Amplification of green emission of Ho3+ ions in lead silicate glasses by sensitizing with Bi3+ ions

Suresh, B.; Zhydachevskii, Ya.; Brik, M.G.; Suchocki, A.; Reddy, M. Srinivasa; Piasecki, M.; Veeraiah, N.

doi:10.1016/j.jallcom.2016.05.056

Cited by 40 publications

(8 citation statements)

References 29 publications

Supporting

Mentioning

Contrasting

Order By: Relevance

“…De‐excitation involving 3 P 1 to 1 S 0 transition of Bi 3+ results in orange‐red emission that could overlap with the 4 F 9/2 to 4 I 15/2 emission transition of Er 3+ . Energy transfer from Bi 3+ to Er 3+ is another possibility that can change relative intensities of green and red emission from Er 3+ . However, in the present study, the relative intensity ratio of green to red emission, known as the GRR ratio, did not show any variation with Bi 3+ addition.…”

Section: Resultscontrasting

confidence: 85%

“…Line broadening and shifting of peak positions were due to the combined effect of lattice distortion and distribution in bond angles/lengths (energies) brought about by Bi 3+ incorporation into the NaYbF 4 :Er lattice. In addition to this, additional peaks around 573 and 620 cm −1 were observed for the Bi 3+ ‐containing sample which were attributed to Bi–O vibrations . Detailed FTIR experiments were also carried out for 30, 40 and 50 at.% Bi 3+ ‐containing samples to understand variation of Bi 3+ concentration on the Bi–O line profile.…”

Section: Resultsmentioning

confidence: 96%

See 1 more Smart Citation

Effect of Bi³⁺ addition on the upconversion luminescence properties of NaYbF₄:Er

et al. 2019

View full text Add to dashboard Cite

In this study, Bi 3+ incorporation in NaYbF 4 :Er lattice and its influence on upconversion luminescence properties have been investigated in detail using techniques such as temperature-dependent luminescence, Fourier transform infrared spectroscopy and X-ray diffraction (XRD). The study was carried out to develop phosphors with improved upconversion luminescence. From photoluminescence and lifetime measurements it is inferred that luminescence intensity from NaYbF 4 :Er increases with Bi 3+ addition. The sample containing 50 at.% Bi 3+ ions exhibited optimum upconversion luminescence. Increased distance between Yb 3+ -Yb 3+ and Er 3+ -Er 3+ due to Bi 3+ incorporation into the lattice and associated decrease in the extent of dipolar interaction/self-quenching are responsible for increase in lifetime values and luminescence intensities from Er 3+ ions. Incorporation of Bi 3+ into NaYbF 4 :Er lattice reduced self-quenching among Yb 3+ -Yb 3+ ions and this facilitated energy transfer from Yb 3+ to Er 3+ . This situation also explains decrease in the extent of temperature-assisted quenching of emission from thermally coupled 2 H 11/2 and 4 S 3/2 levels of Er 3+ . Based on Rietveld refinement of XRD patterns it was confirmed that a maximum of 10 at.% of Bi 3+ added was incorporated into the NaYbF 4 :Er lattice and the remaining complex co-exists as a BiOF phase. These results are of significant interest in the area of development of phosphors based on Yb 3+ -Er 3+ upconversion luminescence. K E Y W O R D SBiOF, lifetime, NaYbF 4 :Er, upconversion, XRD | INTRODUCTIONUpconversion (UC) phosphors give anti-Stokes emission upon irradiation with near-infrared (NIR) light even at low power densities compared with other conventional nonlinear phenomena such as two photon absorption and second harmonic generation. [1][2][3] Such materials are potential candidates for optical thermal sensors [4] , light emitting displays [5,6] , upconversion laser sources [7,8] , cancer treatment [9] , and, most importantly, in solar cells [10] because of its light absorption over extended wavelength regions. Inorganic crystalline materials doped with activators such as Er 3+ , Tm 3+ , or Ho 3+ belong to the category of upconversion luminescent materials and some of these also find application in bio-imaging. [11,12] The abovementioned activators are best suited for the upconversion process because of their ladder-like energy level structure. Such UC materials are also co-doped with Yb 3+ for better absorption of 980 nm

show abstract

Section: Resultscontrasting

confidence: 85%

Section: Resultsmentioning

confidence: 96%

Effect of Bi³⁺ addition on the upconversion luminescence properties of NaYbF₄:Er

et al. 2019

View full text Add to dashboard Cite

show abstract

“…(544 and 548 nm), 5 F 5 -5 I 8 (650, 655 and 663 nm) and 5 S 2 + 5 F 4 -5 I 7 (753 and 759 nm) [27,28].…”

Section: Resultsmentioning

confidence: 97%

Synthesis and luminescent properties of (RE0.95Ln0.05)2O2S (RE = La, Y; Ln = Ho, Tm)

Сальникова

Denisenko

Kolesnikov

et al. 2021

Journal of Solid State Chemistry

View full text Add to dashboard Cite

“…The appearance of TeO 3 was also detected by XPS, as shown in Figure 5 . Band C, which was in the range of 430–500 cm −1 , is commonly associated with the Si-O-Si bending of Q 4 species [ 39 , 46 , 47 ]. The peak around band E (590–650 cm −1 ) is attributed to the Si-O-Si bridges (bending vibration) between two Q 2 species [ 46 , 48 ].…”

Section: Resultsmentioning

confidence: 99%

Effect of Substrate Temperature on Morphological, Structural, and Optical Properties of Doped Layer on SiO2-on-Silicon and Si3N4-on-Silicon Substrate

Kamil

Jose

2022

Nanomaterials

View full text Add to dashboard Cite

A high concentration of Er3+ without clustering issues is essential in an Er-doped waveguide amplifier as it is needed to produce a high gain and low noise signal. Ultrafast laser plasma doping is a technique that facilitates the blending of femtosecond laser-produced plasma from an Er-doped TeO2 glass with a substrate to form a high Er3+ concentration layer. The influence of substrate temperature on the morphological, structural, and optical properties was studied and reported in this paper. Analysis of the doped substrates using scanning electron microscopy (SEM) confirmed that temperatures up to approximately 400 °C are insufficient for the incoming plasma plume to modify the strong covalent bonds of silica (SiO2), and the doping process could not take place. The higher temperature used caused the materials from Er-doped tellurite glass to diffuse deeper (except Te with smaller concentration) into silica, which created a thicker film. SEM images showed that Er-doped tellurite glass was successfully diffused in the Si3N4. However, the doping was not as homogeneous as in silica.

show abstract

Amplification of green emission of Ho3+ ions in lead silicate glasses by sensitizing with Bi3+ ions

Cited by 40 publications

References 29 publications

Effect of Bi³⁺ addition on the upconversion luminescence properties of NaYbF₄:Er

Effect of Bi³⁺ addition on the upconversion luminescence properties of NaYbF₄:Er

Synthesis and luminescent properties of (RE0.95Ln0.05)2O2S (RE = La, Y; Ln = Ho, Tm)

Effect of Substrate Temperature on Morphological, Structural, and Optical Properties of Doped Layer on SiO2-on-Silicon and Si3N4-on-Silicon Substrate

Contact Info

Product

Resources

About

Amplification of green emission of Ho3+ ions in lead silicate glasses by sensitizing with Bi3+ ions

Cited by 40 publications

References 29 publications

Effect of Bi3+ addition on the upconversion luminescence properties of NaYbF4:Er

Effect of Bi3+ addition on the upconversion luminescence properties of NaYbF4:Er

Synthesis and luminescent properties of (RE0.95Ln0.05)2O2S (RE = La, Y; Ln = Ho, Tm)

Effect of Substrate Temperature on Morphological, Structural, and Optical Properties of Doped Layer on SiO2-on-Silicon and Si3N4-on-Silicon Substrate

Contact Info

Product

Resources

About

Effect of Bi³⁺ addition on the upconversion luminescence properties of NaYbF₄:Er

Effect of Bi³⁺ addition on the upconversion luminescence properties of NaYbF₄:Er