An 8K4K-resolution 60fps 450ke<sup>−</sup>-saturation-signal organic-photoconductive-film global-shutter CMOS image sensor with in-pixel noise canceller

Nishimura, Kazuko; Shishido, Sanshiro; Miyake, Yuichi; Yanagida, Masaaki; Satou, Y.; Shouho, Makoto; Kanehara, Hidenari; Sakaida, R.; Sato, Yoshiaki; Hirase, J.; Tomekawa, Yuko; Abe, Yutaka; Fujinaka, Hiroshi; Matsunaga, Y.; Murakami, Masashi; Harada, Masahiko; Inoue, Yasunori

doi:10.1109/isscc.2018.8310194

Cited by 24 publications

(11 citation statements)

References 2 publications

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“…The imagers utilized panchromatic organic molecules with additional color filters or wavelength selective absorption layers. [ 3–5 ] In addition, other applications such as X‐ray imagers, health monitoring sensors, wearable electronics, etc. have been implemented using OPDs, indicative of their great potential for next generation optoelectronic devices.…”

Section: Figurementioning

confidence: 99%

Highly Responsive and Thermally Reliable Near‐Infrared Organic Photodiodes Utilizing Naphthalocyanine Molecules Tuned with Axial Ligands

Leem

Lee

et al. 2020

Advanced Optical Materials

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Achieving high‐performance near‐infrared (NIR) photodiodes is in great demand for potential applications like biometrics, security, artificial vision, biomedical imaging, etc. Herein, silicon naphthalocyanine (SiNc) small molecule‐based NIR photodiodes with narrowband absorption are presented. The optimized photodiode by varying the axial ligand in the SiNc molecules exhibits a high external quantum efficiency of 76.6% at 795 nm with narrow full width at half maximum of 80 nm, a very low dark current of 1.07 nA cm−2 at a reverse bias of −3 V, and the resultant detectivity of 5.66 × 1012 Jones. Further increase of the detectivity up to 1013 Jones is obtained by modulating the applied bias to −1 V, which is among the highest values of organic NIR detectors reported to date. The SiNc‐based photodiodes are further characterized by temporal response, linear dynamic range, etc., and shown to be stable in high humidity for over a month and in a remarkably wide temperature range (−55 to 125 °C). It is highly likely that the developed SiNc‐based photodiodes can be applicable to a wide variety of NIR sensor platforms.

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Section: Figurementioning

confidence: 99%

Highly Responsive and Thermally Reliable Near‐Infrared Organic Photodiodes Utilizing Naphthalocyanine Molecules Tuned with Axial Ligands

Leem

Lee

et al. 2020

Advanced Optical Materials

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“…[ 2 ] For example, Panasonic replaced a thick Si photoconductive layer with an organic photoconductive layer, creating additional space in devices that allowed high‐speed noise cancellation and high saturation threshold technologies to be incorporated into the image sensor without an increase in size. [ 3 ] Samsung Electronics demonstrated the concept of high‐resolution OPDs by using a green‐selective (G) OPD layer on top of blue (B) and red (R) color filters. Removing the G filter in the horizontally integrated R/G/B color filters resulted in a 1.5‐fold increase in image resolution.…”

Section: Methodsmentioning

confidence: 99%

High‐Detectivity Green‐Selective All‐Polymer p–n Junction Photodetectors

Kang

Kim

Ham

et al. 2020

Advanced Optical Materials

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a green-selective (G) OPD layer on top of blue (B) and red (R) color filters. Removing the G filter in the horizontally integrated R/G/B color filters resulted in a 1.5-fold increase in image resolution. [4] Siegmund et al. achieved narrowband near-infrared photodetectors using small-molecule p-type ZnPc and n-type C60 by tuning the resonant cavity thickness of the photoconductive layer. [5] Yoon et al. reported blue-selective OPDs using a novel polymer donor and PC 60 BM that were fabricated via a simple bulk heterojunction solution process. [6] These successful reports on the development of wavelength-selective OPDs were exclusively achieved by using a photoconductive layer composed of all small molecules, polymer donor/small molecule acceptors or single polymer; [7] polymer/polymer blends have been rarely studied for wavelength-selective OPDs. All-polymer photodetecting layers have the unique advantages of strong absorption coefficients, easy color tunability, solution processability, and especially strong mechanical properties owing to their strongly entangled nanomorphology. [8] However, their relatively disordered backbone structures compared to small molecules broaden their absorption spectra, and thus the blending of polymer donor and polymer acceptor is regarded to be a challenging issue for the realization of narrowwavelength OPDs. In this study, we suggest a new strategy for the development of p-and n-type polymers in order to achieve G-selective all-polymer OPDs while obtaining a low dark current density (J D). Both the polymer donor and acceptor were designed to have a similar G absorption wavelength. Importantly and in addition, we controlled the molar absorption coefficients of both polymers to achieve the desired wavelength selectivity in the OPDs. The absorbance of the polymer donor was maximized by increasing backbone planarity and degree of polymerization, whereas the absorbance of the polymer acceptor was minimized by breaking the π-conjugation via the inclusion of insulating alkyl chains within the conjugated polymers. The significant difference in molar absorption coefficients resulted in G selectivity in the p-n junction photoconductive layer, while the introduced alkyl chains in the main chains effectively suppressed the leakage current in OPDs. The low J D and G selectivity are highly advantageous to detect weak G light signals. Currently available wavelength-selective p-n junction organic photodetectors (OPDs) nearly exclusively use small molecules. In this study, green (G) selective all-polymer p-n junction OPDs are developed by engineering the π-conjugation networks and insulating properties of p-and n-type polymers. Enhanced intermolecular ordering of p-n junction blend films compared to pristine polymer films results in superior hole/electron mobilities and low bimolecular recombination in the devices. Notably, similar G absorption ranges and the huge difference in their absorption coefficients between p-and n-type polymers make excellent G selectivity in the p-n junction OPDs. Thus,...

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“…Currently, high-resolution and high reality cameras are required for use in broadcasting, security, automotive, and various other systems. Moreover, 8K digital cameras or 8K video cameras for ultra-high-definition television (UHD TV) systems have been developed [1,2,3,4,5,6]. The International Telecommunication Union (ITU)-R has standardized video parameters for UHD TV as 7680 (H) × 4320 (V) pixels, 120 Hz frame frequency, etc.…”

Section: Introductionmentioning

confidence: 99%

“…[1]. To meet these specifications, 8K or higher resolution complementary metal-oxide-semiconductor (CMOS) image sensors with high-speed and a high saturation signal have been developed [2,3,4,5,6]. Furthermore, the 8K resolution cameras can be adapted for mobile phones that have a sensor size limitation.…”

Section: Introductionmentioning

confidence: 99%

Front-Inner Lens for High Sensitivity of CMOS Image Sensors

Seok

Kim

2019

Sensors

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Due to the continuing improvements in camera technology, a high-resolution CMOS image sensor is required. However, a high-resolution camera requires that the pixel pitch is smaller than 1.0 μm in the limited sensor area. Accordingly, the optical performance of the pixel deteriorates with the aspect ratio. If the pixel depth is shallow, the aspect ratio is enhanced. Also, optical performance can improve if the sensitivity in the long wavelengths is guaranteed. In this current work, we propose a front-inner lens structure that enhances the sensitivity to the small pixel size and the shallow pixel depth. The front-inner lens was located on the front side of the backside illuminated pixel for enhancement of the absorption. The proposed structures in the 1.0 μm pixel pitch were investigated with 3D optical simulation. The pixel depths were 3.0, 2.0, and 1.0 μm. The materials of the front-inner lens were varied, including air and magnesium fluoride (MgF2). For analysis of the sensitivity enhancement, we compared the typical pixel with the suggested pixel and confirmed that the absorption rate of the suggested pixel was improved by a maximum of 7.27%, 10.47%, and 29.28% for 3.0, 2.0, and 1.0 μm pixel depths, respectively.

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An 8K4K-resolution 60fps 450ke⁻-saturation-signal organic-photoconductive-film global-shutter CMOS image sensor with in-pixel noise canceller

Cited by 24 publications

References 2 publications

Highly Responsive and Thermally Reliable Near‐Infrared Organic Photodiodes Utilizing Naphthalocyanine Molecules Tuned with Axial Ligands

Highly Responsive and Thermally Reliable Near‐Infrared Organic Photodiodes Utilizing Naphthalocyanine Molecules Tuned with Axial Ligands

High‐Detectivity Green‐Selective All‐Polymer p–n Junction Photodetectors

Front-Inner Lens for High Sensitivity of CMOS Image Sensors

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An 8K4K-resolution 60fps 450ke−-saturation-signal organic-photoconductive-film global-shutter CMOS image sensor with in-pixel noise canceller

Cited by 24 publications

References 2 publications

Highly Responsive and Thermally Reliable Near‐Infrared Organic Photodiodes Utilizing Naphthalocyanine Molecules Tuned with Axial Ligands

Highly Responsive and Thermally Reliable Near‐Infrared Organic Photodiodes Utilizing Naphthalocyanine Molecules Tuned with Axial Ligands

High‐Detectivity Green‐Selective All‐Polymer p–n Junction Photodetectors

Front-Inner Lens for High Sensitivity of CMOS Image Sensors

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An 8K4K-resolution 60fps 450ke⁻-saturation-signal organic-photoconductive-film global-shutter CMOS image sensor with in-pixel noise canceller