An accurate characterization of interface-state by deep-level transient spectroscopy for Ge metal-insulator-semiconductor capacitors with SiO2/GeO2 bilayer passivation

Abstract

Articles you may be interested inInterface trap characterization of atomic layer deposition Al2O3/GaN metal-insulator-semiconductor capacitors using optically and thermally based deep level spectroscopies A deep-level transient spectroscopy study of silicon interface states using different silicon nitride surface passivation schemes Appl. Phys. Lett. 96, 103507 (2010); 10.1063/1.3358140 Importance of minority carrier response in accurate characterization of Ge metal-insulator-semiconductor interface traps

Acceptor defects in polycrystalline Ge layers evaluated using linear regression analysis

“…The Hall effect measurements revealed that the electrical conduction exhibited was entirely p-type owing to the acceptor defects in Ge 20 – 27 . Figure 3 a shows that p considerably depended on T d , as the behavior of p was strongly related to the density of the HAGBs (Fig.…”

“…Based on the above results, we phenomenologically discuss the origin of the acceptor defects in polycrystalline Ge. According to the previous studies, the physical origin of acceptors in Ge was speculated to be vacancies and dangling bonds 19 – 27 . The correlation between the HAGBs (Fig.…”

“…Conversely, Ge films synthesized directly on amorphous insulating substrates become polycrystalline containing various defects, including grain boundaries (GBs) 15 . From numerous theoretical and experimental studies on single-crystal Ge, it is known that defects in Ge, such as vacancies and dangling bonds, act as acceptors 19 – 27 . This is especially remarkable in polycrystalline Ge (poly-Ge) films, where the hole concentration p is typically as high as 10 17 –10 18 cm –3 28 – 34 .…”

“…One of the reasons for this is that it is difficult to control the quality of poly-Ge thin films significantly. In addition, some techniques to identify acceptor levels are difficult to apply to poly-Ge: some acceptor levels are too shallow to be evaluated in terms of temperature dependence of electrical properties 41 , and acceptor defects exceeding 10 17 cm –3 hinders forming the Schottky contacts required for the measurements including deep level transient spectroscopy 42 , which were commonly used for bulk-Ge 26 , 27 . In this study, by employing our SPC technique, the acceptor defects in poly-Ge thin films were explored, and are explained in this paper, in detail, by comparing their crystalline and electrical properties.…”

Density and Capture Cross-Section of Interface Traps in GeSnO2 and GeO2 Grown on Heteroepitaxial GeSn

“…The value of the assumed capture cross-section is unfortunately seldom stated in papers. We speculate that a capture cross-section (σ p ) of unstrained Ge is used (typically in order of ∼1 × 10 –15 to 2 × 10 –17 cm 2 ) Therefore, in this work, we use another well-established technique known as Deep Level Transient Spectroscopy (DLTS), to reliably extract the D it .…”