An 18–56-GHz Wideband GaN Low-Noise Amplifier With 2.2–4.4-dB Noise Figure

In low noise amplifier (LNA) design, achieving minimum noise figure (NF) and enhanced gain is equally important in the field of communication. The major aim of this design with previous methods are those having implemented in the topology of design like metal oxide semiconductor field effect transistor at common source connection topology, pole‐based transformer boosting, and dual feedback technique. However, these methods fail to reach the desired performance due to their low NF and low gain. In order to overcome these failures and their causes, this article presented a topology in LNA design using a transformer as boosting component to improve the performance of NF and gain for millimeter‐wave applications. It has three common gate stages connected in cascode form, and three transformers are acquired to link the drain to the input signal. Transformers permit radio frequency feeding signal from drain to source, and output from the previous stage is connected to the input of the next stage. This connection increases the gain of the circuit and an enlarged coupling coefficient of value “1,” which minimizes noise. The unilateral coefficient remains to be 1, to make the circuit stable throughout execution. NF value can be minimized by properly selecting conductance coefficient and S‐parameter values. Since the transformer is used to provide feedback in this circuit, stability condition has to be analyzed carefully. Output load value is selected optimum as it creates an impact on the stability of LNA. This topology implemented in LNA design helps to increase the gain by boosting the signal input, and hence, in turn, it increases overall gain performance. Similarly, while executing this optimal LNA design using transformer boosting technique in CADENCE software, this LNA exhibits a minimum NF of 3 dB at 30 GHz and power gain of 12.2 dB at 50 GHz in measurement. Comparatively, the proposed LNA design overruns conventional methods and consumes a power supply of 1.1 V.

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“…Tong et al 15 have presented a four‐stage cascade and common‐source LNA with

48.1\times 1\ {\mathrm{mm}}^2

chip area with power dissipation of

1.4\ \mathrm{W}

. As it covered a wide BW using GaN LNA at a frequency range of

10\ \mathrm{MHz}

.…”

Section: Literature Reviewmentioning

confidence: 99%

“…Tong et al 15 have presented a four-stage cascade and common-source LNA with 48.1 × 1 mm 2 chip area with power dissipation of 1.4 W. As it covered a wide BW using GaN LNA at a frequency range of 10 MHz. LNA designed as a monolithically integrated wideband that used 0.1 𝜇𝑚 GaN∕Si processes.…”

Section: Literature Reviewmentioning

confidence: 99%

Low noise amplifier design with enhanced noise and gain performance using transformer boosting method for millimeter‐wave applications

Agarwal

Gupta

Kumar

2022

Trans Emerging Tel Tech

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“…5,6 Benefited from the high breakdown voltage, GaN LNAs with high robustness have attracted great interest, and are widely reported. 7,8 However, the power handling capacity of GaN LNAs is limited at the millimeter-wave band; moreover, the power consumption of GaN LNAs is relatively high. The PIN diode has attracted great interest for limiter-LNA MMIC applications due to its high power-handling capability.…”

Section: Introductionmentioning

confidence: 99%

“…The input‐power handling capability has been significantly improved, but the FET‐based limiter topology is more complicated and needs an extra power supply 5,6 . Benefited from the high breakdown voltage, GaN LNAs with high robustness have attracted great interest, and are widely reported 7,8 . However, the power handling capacity of GaN LNAs is limited at the millimeter‐wave band; moreover, the power consumption of GaN LNAs is relatively high.…”

Section: Introductionmentioning

confidence: 99%

A compact Ka‐band limiter‐low noise amplifier MMIC with high power capability

Yang

Zhang

Wang

et al. 2022

Micro & Optical Tech Letters

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This paper presents a 30–36 GHz limiter low‐noise amplifier (limiter‐LNA) MMIC for high power and high mobility millimeter‐wave radar systems. The PIN‐diode limiter network and the LNA are codesigned to realize high input‐power handling capability, good small‐signal performance, and small chip area. A two‐state matching capacitor is presented to improve both the input‐power handling capability at the high input‐power level and the input return loss at the small‐signal level. The proposed circuit is fabricated with a combined PIN/0.15‐µm‐GaAs‐pHEMT process. The limiter‐LNA is capable of handling 39 dBm continuous wave (CW) input‐power without failure with only two limiter stages. The measured noise figure is 1.8–2.5 dB, the small‐signal gain is 18.5 ± 0.5 dB, the output power at 1 dB compression point is larger than 11 dBm, and the dc power consumption is 72 mW. The chip area, including testing pads, is only 2.1 mm × 1.0 mm. This limiter‐LNA MMIC is believed to have the highest input‐power handling capability and smallest chip area among limiter‐LNA MMICs at this frequency range reported up to date.

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mentioning

confidence: 99%

2020 Index IEEE Microwave and Wireless Components Letters Vol. 30

2020

IEEE Microw. Wireless Compon. Lett.

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This index covers all technical items-papers, correspondence, reviews, etc.-that appeared in this periodical during 2020, and items from previous years that were commented upon or corrected in 2020. Departments and other items may also be covered if they have been judged to have archival value.The Author Index contains the primary entry for each item, listed under the first author's name. The primary entry includes the coauthors' names, the title of the paper or other item, and its location, specified by the publication abbreviation, year, month, and inclusive pagination. The Subject Index contains entries describing the item under all appropriate subject headings, plus the first author's name, the publication abbreviation, month, and year, and inclusive pages. Note that the item title is found only under the primary entry in the Author Index.

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An 18–56-GHz Wideband GaN Low-Noise Amplifier With 2.2–4.4-dB Noise Figure

Cited by 21 publications

References 18 publications

Low noise amplifier design with enhanced noise and gain performance using transformer boosting method for millimeter‐wave applications

Low noise amplifier design with enhanced noise and gain performance using transformer boosting method for millimeter‐wave applications

A compact Ka‐band limiter‐low noise amplifier MMIC with high power capability

2020 Index IEEE Microwave and Wireless Components Letters Vol. 30

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