An 84 GHz Bandwidth and 20 dB Gain Broadband Amplifier in SiGe Bipolar Technology

Trotta,; Knapp,; Aufinger,; Meister,; Bock,; Simburger,; Scholtz,

doi:10.1109/csics.2006.319909

Cited by 10 publications

(12 citation statements)

References 6 publications

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“…For this, the EF has to be loaded capacitively and moreover, specific biasing conditions must be met. The goal is a RLC series resonant behavior of the EF [9]. This leads to a gain peak at high frequencies.…”

Section: Techniques For Bandwidth Extensionmentioning

confidence: 99%

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A 1 to 32 GHz broadband multi-octave receiver for monolithic integrated vector network analyzers in SiGe technology

Dietz

Bauch

Aufinger

et al. 2018

Int. J. Microw. Wireless Technol.

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A multi-octave receiver chain is presented for the use in a monolithic integrated vector network analyzer. The receiver exhibits a very wide frequency range of 1–32 GHz, where the gain meets the 3 dB-criterion. The differential receiver consists of an ultra-wideband low noise amplifier, an active mixer and an output buffer and exhibits a maximum conversion gain (CG) of 16.6 dB. The main design goal is a very flat CG over five octaves, which eases calibration of the monolithic integrated vector network analyzer. To realize variable gain functionality, without losing much input matching, an extended gain control circuit with additional feedback branch is shown. For the maximum gain level, a matching better than −10 dB is achieved between 1–28 GHz, and up to 30.5 GHz the matching is better than −8.4 dB. For both, the input matching and the gain of the LNA, the influence of the fabrication tolerances are investigated. A second gain control is implemented to improve isolation. The measured isolations between RF-to-LO and LO-to-RF are better than 30 dB and 60 dB, respectively. The LO-to-IF isolation is better than 35 dB. The noise figure of the broadband receiver is between 4.6 and 5.8 dB for 4–32 GHz and the output referred 1-dB-compression-point varies from 0.1 to 4.3 dBm from 2–32 GHz. The receiver draws a current of max. 66 mA at 3.3 V.

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Section: Techniques For Bandwidth Extensionmentioning

confidence: 99%

“…4. Different to [9], the EF is placed at the output rather than at the input. This allows a much better input matching, which is important for a VNA.…”

Section: Techniques For Bandwidth Extensionmentioning

confidence: 99%

A 1 to 32 GHz broadband multi-octave receiver for monolithic integrated vector network analyzers in SiGe technology

Dietz

Bauch

Aufinger

et al. 2018

Int. J. Microw. Wireless Technol.

Self Cite

View full text Add to dashboard Cite

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“…Transistors are the key components of the microwave electronics, particularly in design of the low‐noise amplifier (LNAs) for use in hand‐held or battery‐operated receivers. Since this type of design requires the miniature LNA with a very low power consumption from a very low supply voltage , but high gain G T , low input V in and output V out Standing Wave Ratios, low noise figure F along the available operating bandwidth B , therefore this work is one of the big challenges to Ultra‐Wideband (UWB) transceiver integrations . The first level of this challenge is to select fast and low‐noise, high quality transistors, which is of course the matter of the available technology.…”

Section: Introductionmentioning

confidence: 99%

A simple and efficient honey bee mating optimization approach to performance characterization of a microwave transistor for the maximum power delivery and required noise

Güneş

Demi̇rel

Mahoutı

2015

Int J Numerical Modelling

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In this work, a simple, efficient and multi objective Honey Bee Mating Optimization (HBMO) is presented for the performance characterization of a microwave transistor to deliver maximum power to the load with the required noise F req . Thus all the possible compatible {F req ≥ F min , V out = 1, G Tmax } triplets and the corresponding source Z S and load Z L = Z * out (Z S ) terminations can be obtained in the device operation domain of (V DS , I DS and f) without working analytically for the nonlinear performance and stability equations. HBMO is a recently emerging metaheuristic algorithm that combines the powers of the simulated annealing and genetic algorithms. Here, a microwave transistor is chosen as a case study, effectiveness and efficiency of the HBMO are shown by comparing its performance to those of the standard meta-heuristics Genetic and Particle Swarm algorithms and the mean cost results for 10 runs are found to be 0.22, 1.65 and 1.85, respectively, for the comparable execution times. Furthermore, all the numerical results are found to agree with their analytical counterparts obtained using the microwave, linear circuit and noise theories. The Feasible Design Target Space FDTS can be built by the cross relations among all the possible compatible {F req ≥ F min , V out = 1, G Tmax } triplets together their terminations {Z S , Z L = Z * out (Z S )} covering all the possible amplifier designs where both noise figure and output power are at a premium. Copyright

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“…To meet these stringent requirements, first of all, the fast and low-noise, high-quality transistors are needed, which is of course the matter of the available technology. Traditionally, wideband microwave amplifiers relied on transistors realized with composite semiconductors, e.g., GaAs, because of the intrinsic superior frequency characteristics of such devices [1][2][3]. The second level of the challenge is the accurate analysis performance capabilities of the chosen transistor to obtain the feasible design target space, then is to design the microwave amplifier subject to the feasible design target space [4].…”

Section: Introductionmentioning

confidence: 99%

Memetic optimization algorithm applied to design microwave amplifier for the specific gain value constrained by the minimum noise over the available bandwidth

Cengiz

Kılıç

2010

Int J RF and Microwave Comp Aid Eng

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In this work, the neural performance and fuzzy logic data sheets of the transistor are used to determine the feasible design target space in the optimization of a microwave amplifier. The compatible (Noise F, Input VSWR V i , Gain G T ) triplets and their (Z S , Z L ) terminations of a microwave transistor are exploited for an amplifier design with the minimum noise F min (f), required gain G Treq (f), and a low input VSWR V i over the available bandwidth. The multi-objective design procedure is obtained from Z S (f), Z L (f) terminations with the unit-elements and short-circuited stubs in the LþL configurations and memetic optimization algorithm is successfully implemented as an optimization tool. A typical design example is given with its challenging performance in the simple LþL configurations realizable by the microstrip line technology. V C 2010 Wiley Periodicals, Inc. Int J RF and Microwave CAE 20:546-556, 2010.

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An 84 GHz Bandwidth and 20 dB Gain Broadband Amplifier in SiGe Bipolar Technology

Cited by 10 publications

References 6 publications

A 1 to 32 GHz broadband multi-octave receiver for monolithic integrated vector network analyzers in SiGe technology

A 1 to 32 GHz broadband multi-octave receiver for monolithic integrated vector network analyzers in SiGe technology

A simple and efficient honey bee mating optimization approach to performance characterization of a microwave transistor for the maximum power delivery and required noise

Memetic optimization algorithm applied to design microwave amplifier for the specific gain value constrained by the minimum noise over the available bandwidth

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