2012
DOI: 10.1109/jsen.2011.2164398
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Amorphous Silicon Position Sensitive Detector Array for Fast 3-D Object Profiling

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Cited by 11 publications
(5 citation statements)
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“…The lateral photovoltaic effect (LPE) has been widely employed in optical transducers and sensors especially for those applications where precise autocontrol measurement is necessary such as machine tool alignment, surface profiling, rotation monitoring and robotic vision owing to its linear relation between the instant electrical signal output and the laser spot position illuminated on the hybrid structure surface. On this account, series of jobs recently have been carried out aiming to seek much more reasonable systems which could present with better sensitivity and higher linearity such as hydrogenated amorphous silicon 1 2 3 , quantum dots 4 , and the blended perovskite based heterojunctions 5 since it was first discovered by Schottky 6 and then expanded by Wallmark in floating Ge p-n junctions in 1957 7 . To date, stemming from this desire, our group also have proposed a variety of nano metal (metal-oxide)-semiconductor (MS/MOS) type or MOS-related structures and have achieved a great deal of remarkable photoelectric effect, including large LPE 4 8 9 10 11 and laser-induced bipolar resistance effect 12 13 .…”
mentioning
confidence: 99%
“…The lateral photovoltaic effect (LPE) has been widely employed in optical transducers and sensors especially for those applications where precise autocontrol measurement is necessary such as machine tool alignment, surface profiling, rotation monitoring and robotic vision owing to its linear relation between the instant electrical signal output and the laser spot position illuminated on the hybrid structure surface. On this account, series of jobs recently have been carried out aiming to seek much more reasonable systems which could present with better sensitivity and higher linearity such as hydrogenated amorphous silicon 1 2 3 , quantum dots 4 , and the blended perovskite based heterojunctions 5 since it was first discovered by Schottky 6 and then expanded by Wallmark in floating Ge p-n junctions in 1957 7 . To date, stemming from this desire, our group also have proposed a variety of nano metal (metal-oxide)-semiconductor (MS/MOS) type or MOS-related structures and have achieved a great deal of remarkable photoelectric effect, including large LPE 4 8 9 10 11 and laser-induced bipolar resistance effect 12 13 .…”
mentioning
confidence: 99%
“…As already described in our previous work [ 7 ], an array of 32 amorphous silicon position sensitive detectors, was integrated inside a self-constructed machine vision system as the vision sensor component and the response was analyzed for the required application. Such work proposed the use of these sensors and relevant systems for 3D object profiling even at high speeds.…”
Section: 128 Psd Array System 3d Object Profile Scanningmentioning
confidence: 99%
“…The experimental setup and procedure for obtaining 3D object profiles with the 32 PSD sensor system were already described elsewhere [ 7 , 8 ] and these also apply for the 128 PSD sensor system. Here, we show results for the detection of the same object when using the 128 PSD array sensor system.…”
Section: 128 Psd Array System 3d Object Profile Scanningmentioning
confidence: 99%
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“…Laser displacement sensors also have high sensitivity and a quick response [29], whereas the volume of a laser displacement sensor is too large for a highly integrated maglev vibration isolation system. Compared with the above-mentioned sensors, the split-type position-sensitive detector (PSD) has an extremely high position resolution, which is a feasible choice to measure the relative position between the base and the platform [30,31]. Moreover, it is more suitable and economical to combine translation and rotation in the expression of coordinate system transformation without adopting additional angle sensors.…”
Section: Introductionmentioning
confidence: 99%