Photodetectors
with the ability to detect light over a broad spectral
range at room temperature (RT) are attracting considerable attention
because of their wide range of potential applications in electronic
and optoelectronic devices. In this work, an ultrabroadband photodetector
design based on amorphous MoS2 (a-MoS2) prepared
by magnetron sputtering is reported for the first time. In association
with a narrow bandgap of 0.196 eV that originated from defects, these
devices have realized an ultrabroadband photodetection range from
473 to 2712 nm with photoresponsivity as high as 47.5 mA W–1, which is comparable with most existing broadband photodetectors.
Unlike many other photodetectors, which require complex manufacturing
processes and rare photoactive materials that are difficult to obtain
or fabricate, the amorphous MoS2 photodetector based on
the magnetron sputtering technique offers easy and rapid fabrication,
ultralow cost, a large-scale manufacturing capability, no detrimental
effects on the environment or humans, and compatibility with semiconductor
processing. These advantages indicate that the proposed photodetector
has significant potential for electronic and optoelectronic applications
and offers a new path for development of ultrabroadband photodetectors.