resolution reaches 1167 PPI when the minimum line width/line spacing is reduced to 1 μm/0.5 μm. In addition, peripheral row and column drive circuits for the high display resolution were also illustrated. Good dynamic performance of the designed driving circuits was obtained thanks to the 3D TFTs.

show abstract

Section: Introductionmentioning

confidence: 99%

P‐6.13: 3D Stacked Hybrid TFT Integrated Circuits for 1100 PPI AMOLED Display

Liu,

Zhu,

Chang

et al. 2024

Symp Digest of Tech Papers

View full text Add to dashboard Cite

show abstract

“…The LTPS-based TFT has such advantages as acceptable uniformity and good carrier mobility [10][11][12][13][14][15]. In addition, compared to other channel materials, LTPS TFT device have excellent reliability performance with relatively low fabrication cost, which makes it receive more attentions for novel applications [16][17][18][19][20][21]. Currently, the LTPS TFT device is used in smart phones, wearable and flexible devices [22][23][24][25][26].…”

mentioning

confidence: 99%

Investigating DC and AC degradation behaviors to P-type low temperature polycrystalline silicon thin film transistor with fin-like structure

Chen¹,

Zheng

Yeh

et al. 2023

J. Phys. D: Appl. Phys.

View full text Add to dashboard Cite

Currently, thin film transistor (TFT) based on planar structure is widely used in the applications of display panels. However, when the device is scaling-down, new device structures or novel materials should be introduced. In this work, the low temperature polycrystalline silicon (LTPS) TFT with fin-like structure is investigated. On the basis of electrical measurements, the device features good switching characteristics with low operating voltages. However, the Id-Vg sweeping result exhibits off-state leakage, which is known as the gate-induced drain leakage (GIDL) current. The GIDL current is increased with the drain bias and the temperature increasing. To observe the GIDL current degradations, different gate biases with negative bias stress (NBS) and positive bias stress (PBS) are applied. The results show different degradation behaviors. In addition, bias stresses with DC and AC methods are also applied to verify the device reliability. Both threshold voltage (Vt) shift and sub-threshold swing (S.S.) are also extracted to verify the degradations of the device. Finally, the physical models are also proposed to illustrate the degradation behaviors of the LTPS device with a fin-like structure, which can be beneficial to future related development of LTPS-based devices.

show abstract

Thin‐Film Transistors for Integrated Circuits: Fundamentals and Recent Progress

Yan,

Wang,

Yan

et al. 2023

Adv Funct Materials

View full text Add to dashboard Cite

High‐performance thin‐film transistors (TFTs) integrated circuits (ICs) have become increasingly necessary to meet the emerging demands such as healthcare, edge computing, and the Internet of Things, etc. This article aims to point out the potential development trends and bottlenecks of TFT ICs, enhancing their performance in terms of electronic performance, stability, consistency, CMOS design, and manufacturing capability. Basic device structures and overall metrics of TFT ICs are explored, as well as their superiority compared to silicon‐based ultrathin chips. Hydrogenated amorphous silicon, low‐temperature polycrystalline silicon, and amorphous oxide semiconductors are widely used in displays due to their ability to be deposited on large areas at low processing temperatures and low cost, and are validated in many prototypes for TFT ICs. Their conduction mechanisms, process flows, performance evaluation, and recent advances are comprehensively viewed. In addition, the potential of emerging low‐dimensional materials as next‐generation channel materials is discussed, along with their limitations and progress in this field. Finally, the major challenges in manufacturing high‐performance TFT ICs and future perspectives are summarized.

show abstract

An Advanced Full Adder Based Arithmetic Logic Unit (ALU) Using Low-Temperature Poly-Si Oxide TFTs

Cited by 4 publications

References 24 publications

P‐6.13: 3D Stacked Hybrid TFT Integrated Circuits for 1100 PPI AMOLED Display

P‐6.13: 3D Stacked Hybrid TFT Integrated Circuits for 1100 PPI AMOLED Display

Investigating DC and AC degradation behaviors to P-type low temperature polycrystalline silicon thin film transistor with fin-like structure

Thin‐Film Transistors for Integrated Circuits: Fundamentals and Recent Progress

Contact Info

Product

Resources

About