An 11.4% efficient polycrystalline thin film solar cell based on CuInS2 with a Cd-free buffer layer

Braunger, D.; Hariskos, Dimitrios; Walter, T.; Schock, Hans‐Werner

doi:10.1016/0927-0248(95)00069-0

Cited by 188 publications

(79 citation statements)

References 8 publications

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“…In 2 S 3 has been used as a buffer layer for CuInS 2 /In 2 S 3 /ZnO type solar cells in order to improve conversion efficiency [3]. A Cu(In, Ga)Se 2 based solar cell prepared with chemical bath deposited In 2 S 3 as a buffer layer could reach efficiencies (15.7%) near to those obtained by devices made with a standard CdS buffer layer [4]. Indium sulfide (In 2 S 3 ) is a III-VI compound originating from the II-VI semiconductor by replacing group II metals by group III elements [5].In 2 S 3 exhibits different polymorphic structures such as α, β and γ de pending on the processing parameters [6].The β -In 2 S 3 phase was found to be the stable crystalline phase of indium sulfide at room temperature with tetragonal structure [7].…”

Section: Introductionmentioning

confidence: 99%

Compositional, Structural and Optical Properties Analysis of ?-In2S3 Thin Films Prepared by Chemical Spray Pyrolysis at Different Substrate Temperatures

2017

IJSR

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: In 2 S 3 thin films were prepared using chemical spray pyrolysis technique. All films were deposited on FTO (Fluorine Doped Tin Oxide) coated glass substrate with different temperatures .The films obtained were characterised by X-ray diffraction (XRD), scanning electronmicroscopy (SEM,) optical transmission spectra, energy dispersive spectroscopy (EDS) and Atomic force microscopy (AFM). XRD studies have revealed that the samples are β-In 2 S 3 . All the films grown exhibited transparency over 55% in the visible spectral region. According to SEM, the surface morphologies of the films were free of defects. The AFM micrograph show that the films adhered to the FTO substrate with a small grain size.The optical band gap energy varied from 2.73 eV to 2.90 eV.

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Section: Introductionmentioning

confidence: 99%

Compositional, Structural and Optical Properties Analysis of ?-In2S3 Thin Films Prepared by Chemical Spray Pyrolysis at Different Substrate Temperatures

2017

IJSR

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“…It is used for many technological applications due to its stability, wider band gap and photoconductive behaviour [2,3]. It can be used as an effective nontoxic substitute for cadmium sulfide (CdS) in Cu(In,Ga)Se 2 based solar cells [4]. Besides, it has applications for preparation of green and red phosphors for the manufacture of picture tubes for colour televisions [5,6].…”

Section: Introductionmentioning

confidence: 99%

Solvothermal Synthesis and Characterization of Flower-Like b-In2S3 Microparticles

Gorai¹

2017

Asian J. Chem.

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Flower-like β-In2S3 particles have been successfully synthesized via solvothermal process by using acetylacetone-water solvent mixture. The products were characterized by X-ray diffraction, scanning electron microscopy, reflectance spectra. X-ray diffraction analysis confirms the formation of cubic β-In2S3. Microstructural investigation with SEM indicated that the particle size increases with increasing reaction time. The optical band gap determined from reflectance spectra was found to have values within the range of 2.34-2.49 eV.

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“…Infrared, Raman and optical study of and -In 2 S 3 compounds have been reported [12]. Studies on solar cells using nanocrystalline In 2 S 3 /In 2 O 3 thin film electrodes were already reported [13]. In 2 S 3 also finds application in preparation of green and red phosphors and manufacture of picture tube for color televisions.…”

Section: Introductionmentioning

confidence: 99%

Structural and Optical Properties of Indium Sulfide Thin Films Prepared by Silar Technique

Warrier¹,

John²,

Vijayakumar³

et al. 2009

Open Cond Matt Phy J

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Indium sulfide thin films were prepared using a relatively new, simple and inexpensive technique called Successive Ionic Layer Adsorption and Reaction (SILAR). SILAR deposition conditions for obtaining good quality -Indium sulfide (In 2 S 3 ) films were optimized. The films were structurally and optically characterized using X-ray diffraction (XRD), photosensitivity measurements and optical absorption studies. Effects of using different precursor solutions, indium chloride (InCl 3 ) and indium nitrate (In(NO 3 ) 3 ) and post deposition annealing were also studied. Films fabricated with In(NO 3 ) 3 showed good crystallinity without any post deposition annealing while films prepared using InCl 3 were crystalline only when annealed at 400 0 C. The band gap of the films varied from 2.32 to 2.92 eV depending on the deposition conditions.

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An 11.4% efficient polycrystalline thin film solar cell based on CuInS2 with a Cd-free buffer layer

Cited by 188 publications

References 8 publications

Compositional, Structural and Optical Properties Analysis of ?-In2S3 Thin Films Prepared by Chemical Spray Pyrolysis at Different Substrate Temperatures

Compositional, Structural and Optical Properties Analysis of ?-In2S3 Thin Films Prepared by Chemical Spray Pyrolysis at Different Substrate Temperatures

Solvothermal Synthesis and Characterization of Flower-Like b-In2S3 Microparticles

Structural and Optical Properties of Indium Sulfide Thin Films Prepared by Silar Technique

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