An accurate compact model for gallium nitride gate injection transistor for next generation of power electronics design

High-temperature electrical performances of enhancement-mode (E-mode) high electron mobility transistor with ptype Gallium Nitride (GaN) gate cap are evaluated here. The physics-based mechanisms behind the behaviours are also analysed by the simulations and analytical models. For static electrical performances, the changes of GaN bandgap and the interface states or traps are considered to be influential factors for the little variations of threshold voltage (V T). Meanwhile, the on-state resistance increases and trans-conductance decreases at high temperatures due to the reduction in electron mobility (µ eff). As for blocking characteristic, high temperature-induced increase of leakage current may result from multi-reasons, such as the increase of intrinsic carrier concentration and lowering of trap barrier. In addition, a segmental method is presented to understand the gate leakage current at high temperatures. For capacitance characteristics, the increase of channel resistance makes the measured gate capacitance lower than the intrinsic value. For dynamic electrical performances, the high temperature-induced decrease of µ eff leads to the increase of plateau voltage, bringing the decreases of total switching time and total switching energy loss, which are quite different from those of the devices with traditional metal-oxide-semiconductor structures.

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“…The model of g m can be deduced from the given I‐V model of p‐GaN HEMT [14]. However, the model is suitable for ohmic gate contact.…”

Section: Resultsmentioning

confidence: 99%

High‐temperature electrical performances and physics‐based analysis of p‐GaN HEMT device

Liu

Tian

et al. 2020

IET Power Electronics

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“…The parameter s gdi is extracted from the region where the slope of the capacitance curve changes to the next occurrence of the depletion due to the field plate. The same process repeats for another C gdi term in (15). The extraction for C gd /C rss capacitance completes once the capacitance reaches its zero-bias value.…”

Section: Extraction Of Capacitance/charge Parametersmentioning

confidence: 99%

“…From the measured device capacitances, it is evident that there is a fixed capacitance between the gate and drain due to the AlGaN dielectric layer. This capacitance is characterized by the C gd0 parameter in the high bias region as described in (15). The next set of parameters that require extraction are related to C gdi as per the following equation discussed in the previous section (( 16)), repeated here for convenience.…”

Section: B Extraction Of Third-quadrant Model Parametersmentioning

confidence: 99%

“…GaN based RF HEMT devices have been commercially available much before the time GaN based power semiconductor devices became available. The operating regimes and frequency for RF GaN devices are significantly different from the power electronics domain [13]- [15]. Therefore, the modeling approach, model characterization, and parameter extraction for an RF GaN device differ significantly from the GaN devices used as power switches [16].…”

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confidence: 99%

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Compact Modeling of High-Voltage Gallium Nitride Power Semiconductor Devices for Advanced Power Electronics Design

Kotecha

Hossain

Rashid

et al. 2021

IEEE Open J. Power Electron.

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This work presents a physics-based compact GaN device model that can predict the performance characteristics of a wide range of GaN devices for power electronics applications. The model has been validated against the measured characteristics of a 650 V commercially available GaN device. The higher voltage range devices exhibit quasi-saturation on-state behavior due to drift resistance, which is evident from their on-state behavior. Also, higher voltage GaN devices have significant nonlinear capacitance characteristics due to the presence of field plates connected to the source and gate terminals. The field plates are fabricated to improve the electric-field distribution in the channel. The field plates result in significant nonlinearity in the channel capacitance that can be quantified as successive depletion in the device capacitances. The model accurately captures these phenomena in the dc and C-V device characteristics. The model also captures the third-quadrant behavior of all GaN devices with model parameters that are decoupled from the first quadrant while maintaining continuity between the first and third quadrants. Dynamic validation of the model is performed from the double-pulse test. The proposed model can be used to characterize commercially available high-voltage GaN devices that can be used in power electronic applications and design.INDEX TERMS Circuit simulations, compact modeling, device characterization, gallium nitride, power electronics, power semiconductor devices, wide bandgap semiconductors.

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“…[1][2][3][4][5] The high figures of merit of Ga 2 O 3 result in a possibility to fabricate the transistor with low on-resistance (low conduction losses), high breakdown voltage (good reliability), and high switching speeds (broad range of applications). In addition, inexpensive and high-quality Ga 2 O 3 wafers 6 are expected to lead to low-cost and high-reliability transistors, [5][6][7][8] addressing concerns related to the higher cost and lower quality of silicon carbide (SiC) and gallium nitride (GaN) wafers. The main drawbacks of Ga 2 O 3 compared to SiC and GaN are its much lower thermal conductivity and somewhat lower bulk carrier mobility.…”

mentioning

confidence: 99%

Modeling and Analysis of Gallium Oxide Vertical Transistors

Kotecha¹,

Metzger²,

Mather³

et al. 2019

ECS J. Solid State Sci. Technol.

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Gallium oxide (Ga2O3) based semiconductor devices are expected to disrupt power electronic applications in the near future. Due to the wide bandgap of Ga2O3, it should be possible to fabricate power devices with higher breakdown voltages and lower on-state resistances compared to incumbent Silicon (Si) and Silicon Carbide (SiC) technologies. In particular, vertical metal-oxide field effect transistor (MOSFETs) and vertical Fin Field Effect Transistor (FinFETs) devices based on Ga2O3 have been recently reported. Here, we present a comparative modelling study of such vertical Ga2O3 power transistors using use Technology Computer Aided Design (TCAD) and analyze their electro-thermal performance under static and dynamic operating conditions. We find that the MOSFETs show a trade-off between the current gains and threshold voltages, as a function of device geometry and acceptor concentrations in the body region. In contrast, in the FinFETs structures it is possible to achieve normally-off operation by proper design of the fin width and its donor concentration, without p-type doping. Overall, the modeling and analysis results presented here can be used as a guide for experimental improvement of the vertical Ga2O3 device performance for future power electronic applications.

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An accurate compact model for gallium nitride gate injection transistor for next generation of power electronics design

Cited by 8 publications

References 9 publications

High‐temperature electrical performances and physics‐based analysis of p‐GaN HEMT device

High‐temperature electrical performances and physics‐based analysis of p‐GaN HEMT device

Compact Modeling of High-Voltage Gallium Nitride Power Semiconductor Devices for Advanced Power Electronics Design

Modeling and Analysis of Gallium Oxide Vertical Transistors

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