An 8 channel, 20 V output CMOS switching driver with 3.3 V power supply using triple-well biasing techniques for integrated MEMS device control

Takayasu, Motohiro; Shirane, Atsushi; Lee, Sangyeop; Yamane, Daisuke; Ito, Hiroyuki; Mi, Xiaoyu; Inoue, Hiroaki; Nakazawa, Fumio; Ueda, Shigenori; Ishihara, Noboru; Masu, Kazuya

doi:10.7567/jjap.53.04ee13

Cited by 5 publications

(2 citation statements)

References 28 publications

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“…Although the increment in the theoretical output voltage is proportional to the number of the stages, the actual maximum voltage is limited by two factors: The breakdown voltage of parasitic diodes in the CMOS LSI circuits and the loss in the threshold voltage of MOS transistors. For instance, the breakdown voltage of the low-voltage logic circuit in the standard CMOS process is 50 V (10×V DD ) at most, which is the breakdown voltage of p-n junction between the deep n-well and p-diff layer [36]. Although charge pumps based on non-transistor components such as poly-silicon diodes have been proposed, their maximum voltages are still less than 50 V [37].…”

Section: Designmentioning

confidence: 99%

On-Chip CMOS-MEMS-Based Electroosmotic Flow Micropump Integrated With High-Voltage Generator

Okamoto

Ryoson

Fujimoto

et al. 2020

J. Microelectromech. Syst.

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The rapid development of microfluidic technology has increased the demand for the integration of driving circuits in the microfluidic devices. We have proposed a novel on-chip electroosmotic (EOF) micropump integrated with a high-voltage (HV) generator. The HV (49.8 V) generator is based on a Dickson charge pump, which is fabricated on a silicon-on-insulator (SOI) substrate by the standard CMOS process, and the isolation is achieved by MEMS post-processed deep trench isolation. The size of the 49.8 V generator is 425×353 µ m 2 . The HV required for the successful operation of the micropump was generated by the integrated driving circuit with a low-voltage power supply. The maximum flow velocity and flow rate of the proposed EOF micropump were measured as 137 µ m/s and 167 nL/min, respectively when it was driven by the integrated 49.8 V generator. The efficiency of the micropump is demonstrated by comparing it with the previously reported micropumps. The proposed integration technique is reliable and effective, and potentially boosts the practical applications of lab-on-chip devices.

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Section: Designmentioning

confidence: 99%

On-Chip CMOS-MEMS-Based Electroosmotic Flow Micropump Integrated With High-Voltage Generator

Okamoto

Ryoson

Fujimoto

et al. 2020

J. Microelectromech. Syst.

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show abstract

“…Recently, MEMS sensors have become a hot topic due to their "consumerization" trend and fast-growing market, and more and more new applications of MEMS sensors have begun to be found in consumer products such as mobile phones, CMOS pad, etc. [1][2][3][4][5][6] With the development of the Internet of Things, sensor networks and autonomous vehicles, the market for MEMS sensors will increase sharply, especially in the automotive electronics area. [7][8][9][10][11] Because of the diversity of the MEMS process, some kind of MEMS sensor product will integrate the CMOS circuit and MEMS module through the PCB or packaging level, such as a MEMS microphone, etc.…”

Section: Introductionmentioning

confidence: 99%

MEMS micro-bridge structure-based process platform fabricated with CMOS Al BEOL compatible process

Kang¹,

Zhong²,

Shen³

et al. 2019

Jpn. J. Appl. Phys.

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A common MEMS micro-bridge structure-based process was developed on 200 mm standard CMOS Al back end of line. Thick amorphous-Si (alpha-Si) film was developed and used as the sacrificial material with well-controlled film stress to improve the wafer warpage. Anchor/contact structure was formed by a trench first scheme with no metal or dielectric plug in it, and thin Ti/TiN bilayer barrier metal was used as an electrode layer to define the sensing material resistor with improved step coverage on the anchor sidewall. A wet etching process was introduced for electrode layer patterning with almost no damage to the sensing material. The micro-bridge structure-based bolometer device was fabricated and evaluated on this platform. Good electrical performance had been achieved, and after optimized stress engineering the range of the released micro-bridge surface height variation was controlled to less than 10%, which indicated that the process platform can well match the bolometer, micro-lens and related sensor requirements.

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On-Chip High-Voltage Charge Pump With MEMS Post-Processed Standard 5-V CMOS on SOI for Electroosmotic Flow Micropumps

Okamoto

Takehara

Fujimoto

et al. 2018

IEEE Electron Device Lett.

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An 8 channel, 20 V output CMOS switching driver with 3.3 V power supply using triple-well biasing techniques for integrated MEMS device control

Cited by 5 publications

References 28 publications

On-Chip CMOS-MEMS-Based Electroosmotic Flow Micropump Integrated With High-Voltage Generator

On-Chip CMOS-MEMS-Based Electroosmotic Flow Micropump Integrated With High-Voltage Generator

MEMS micro-bridge structure-based process platform fabricated with CMOS Al BEOL compatible process

On-Chip High-Voltage Charge Pump With MEMS Post-Processed Standard 5-V CMOS on SOI for Electroosmotic Flow Micropumps

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