Amperometric sensing of chemical oxygen demand at glassy carbon and silicon electrodes modified with boron-doped diamond

Bogdanowicz, Robert; Czupryniak, Justyna; Gnyba, Marcin; Ryl, Jacek; Ossowski, Tadeusz; Sobaszek, Michał; Siedlecka, Ewa Maria; Darowicki, Kazimierz

doi:10.1016/j.snb.2012.12.007

Cited by 33 publications

(13 citation statements)

References 36 publications

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“…Moreover, diamond-coated tips are attractive for nanosensing application because they have remarkable electrochemical features which consist of chemical stability [16], a wide electrochemical window [17] and high anodic stability [18]. B-NCD achieves semi-metallic conductivity using in situ boron doping in chemical vapour deposition (CVD) process [19,20]. Boron-doped diamond films are commonly used as an electrode material for utilization with hazardous organic compounds or sensing applications [18,19,21].…”

Section: Introductionmentioning

confidence: 99%

“…B-NCD achieves semi-metallic conductivity using in situ boron doping in chemical vapour deposition (CVD) process [19,20]. Boron-doped diamond films are commonly used as an electrode material for utilization with hazardous organic compounds or sensing applications [18,19,21]. Moreover, due to its biocompatibility, it is a great material for sensing various kinds of proteins or DNA [22,23].…”

Section: Introductionmentioning

confidence: 99%

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Fabrication and characterization of boron-doped nanocrystalline diamond-coated MEMS probes

et al. 2016

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Fabrication processes of thin boron-doped nanocrystalline diamond (B-NCD) films on silicon-based micro-and nano-electromechanical structures have been investigated. B-NCD films were deposited using microwave plasma assisted chemical vapour deposition method. The variation in B-NCD morphology, structure and optical parameters was particularly investigated. The use of truncated cone-shaped substrate holder enabled to grow thin fully encapsulated nanocrystalline diamond film with a thickness of approx. 60 nm and RMS roughness of 17 nm. Raman spectra present the typical boron-doped nanocrystalline diamond line recorded at 1148 cm -1 . Moreover, the change in mechanical parameters of silicon cantilevers over-coated with boron-doped diamond films was investigated with laser vibrometer. The increase of resonance to frequency of over-coated cantilever is attributed to the change in spring constant caused by B-NCD coating. Topography and electrical parameters of boron-doped diamond films were investigated by tapping mode AFM and electrical mode of AFM-Kelvin probe force microscopy (KPFM). The crystallite-grain size was recorded at 153 and 238 nm for boron-doped film and undoped, respectively. Based on the contact potential difference data from the KPFM measurements, the work function of diamond layers was estimated. For the undoped diamond films, average CPD of 650 mV and for borondoped layer 155 mV were achieved. Based on CPD values, the values of work functions were calculated as 4.65 and 5.15 eV for doped and undoped diamond film, respectively. Boron doping increases the carrier density and the conductivity of the material and, consequently, the Fermi level.

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Section: Introductionmentioning

confidence: 99%

Section: Introductionmentioning

confidence: 99%

Fabrication and characterization of boron-doped nanocrystalline diamond-coated MEMS probes

et al. 2016

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“…The electrodes of this type have a good chemical and electrochemical stability even in highly aggressive media, a long lifetime and a wide potential window for the water discharge. They could be used effectively in electrochemical sensors [10,11] designed for environment monitoring and biomedical applications [12,13]. They also offer an extremely high detection sensitivity of 10 -6 ÷ 10 -9 M in case of bioanalytes (e.g.…”

Section: Introductionmentioning

confidence: 99%

Characterization of Optical and Electrical Properties of Transparent Conductive Boron-Doped Diamond thin Films Grown on Fused Silica

Bogdanowicz¹

2014

Metrology and Measurement Systems

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A conductive boron-doped diamond (BDD) grown on a fused silica/quartz has been investigated. Diamond thin films were deposited by the microwave plasma enhanced chemical vapor deposition (MW PECVD). The main parameters of the BDD synthesis, i.e. the methane admixture and the substrate temperature were investigated in detail. Preliminary studies of optical properties were performed to qualify an optimal CVD synthesis and film parameters for optical sensing applications. The SEM micro-images showed the homogenous, continuous and polycrystalline surface morphology; the mean grain size was within the range of 100-250 nm. The fabricated conductive boron-doped diamond thin films displayed the resistivity below 500 mOhm cm -1 and the transmittance over 50% in the VIS-NIR wavelength range. The studies of optical constants were performed using the spectroscopic ellipsometry for the wavelength range between 260 and 820 nm. A detailed error analysis of the ellipsometric system and optical modelling estimation has been provided. The refractive index values at the 550 nm wavelength were high and varied between 2.24 and 2.35 depending on the percentage content of methane and the temperature of deposition.

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“…The trends in roughness and refractive index were taken from our previous studies based on Raman spectroscopy and AFM/SEM measurements [19,20]. Deconvolution of Raman spectra gives the sp 3 …”

Section: Theoretical Analysismentioning

confidence: 99%

Laser Reflectance Interferometry System with a 405 Nm Laser Diode for in Situ Measurements of CVD Diamond Thickness

Kraszewski¹,

Bogdanowicz²

2013

Metrology and Measurement Systems

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In situ monitoring of the thickness of thin diamond films during technological processes is important because it allows better control of deposition time and deeper understanding of deposition kinetics. One of the widely used techniques is laser reflectance interferometry (LRI) which enables non-contact measurement during CVD deposition. The authors have built a novel LRI system with a 405 nm laser diode which achieves better resolution compared to the systems based on He-Ne lasers, as reported so far. The system was used for in situ monitoring of thin, microcrystalline diamond films deposited on silicon substrate in PA-CVD processes. The thickness of each film was measured by stylus profilometry and spectral reflectance analysis as a reference. The system setup and interferometric signal processing are also presented for evaluating the system parameters, i.e. measurement uncertainty, resolution and the range of measurable film thickness.

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Amperometric sensing of chemical oxygen demand at glassy carbon and silicon electrodes modified with boron-doped diamond

Cited by 33 publications

References 36 publications

Fabrication and characterization of boron-doped nanocrystalline diamond-coated MEMS probes

Fabrication and characterization of boron-doped nanocrystalline diamond-coated MEMS probes

Characterization of Optical and Electrical Properties of Transparent Conductive Boron-Doped Diamond thin Films Grown on Fused Silica

Laser Reflectance Interferometry System with a 405 Nm Laser Diode for in Situ Measurements of CVD Diamond Thickness

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