An 18 GHz-band MMIC linearizer using a parallel diode with a bias feed resistance and a parallel capacitor

Yamauchi, K.; Nakayama, Minoru; Ikeda, Yukio; Nakaguro, H.; Kadowaki, Naoto; Araki, Tsunehiko

doi:10.1109/mwsym.2000.862261

Cited by 20 publications

(7 citation statements)

References 2 publications

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“…The predistorter linearization has the features of the miniaturized size, the low complexity in the configuration, and the stable operation. There have been a few reports on the on-chip implementation of the RF predistorter using a Schottky diode [1] and a GaAs FET [2,3]. However, these predistorters were demonstrated in compound semiconductor processes.…”

Section: Introductionmentioning

confidence: 99%

A CMOS RF predistorter using diode‐connected MOSFET

Lin

2007

Micro & Optical Tech Letters

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Section: Introductionmentioning

confidence: 99%

A CMOS RF predistorter using diode‐connected MOSFET

Lin

2007

Micro & Optical Tech Letters

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“…It has the advantages of smaller size, less complexity, and lower cost than other linearization techniques [6], [7]. Various predistortion linearizers, such as the diode linearizer [8], [9], the passive field-effect transistor (FET) [10]- [12], and the base-emitter diode of the heterojunction bipolar transistor (HBT) [13] have been applied to microwave applications below 20 GHz. However, these linearizers [9], [10] usually cause high insertion losses of 6-11 dB, which means we need to add an extra buffer amplifier to compensate for the power-gain loss in microwave frequencies.…”

Section: Introductionmentioning

confidence: 99%

“…Various predistortion linearizers, such as the diode linearizer [8], [9], the passive field-effect transistor (FET) [10]- [12], and the base-emitter diode of the heterojunction bipolar transistor (HBT) [13] have been applied to microwave applications below 20 GHz. However, these linearizers [9], [10] usually cause high insertion losses of 6-11 dB, which means we need to add an extra buffer amplifier to compensate for the power-gain loss in microwave frequencies. In addition, when these linearizers [8]- [12] are integrated with MMIC PAs, they required separate bias circuits which increase the die area.…”

Section: Introductionmentioning

confidence: 99%

Design and analysis of a 44-GHz MMIC low-loss built-in linearizer for high-linearity medium power amplifiers

Tsai

Chang

et al. 2006

IEEE Trans. Microwave Theory Techn.

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A 44-GHz monolithic microwave integrated circuit (MMIC) low-loss built-in linearizer using a shunt cold-mode high-electron mobility transistor (HEMT), based on the predistortion techniques, is presented in this paper. The proposed cold-mode HEMT linearizer can enhance the linearity of the power amplifier (PA) with a low insertion loss (IL 2 dB), a compact die-size, and no additional dc power consumption. These advantages make the linearizer more suitable for millimeter-wave (MMW) applications. The physical mechanism of the gain expansion characteristics of the proposed linearizer is analyzed. A systematic design procedure for a low-loss linearizer is developed, which includes: 1) insertion loss minimization through a device-size selection and 2) linearity optimization through a two-tone test. To demonstrate the general usefulness of the proposed linearizer, the linearizer was applied to a two-stage 44-GHz MMIC medium PA and a commercial MMW PA module. After linearization, the output spectrum regrowth is suppressed by 7-9 dB. To keep the adjacent channel power ratio below 40 dBc, the output power has been doubled from 15 to 18 dBm at 44 GHz. The error vector magnitude of the 16-quadrature amplitude modulation signal can be reduced from 6.11% to 3.87% after linearization. To the best of our knowledge, this is the first multistage MMW PA with a low-loss built-in linearizer.Index Terms-Linearizer, millimeter-wave (MMW), monolithic microwave integrated circuit (MMIC), nonlinear, power amplifier (PA).

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“…Consequently, lightweight PA modules are necessary for the antenna to swivel smoothly and diode linearizers are attractive for such applications. Several papers show excellent performances using diode linearizer [5]- [7]. There are, however, few reports of the diode linearizers which have positive phase deviation and gain expansion when the input power is increased [8], [9].…”

Section: Introductionmentioning

confidence: 99%

A novel linearizing technique using dual diode based linearizers for lightweight power amplifiers

Kashiwa

Ohnishi

Yamamoto

et al. 2005

2005 European Microwave Conference

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-A novel way to compensate the distortion of Power Amplifier(PA) modules is presented in this paper. A diode linearizer with an inductor is used to compensate the distortion of the PA using LDMOS FET and has a characteristic of a positive phase and a gain expansion. Two diode-based linearizers are employed to compensate the distortions. One linearizer compensates the distortion of the phase, mainly. The other compensates the ones of the gain and the phase. It is possible to compensate the distortion of the PA module using this linearizing technique even though the driver stage of the PA module has the distortion. This implies that the PA modules can operate with high efficiencies. In addition, it is possible to achieve lightweight PA modules. A modulated spectrum power of 8 dB and an EVM of 1.4 % can be improved using the proposed techniques in the PA module when a 16-QAM modulated signal is used at a 42 dBm output power and a 3 dB back-off condition.

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An 18 GHz-band MMIC linearizer using a parallel diode with a bias feed resistance and a parallel capacitor

Cited by 20 publications

References 2 publications

A CMOS RF predistorter using diode‐connected MOSFET

A CMOS RF predistorter using diode‐connected MOSFET

Design and analysis of a 44-GHz MMIC low-loss built-in linearizer for high-linearity medium power amplifiers

A novel linearizing technique using dual diode based linearizers for lightweight power amplifiers

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