Amorphous silicon thin film transistor circuit integration for organic LED displays on glass and plastic

Implementing Cryptography on TFT Technology for Secure Display Applications

“…A number of designs have been proposed in the literature for this purpose. References [5,12] deal with a-Si:H TFTs. These TFTs do not demonstrate very good electronic properties.…”

“…They suffer in particular from low carrier mobility (lower than 1cm 2 /V-s), thus requiring very wide channels to allow sufficient current flow (e.g. Nathan et al [5] report TFTs with channels as wide as 1000µm). Further, p-channel TFTs are not available in a-Si:H technology [4].…”

“…In this context, reference [12] proposes a constant current source composed of 4 TFTs and a storage capacitor. Reference [5] shows an improved version, requiring no storage capacitor.…”

“…In the preferred active matrix configuration, both OLED and LCD pixel arrays are driven by Thin-Film Transistors (TFTs), fabricated on an insulating substrate (typically glass). The TFT active area is formed either traditionally by hydrogenated amorphous Silicon (a-Si:H) [5], more recently by polycrystalline Silicon (polysilicon, poly-Si) [4], or by continuous grain Silicon (CG-Si), described by Sharp as a next-generation variant of poly-Si [6]. The last two technologies demonstrate higher carrier mobility than a-Si:H, thus producing better quality transistors.…”

Transparent, High‐Performance Thin‐Film Transistors with an InGaZnO/Aligned‐SnO2‐Nanowire Composite and their Application in Photodetectors

“…[ 3,4 ] However, amorphous-silicon-based TFTs present the limitations of a low carrier mobility (∼1 cm 2 V −1 s −1 ) accompanied by light degradation. [ 5,6 ] In spite of possessing high carrier mobility, the opacity of TFTs based on polycrystalline silicon (poly-silicon) restricts the aperture ratio for active matrix arrays, and the spatial distribution of the poly-silicon grain structure results in non-uniform device performance over large areas, which limits the scalable fabrication. [ 7 ] As one of the alternative materials, amorphous metal oxides have attracted increasing attention during the past few years, and they are being extensively researched today as the most promising candidates for the next generation of fl at-panel displays.…”