Amorphous silicon position sensitive detectors applied to micropositioning

Contreras, Jaime Contreras; Baptista, Catarina; Ferreira, I.; Costa, Daniel; Pereira, Sónia; Águas, Hugo; Fortunato, Elvira; Martins, Rodrigo; Wierzbicki, R.; Heerlein, H.

doi:10.1016/j.jnoncrysol.2006.02.026

Cited by 13 publications

(6 citation statements)

References 6 publications

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“…The lateral photovoltage (LPV) was found to be strongly dependent on the light spot position with respect to electrodes, which allows fabricating position-sensitive detectors for sensing even minor displacements [6]. The range of application of such detectors is quite extensive and involves automatic control, positioning, surface profiling and other systems [7,8,9]. Surprisingly, the LPE appeared to be sensitive to external magnetic fields [10,11,12,13].…”

Section: Introductionmentioning

confidence: 99%

Magnetic field-driven lateral photovoltaic effect in the Fe/SiO2/p-Si hybrid structure with the Schottky barrier

Волков

Рауцкий

Tarasov

et al. 2018

Physica E: Low-dimensional Systems and Nanostructures

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We demonstrate that the lateral photovoltaic effect in the Fe/SiO 2 /p-Si structure not only strongly depends on the optical radiation wavelength and temperature, but is also sensitive to external magnetic fields. The magnetic field lowers the absolute value of photovoltage regardless of the wavelength and temperature; however, the relative photovoltage variation significantly depends on these parameters. The lateral photovoltage is observed both on the Fe film and Si substrate sides and results from separation of photoinduced electrons and holes in a built-in electric field of the Schottky barrier with their subsequent diffusion to the structure in the lateral direction from the illuminated area. The observed features in the behavior of the lateral photovoltaic effect originate from the variation in the light absorption coefficient of the semiconductor and the related quantum efficiency upon light wavelength variation. In addition, an important role is played by the change in the characteristics of the Schottky barrier at the redistribution of optically generated carriers and temperature variation. The effect of the magnetic field is attributed to the Lorentz force, which bends trajectories of carriers drifting under the action of the Schottky barrier field and, consequently, suppresses the lateral photovoltaic effect.

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Section: Introductionmentioning

confidence: 99%

Magnetic field-driven lateral photovoltaic effect in the Fe/SiO2/p-Si hybrid structure with the Schottky barrier

Волков

Рауцкий

Tarasov

et al. 2018

Physica E: Low-dimensional Systems and Nanostructures

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“…PSDs fabricated from a‐Si/H have been extensively reported with many papers reporting upon novel structures and applications 2–7. Some of these innovations are very large area devices (5 mm × 80 mm), flexible substrate PSDs and microcantilever movement detectors.…”

Section: Introductionmentioning

confidence: 99%

Optimizing the wavelength response in one‐dimensional p‐Si Schottky barrier optical PSDs

Henry

Livingstone

2011

Physica Status Solidi (a)

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This paper reports on the varying wavelength response of optical position detectors made of different Schottky barrier metals, titanium, tantalum and aluminium. The best sensitivities came from the titanium devices, followed by the tantalum devices and finally the aluminium devices. The most linear devices were fabricated from tantalum followed by aluminium and the worst from titanium. The devices responded well under low intensity LED illumination indicating that common and cheap light sources are suitable for producing strong linear responses in these PSDs. Long wavelength illumination usually produced the highest sensitivities, though this depended on the Schottky metal used. Titanium devices averaged an increase of 250% between the responses for short (480 nm) and long wavelength (873 nm) light. The corresponding increase for tantalum devices was 125% while it was 116% for aluminium devices.

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“…Fabrication details, architecture and working principle of these 1D, 2D and 3D PSD detectors were already described in previous papers [ 12 – 15 ], presenting good characteristics for position detection of a direct incident laser beam with a linear resolution of 1 μm [ 16 ]. These types of sensors have also been used for the detection of micro objects, based on reflecting light coming from those objects [ 17 ] and no further work relating these sensors towards the detection of small objects has been reported.…”

Section: Introductionmentioning

confidence: 99%

“…The figures 1a , 1b and 1c were published in reference [ 17 ], Contreras, J.; Baptista, C.; Ferreira, I.; Costa, D.; Pereira, S.; Águas, H.; Fortunato, E.; Martins, R. Wierzbicki, R.; Heerlein, H. Amorphous silicon position sensitive detectors applied to micropositioning. J. Non-Cryst.…”

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confidence: 99%

Micro Cantilever Movement Detection with an Amorphous Silicon Array of Position Sensitive Detectors

Contreras

Costa

Pereira

et al. 2010

Sensors

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The movement of a micro cantilever was detected via a self constructed portable data acquisition prototype system which integrates a linear array of 32 1D amorphous silicon position sensitive detectors (PSD). The system was mounted on a microscope using a metal structure platform and the movement of the 30 μm wide by 400 μm long cantilever was tracked by analyzing the signals acquired by the 32 sensor array electronic readout system and the relevant data algorithm. The obtained results show a linear behavior of the photocurrent relating X and Y movement, with a non-linearity of about 3%, a spatial resolution of less than 2 μm along the lateral dimension of the sensor as well as of less than 3 μm along the perpendicular dimension of the sensor, when detecting just the micro-cantilever, and a spatial resolution of less than 1 μm when detecting the holding structure.

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Amorphous silicon position sensitive detectors applied to micropositioning

Cited by 13 publications

References 6 publications

Magnetic field-driven lateral photovoltaic effect in the Fe/SiO2/p-Si hybrid structure with the Schottky barrier

Magnetic field-driven lateral photovoltaic effect in the Fe/SiO2/p-Si hybrid structure with the Schottky barrier

Optimizing the wavelength response in one‐dimensional p‐Si Schottky barrier optical PSDs

Micro Cantilever Movement Detection with an Amorphous Silicon Array of Position Sensitive Detectors

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