Abstract:Impurities and their complexes with intrinsic point defects, e.g vacancies, can alter the opto-electronic properties of semiconductors. Among such impurities, helium is incorporated into GaN by ion implantation, for wafer splitting and for device isolation purposes. Yet, despite the technological importance of such impurity, it is not known whether or not He is electrically active in GaN or what its impact on n- or p-type dopants is. For this reason, we carried out a density functional theory (DFT) study of su… Show more
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