Amorphous silicon detector and thin film transistor technology for large-area imaging of X-rays

Nathan, Arokia; Park, B; Sazonov, Andrei; Sheng, Tao; Chan, Isaac; Servati, Peyman; Karim, K.S.; Charania, T.; Striakhilev, Denis; Ma, Qilong; Murthy, R.V.R.

doi:10.1016/s0026-2692(00)00082-3

Cited by 57 publications

(19 citation statements)

References 21 publications

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“…5 There exist two approaches to achieve stretchability: ͑i͒ coplanar stretchable interconnects ͑bonded to a sub-strate͒ between rigid device islands, 6 and ͑ii͒ wavy layout ͑i.e., small wave͒ throughout the whole circuit system. 7 Both are fabricated on elastometric substrates, and provide some degree of stretchability ͑e.g., 10%͒.…”

Section: Introductionmentioning

confidence: 99%

Mechanics of noncoplanar mesh design for stretchable electronic circuits

Song

Huang²,

Xiao³

et al. 2009

Journal of Applied Physics

150

107

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A noncoplanar mesh design that enables electronic systems to achieve large, reversible levels stretchability ͑Ͼ100%͒ is studied theoretically and experimentally. The design uses semiconductor device islands and buckled thin interconnects on elastometric substrates. A mechanics model is established to understand the underlying physics and to guide the design of such systems. The predicted buckle amplitude agrees well with experiments within 5.5% error without any parameter fitting. The results also give the maximum strains in the interconnects and the islands, as well as the overall system stretchability and compressibility.

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Section: Introductionmentioning

confidence: 99%

Mechanics of noncoplanar mesh design for stretchable electronic circuits

Song

Huang²,

Xiao³

et al. 2009

Journal of Applied Physics

150

107

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“…Polymeric soft substrates with periodic nanostructures have the potential to be important components of many emerging technologies, including paper-like displays, 1 electronic eyes, 2 conformable skin sensors, 3 smart surgical gloves, 4 and health monitoring devices, 5 due to their ease of processing, mechanical flexibility, and highly controllable physicochemical properties. It has been reported that thin film contraction under external mechanical stress can be used to create periodic patterned features on the surface of thin silica or metal films on elastic substrates.…”

Section: Introductionmentioning

confidence: 99%

Effective Parameters for the Precise Control of Thin Film Buckling on Elastomeric Substrates

Ahn¹,

Jang²

2010

Bulletin of the Korean Chemical Society

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This paper reports a simple and versatile technique for generating highly controllable sinusoidal nanostructures on the surface of poly-(dimethylsiloxane) (PDMS). The sinusoidal features were generated by oxidizing PDMS slabs with oxygen plasma, then stretching them by wrapping around a cylinderical surface, and finally allowing them to relax. The wavelength and amplitude could be finely controlled by varying the fabrication conditions such as duration of oxidation, diameter of the glass cylinder, duration of stretching, thickness of the PDMS slabs, and temperature during the second hardening process. The varied trends of the buckling patterns were characterized by using an atomic force microscope.

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“…The detector fabrication starts with the TFTs backplane. The fabrication sequence of the back-channel-passivated TFTs includes 5 lithography steps [2]. A 100-nm-thick Mo layer is sputtered on the Corning glass substrates followed by lithography step to form gate lines (Mask #1).…”

Section: Methodsmentioning

confidence: 99%

High Fill Factor a-Si:H Sensor Arrays with Reduced Pixel Crosstalk

Vygranenko¹,

Sazonov

Striakhilev

et al. 2008

MRS Proc.

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In this paper, we report on low noise, high fill factor amorphous silicon (a-Si:H) image sensor structures for indirect radiography. Two types of the sensor arrays comprising n-i-p photodiodes and m-i-s photosensors have been fabricated. The device prototypes contain 100 x 100 pixels, with a pixel pitch of 139 µm. The active-matrix addressing is provided by low offcurrent TFTs. The sensors are vertically integrated onto the TFT-backplane, by implementing a 3-µm-thick low-k interlayer dielectric. This dielectric layer serves to reduce the data line capacitance and to planarize underlying topography. The detector was designed for reduced dataline resistance and parasitic coupling. Details of the device design and fabrication, along with sensor performance characteristics, are presented and discussed.

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Amorphous silicon detector and thin film transistor technology for large-area imaging of X-rays

Cited by 57 publications

References 21 publications

Mechanics of noncoplanar mesh design for stretchable electronic circuits

Mechanics of noncoplanar mesh design for stretchable electronic circuits

Effective Parameters for the Precise Control of Thin Film Buckling on Elastomeric Substrates

High Fill Factor a-Si:H Sensor Arrays with Reduced Pixel Crosstalk

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