An AC-powered optical receiver consuming 270&amp;#x03BC;W for transcutaneous 2Mb/s data transfer

Lange, Steffen; Xu, Hongcheng; Lang, C. B.; Pless, H.; Becker, Joachim; Tiedkte, Hans-Jurgen; Hennig, Eckhard; Ortmanns, Maurits

doi:10.1109/isscc.2011.5746329

Cited by 18 publications

(6 citation statements)

References 5 publications

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“…However, lasers and LEDs that can offer such a wide bandwidth are not yet as power efficient as their RF counterparts, and they can be very sensitive to misalignments. Light scattering and absorption in the tissue are two major problems that limit the use of optical links to areas that Tx and Rx are very close or the tissue is transparent such as the cornea, lens, and vitreous humor in retinal implants [36], [37]. …”

Section: Transcutaneous Communication Methodsmentioning

confidence: 99%

An overview of the recent wideband transcutaneous wireless communication techniques

Ghovanloo

2011

2011 Annual International Conference of the IEEE Engineering in Medicine and Biology Society

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Neuroprosthetic devices such as cochlear and retinal implants need to deliver a large volume of data from external sensors into the body, while invasive brain-computer interfaces need to deliver sizeable amounts of data from the central nervous system to target devices outside of the body. Nonetheless, the skin should remain intact. This paper reviews some of the latest techniques to establish wideband wireless communication links across the skin.

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Section: Transcutaneous Communication Methodsmentioning

confidence: 99%

An overview of the recent wideband transcutaneous wireless communication techniques

Ghovanloo

2011

2011 Annual International Conference of the IEEE Engineering in Medicine and Biology Society

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“…A -cancelled technique has been proposed to mitigate the drawback of high in HV transistors. Nonetheless, it suffers increased reverse leakage current since the rectifying PMOS transistor is turned on before the induced voltage is higher than its output voltage [14], [17]. Moreover, to deliver tens of mW to the implant, a large-size rectifying transistor is needed in order to source a large current from the coil with small drain-to-source voltage drop.…”

Section: Design Considerationmentioning

confidence: 99%

An On-Chip Multi-Voltage Power Converter With Leakage Current Prevention Using 0.18 um High-Voltage CMOS Process

Chen

Gad

et al. 2016

IEEE Trans. Biomed. Circuits Syst.

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In this paper, we present an on-chip multi-voltage power converter incorporating of a quad-voltage timing-control rectifier and regulators to produce ±12 V and ±1.8 V simultaneously through inductive powering. The power converter achieves a PCE of 77.3% with the delivery of more than 100 mW to the implant. The proposed rectifier adopts a two-phase start-up scheme and mixed-voltage gate controller to avoid substrate leakage current. This current cannot be prevented by the conventional dynamic substrate biasing technique when using the high-voltage CMOS process with transistor threshold voltage higher than the turn-on voltage of parasitic diodes. High power conversion efficiency is achieved by 1) substrate leakage current prevention, 2) operating all rectifying transistors as switches with boosted gate control voltages, and 3) compensating the delayed turn-on and preventing reverse leakage current of rectifying switches with the proposed look-ahead comparator. This chip occupies an area of 970 μm × 4500 μm in a 0.18 μ m 32 V HV CMOS process. The quad-voltage timing-control rectifier alone is able to output a high DC voltage at the range of [2.5 V, 25 V]. With this power converter, both bench-top experiment and in-vivo power link test using a rat model were validated.

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“…4, which was fabricated in a 0.35 μm CMOS technology, cf. [2]. The photodiode which is centred on the chip has an active area of ∼90, 000 μm 2 .…”

Section: Downlink Designmentioning

confidence: 99%

“…The downlink is required to send programming information for the neural stimulation unit. Here, depending on the application, the required data rate is typically lower than 1 Mbps [2]. One challenge in designing the bidirectional link is the interference between the uplink and the downlink.…”

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confidence: 99%

Bidirectional optical transcutaneous telemetric link for brain machine interface

2015

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A wavelength division multiplexing-based bidirectional optical transcutaneous telemetric data link for brain machine interfaces is reported. By converting the digitised electronic signals to a stream of infrared and visible optical pulses, the optical telemetry wirelessly transmits data between the implanted neural recorder/stimulator and the external control devices. A red visible vertical cavity surface emitting laser (VCSEL) with a peak wavelength of 680 nm is used in the downlink to transmit data from the external base unit to the implant. A near infrared VCSEL with a peak wavelength of 850 nm is utilised in the uplink for data transmission from the implants to the external device. An optical filter is applied to minimise the interference between the two channels. In-vitro experiments show that the uplink is capable of transmitting data at 100 Mbps through 2 mm of porcine skin while the downlink is simultaneously working at a rate of 1 Mbps. The power consumption of the implant part of the telemetry, including the transmitter for the uplink and the receiver for the downlink are 3.2 mW and 290 μW, corresponding to a transmission power efficiencies of 32 and 290 pJ/bit, respectively, which are among the best reported and unseen for bidirectional high-speed transcutaneous communication.

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An AC-powered optical receiver consuming 270μW for transcutaneous 2Mb/s data transfer

Cited by 18 publications

References 5 publications

An overview of the recent wideband transcutaneous wireless communication techniques

An overview of the recent wideband transcutaneous wireless communication techniques

An On-Chip Multi-Voltage Power Converter With Leakage Current Prevention Using 0.18 um High-Voltage CMOS Process

Bidirectional optical transcutaneous telemetric link for brain machine interface

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