An 850-nm InAlGaAs strained quantum-well vertical-cavity surface-emitting laser grown on GaAs (311)B substrate with high-polarization stability

Tadanaga, O.; Tateno, Kouta; Uenohara, H.; Kagawa, T.; Amano, C.

doi:10.1109/68.867968

Cited by 21 publications

(6 citation statements)

References 10 publications

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“…crystals [135,136], and elliptical surface etching [137]. Other approaches are based on the epitaxial growth on higher-order substrates [138,139], highly strained QWs [140], elliptically shaped mesa geometries [141,142], and the use of external stress [143]. VCSEL-based sensors based on SMI have many industrial applications in, e.g., cable manufacturing; extrusion; steel, paper processing and other production equipment; and in measuring length and movements of objects [144].…”

Section: A Vcsel-based Sensors With Self-mixing Interferometrymentioning

confidence: 99%

Vertical-cavity surface-emitting lasers for data communication and sensing

et al. 2019

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Vertical-cavity surface-emitting lasers (VCSELs) are the ideal optical sources for data communication and sensing. In data communication, large data rates combined with excellent energy efficiency and temperature stability have been achieved based on advanced device design and modulation formats. VCSELs are also promising sources for photonic integrated circuits due to their small footprint and low power consumption. Also, VCSELs are commonly used for a wide variety of applications in the consumer electronics market. These applications range from laser mice to three-dimensional (3D) sensing and imaging, including various 3D movement detections, such as gesture recognition or face recognition. Novel VCSEL types will include metastructures, exhibiting additional unique properties, of largest importance for next-generation data communication, sensing, and photonic integrated circuits.

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Section: A Vcsel-based Sensors With Self-mixing Interferometrymentioning

confidence: 99%

Vertical-cavity surface-emitting lasers for data communication and sensing

et al. 2019

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“…They have low cost, low threshold current, high-speed modulation, easy fabrication in two-dimensional arrays and circular symmetric output beam [1]. Due to the symmetry of a VCSEL device which has no well-defined and stable polarization [2][3][4][5][6][7], emission occurs along the [011] or [0-11] crystal axis. As a result, the polarization can spontaneously switch between these two directions during operation of the VCSELs, which cannot be tolerated in many important applications.…”

Section: Introductionmentioning

confidence: 99%

Polarization control and mode optimization of 850 nm multi-mode VCSELs using surface grating

Liao

et al. 2021

Appl. Phys. B

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To control the polarization of 850 nm multi-mode oxide-confined vertical-cavity surface-emitting lasers (VCSELs), monolithically integrated surface gratings are investigated. VCSELs with different grating parameters are simulated by the rigorous coupled-wave analysis (RCWA) method. Optical field intensity of two polarization orientations with different grating periods and duty cycles is obtained. The mode characteristics of VCSELs with different grating parameters are achieved by FDTD method. 850 nm surface grating VCSELs are fabricated and characterized, a maximum orthogonal polarization suppression ratio (OPSR) of 20.7 dB is observed. Meanwhile, VCSEL’s output mode characteristics are improved by integrating the surface grating. Application of integrated surface grating technique to achieve dynamically polarization-stable multi-mode VCSELs which enable polarization division multiplexed data transmission, the data throughput over a given link can be doubled.

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“…Experimentally, high-performance compressively strained InGaAlAs 850-nm VCSELs, such as high polarization stability and low threshold current, have been demonstrated. 7,8 Moreover, the compressively strained InGaAlAs quantum wells emitting near 850 nm are mostly discussed for conventional laser diodes. 9−13 Theoretical calculation on optical gain and threshold properties of the strained (Al x Ga 1−x ) y In 1−y As z P 1−z material system had been discussed.…”

Section: Introductionmentioning

confidence: 99%

Optimization of oxide-confinement and active layers for high-speed 850-nm VCSELs

Kuo

Chen

Jow³

et al. 2006

SPIE Proceedings

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Vertical-cavity surface-emitting lasers with variant compressively strained InGaAlAs quantum wells have been investigated. The valence band structures, optical gain spectra, and threshold properties of InGaAlAs/AlGaAs quantum wells are compared and analyzed. The simulation results indicate that the characteristics of InGaAlAs quantum wells can be improved by increasing the amount of compressive strain in quantum well. Furthermore, the properties of VCSELs with these compressively strained InGaAlAs quantum wells are studied numerically. The results of numerical calculations show that the threshold current and maximum output power can be enhanced by using higher compressively strained InGaAlAs quantum well. However, when the compressive strain is larger than about 1.5%, further improvement of the laser performance becomes minimal. The effects of the position and aperture size of the oxide-confinement layers on the laser performance are also investigated. Variation of the oxide layer design is shown to affect the current distribution which makes the temperature in the active region different. It is the main reason for the power roll-off in the VCSEL devices.

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An 850-nm InAlGaAs strained quantum-well vertical-cavity surface-emitting laser grown on GaAs (311)B substrate with high-polarization stability

Cited by 21 publications

References 10 publications

Vertical-cavity surface-emitting lasers for data communication and sensing

Vertical-cavity surface-emitting lasers for data communication and sensing

Polarization control and mode optimization of 850 nm multi-mode VCSELs using surface grating

Optimization of oxide-confinement and active layers for high-speed 850-nm VCSELs

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