1980
DOI: 10.1070/qe1980v010n02abeh009895
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Amplification of long and short pulses in the medium of a DF–CO2chemical laser

Abstract: Poly(3-hexylthiophene) thin-film transistors with anodized high-dielectric constant () tantalum pentoxide (Ta 2 O 5 ) and spincoated poly(4-vinylphenol) (PVP) film dual insulator layers were demonstrated. The polymeric PVP layer covering the Ta 2 O 5 can considerably improve the transistor performance. The mobility was increased up to 3:07 Â 10 À2 cm 2 /(VÁs), which is much higher than that obtained by only using a PVP or Ta 2 O 5 single dielectric layer. The threshold voltage of the dual-insulator device was … Show more

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