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2019
DOI: 10.1109/tcsi.2019.2927999
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An 18 nW −47/−40 dBm Sensitivity 3/100 kbps MEMS-Assisted CMOS Wake-Up Receiver

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Cited by 14 publications
(8 citation statements)
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“…Due to absence of the FC stages, almost all the WuRXs from this class rely closely on bulky off-chip high-Q components to build IMN and achieve band selection and passive voltage gain [4][5][6][7][8][9][10][11][12][13][14]. Since the Q-factor decreases significantly as the carrier frequency increases, these WuRXs are further constrained to applications with frequencies below 1 GHz.…”
Section: Direct Rf Signal Detection Receiversmentioning
confidence: 99%
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“…Due to absence of the FC stages, almost all the WuRXs from this class rely closely on bulky off-chip high-Q components to build IMN and achieve band selection and passive voltage gain [4][5][6][7][8][9][10][11][12][13][14]. Since the Q-factor decreases significantly as the carrier frequency increases, these WuRXs are further constrained to applications with frequencies below 1 GHz.…”
Section: Direct Rf Signal Detection Receiversmentioning
confidence: 99%
“…Since the Q-factor decreases significantly as the carrier frequency increases, these WuRXs are further constrained to applications with frequencies below 1 GHz. 400 − 500-MHz is a particular frequency range that attracts most of the state-of-the-art WuRXs from this class to locate in, for instance [10,12,13,[16][17][18][19]. Furthermore, due to insufficient gain at the RF path, they may easily suffer from lower signal-to-noise ratio (SNR) at the BB and hence obtain a worse sensitivity compared to FC WuRXs.…”
Section: Direct Rf Signal Detection Receiversmentioning
confidence: 99%
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