An Accurate Model for InP HEMT Small-Signal Equivalent Circuit Based on EM Simulation

Feng, Zhiyu; Cao, Shurui; Feng, Ruize; Zhou, Fugui; Su, Yongbo; Ding, Wucang; Jin, Zhi

doi:10.1109/ted.2023.3235709

Cited by 6 publications

(7 citation statements)

References 30 publications

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“…In the case of our HEMT-based Low-Noise Amplifier (LNA), it can be simplified to an intrinsic Field-Effect Transistor (FET) model using either the S parameter model or the Y parameter model. However, employing S-parameters for the extraction of equivalent circuit parameters poses challenges due to the ill-conditioned nature of the problem-there are too many unknowns and not enough equations [44]. Typically, optimizationbased techniques are applied to resolve this issue.…”

Section: Intrinsic Fet Model Creation Using Y Parametersmentioning

confidence: 99%

Composite channel 100 nm InP HEMT with ultrathin barrier for millimetre wave applications

Nandi,

Dubey,

Kumar

et al. 2024

Eng. Res. Express

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This work proposes a new 100 nm InP based InGaAs-InAs-InGaAs composite channel HEMT for millimetre wave applications. The usage of an ultra-thin 2 nm barrier layer, unique composite channel topology and III-V material selection provides superior electron confinement in the channel, enhancing 2DEG concentration and hence, mobility and speed of the proposed device. We achieve a unity current gain frequency (fT) of 248.9 GHz and a maximum oscillation frequency (fMAX) of 523.9 GHz with a current gain of 67.7 dB at 0.1 GHz. Off-state leakage current is in the nanoampere range with minimum noise figure (NFMIN) of only 0.76 dB at 10 GHz. We compare the DC and RF performance and the associated parasitics of different composite channel HEMTs proposed in latest works and mathematically justify why InGaAs-InAs-InGaAs channel HEMTs provide the highest fTand fMAX. InGaAs-InAs-InGaAs channel HEMTs provide 1.4 times better fTand fMAX with only half the NFMINof their InGaAs-InP-InGaAs channel counterparts. A frequency dependent intrinsic FET model is put forward for the proposed HEMT which allows us to model the behavior of the device under varying RF conditions and identify the effect of individual parameters on the entire system.

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Section: Intrinsic Fet Model Creation Using Y Parametersmentioning

confidence: 99%

Composite channel 100 nm InP HEMT with ultrathin barrier for millimetre wave applications

Nandi,

Dubey,

Kumar

et al. 2024

Eng. Res. Express

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“…Therefore, several alternative equivalent circuits based on the conventional small-signal model have been developed to obtain reliable fitting accuracy of RF characteristics. [2][3][4][5] Since the efficient extraction methods for the parasitic elements are important to accurate determination of the intrinsic circuit, various methods have been developed to extract the parameters of the equivalent circuit. [6][7][8][9] In this article, an improved small-signal model for GaN HEMTs devices has been developed.…”

Section: Introductionmentioning

confidence: 99%

“…The conventional 17‐element small‐signal model, which consists of 10 bias‐independent extrinsic parameters and 7 bias‐dependent intrinsic parameters, is classical but may not suit all device structures. Therefore, several alternative equivalent circuits based on the conventional small‐signal model have been developed to obtain reliable fitting accuracy of RF characteristics 2–5 . Since the efficient extraction methods for the parasitic elements are important to accurate determination of the intrinsic circuit, various methods have been developed to extract the parameters of the equivalent circuit 6–9 …”

Section: Introductionmentioning

confidence: 99%

An improved small‐signal model for GaN HEMTs devices

Bai,

Zhang,

Cheng

et al. 2024

Int J Numerical Modelling

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An improved small‐signal model applied to GaN‐based devices is presented in this article. The extrinsic elements of the equivalent circuit topology are extracted using the test structures and the cut‐off method. In order to obtain a good agreement between model simulations and measurements, distributed capacitive effects are taken into account. In addition, an inductance Lds is introduced based on the conventional intrinsic equivalent circuit topology. Good agreement between the modeled and measured S‐parameters is obtained for GaN HEMTs with a gate width of 2 × 100 μm (number of gate fingers × unit gate width) in the frequency range of 0.5–40 GHz.

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“…And the parasitic parameters are more complex, making it less applicable to extract multiple parasitic capacitances using the traditional approach. Therefore, there are two main extraction strategies are proposed, including hybrid extraction method [15,16,17,18,19] and FW-EM simulation [14,20,21,22,23,24,25,26,27]. The hybrid optimization technique determines the starting values from measurements and then uses a local optimization technique to find the optimal value of each parameter.…”

Section: Introductionmentioning

confidence: 99%

“…However, it can not achieve direct extraction of inductance using FW-EM simulation. A direct extraction method introduced by using six dummies, but it might possess a problem of overestimating the value of the gate parasitic inductance, resulting in a negative value of the source parasitic inductance due to the design of the standard Thru1 and Thru2 [25,26,27]. Furthermore, because ohmic contacts as well as metal electrodes contribute to the parasitic resistances of the source and drain, straightforward use of FW-EM simulation to explain parasitic resistances is insufficient.…”

Section: Introductionmentioning

confidence: 99%

A distributed small signal model extraction method based on FW-EM simulation for InP HEMT

Ding

Wei

Wang

et al. 2023

IEICE Electron. Express

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In this paper, a method for 0.1 𝜇m InP HEMT parameters extraction using Full-wave Electromagnetic(FW-EM) simulation is proposed. The parasitic capacitances are divided into pad and electrode capacitances to describe the distributed effects. Based on the extrinsic equivalent circuit, five standards are proposed to determine the parasitic capacitances and inductances using FW-EM simulation. Additionally, as ohmic contact resistance cannot be acquired using FW-EM simulation, parasitic resistances are determined using a Cold-Fet method without forward gate bias. Multi-bias extraction for various device sizes has been used to validate the accuracy and robustness of the suggested extraction approach, and the results indicate good agreement from 0.1 to 40 GHz.

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An Accurate Model for InP HEMT Small-Signal Equivalent Circuit Based on EM Simulation

Cited by 6 publications

References 30 publications

Composite channel 100 nm InP HEMT with ultrathin barrier for millimetre wave applications

Composite channel 100 nm InP HEMT with ultrathin barrier for millimetre wave applications

An improved small‐signal model for GaN HEMTs devices

A distributed small signal model extraction method based on FW-EM simulation for InP HEMT

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