Amorphous Si(Al)OC ceramic from polysiloxanes: bulk ceramic processing, crystallization behavior and applications

Harshe, Rahul; Bălan, Corneliu; Riedel, Ralf

doi:10.1016/j.jeurceramsoc.2003.10.016

Cited by 182 publications

(162 citation statements)

References 20 publications

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“…The IR spectra were obtained by Spectrum GX (Perkin Elmer Japan Co., Ltd) with KBr pellet method. 29 Si NMR spectra were obtained by UNITY INOVA 300 MHz (Varian Technologies Japan Limited) using the CP-MAS technique (4.0 ms pulse, 10 s delay). Thermogravimetric analysis was performed by TAS-100 (Rigaku) in an Ar gas flow.…”

Section: Methodsmentioning

confidence: 99%

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Silicon carbide particle formation from carbon black -polymethylsilsesquioxane mixtures with melt pressing

Narisawa

Yasuda

Mori

et al. 2008

J. Ceram. Soc. Japan

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Precursors for silicon carbide nano particles were prepared from carbon black and polymethylsilsesquioxane (PMSQ). Ceramization process of PMSQ was characterized as preliminary information. The 29 Si NMR study indicated the existence of SiC 3 O (or SiC 4 ) environment even at 1073 K. The chemical composition of pyrolyzed PMSQ was SiO 1.5 C 0.68 . Carbon black (CB) was dispersed in a PMSQ benzene solution and the mixture was freeze-dried to obtain precursor powders. The powders were hot pressed at 573 K for making contacts between CB and PMSQ. The cured precursor sheets were crushed and heat-treated at 1838 K in an inert atmosphere to synthesize SiC particles with a carbothermal reduction process. The conversion process of the CB-PMSQ hybrids to SiC was monitored by thermogravimetric analysis. The influence of the size and content of carbon blacks on conversion rates and the resulting SiC particle morphology was investigated.

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Section: Methodsmentioning

confidence: 99%

“…The second mass loss is observed at 973-1073 K. Ceramic yield at 1273 K is 83 mass. Figure 2 shows 29 Si NMR and IR spectra of the resin pyrolyzed at various temperatures. The original 29 Si NMR spectrum possesses a main signal of a T (SiCO 3 ) environment at -65 ppm with a shoulder at -57 ppm.…”

mentioning

confidence: 99%

Silicon carbide particle formation from carbon black -polymethylsilsesquioxane mixtures with melt pressing

Narisawa

Yasuda

Mori

et al. 2008

J. Ceram. Soc. Japan

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“…However, the linear shrinkages in axial and radial directions are ~26% and ~27% respectively and the volumetric shrinkage is ~67%. Harshe et al [7] and Weisbarth and Jansen [32] reported axial shrinkage of ~16% and ~19% for bulk SiOC and SiBN 3 C, respectively. Henceforth, the shrinkage occuring in these ceramics could be considered as a useful indication of densification.…”

Section: Bulk Compactsmentioning

confidence: 99%

“…This is attributed to the replacement of a part of its divalent oxygen atoms by the tetravalent carbon atoms, resulting in a stronger 3-dimensional network in contrast to silica, thereby enhancing the potential of the material [7]. Polysiloxanes are widely-used polymer precursors for the production of SiOC because of the ease of availability, low cost and flexibility to handle in atmospheric ambience.…”

Section: Introductionmentioning

confidence: 99%

Processing and characterization of polymer precursor derived silicon oxycarbide ceramic foams and compacts

2013

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This work focused on the fabrication of silicon oxycarbide ceramic (SiOC) foams as well as dense compacts using poly(hydridomethylsiloxane) (PHMS) as a polymer precursor. The room-temperature cross-linking of PHMS was achieved by the addition of 1,4-diazabicyclo [2.2.2] octane (DABCO) with the release of hydrogen gas as a by-product. This resulted in self-blowing of the polymer precursor at room temperature and thereby offered the possibility of producing SiOC foams without the need of any external blowing agents. We also reported the fabrication of crack-free silicon oxycarbide compacts by cold compaction and pyrolysis route using polyvinyl alcohol (PVA) as a processing additive. Cylindrical-shaped pellets were pyrolysed at 1300 ℃ in argon atmosphere with a ceramic yield of approximately 85%. Increased resistance to phase separation and crystallization up to 1400 ℃ was attributed to the presence of large volume fraction of free carbon in the material which was confirmed by Raman spectroscopy.

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“…First, amorphous SiOC possesses high crystallization temperatures (excess of 1300 • C), good oxidation, and creep resistance, making it a promising candidate for usage under extreme conditions [15][16][17][18][19]. As a new kind of irradiation tolerant material, recent studies show that amorphous SiOC retained its amorphous microstructure after both He and Kr irradiation from room temperature to 600 • C, with damage levels up to 20 displacements per atom (dpa) [20,21].…”

Section: Introductionmentioning

confidence: 99%

Temperature-Dependent Helium Ion-Beam Mixing in an Amorphous SiOC/Crystalline Fe Composite

Price

Shao

et al. 2016

Metals

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Abstract:Temperature dependent He-irradiation-induced ion-beam mixing between amorphous silicon oxycarbide (SiOC) and crystalline Fe was examined with a transmission electron microscope (TEM) and via Rutherford backscattering spectrometry (RBS). The Fe marker layer (7.2 ± 0.8 nm) was placed in between two amorphous SiOC layers (200 nm). The amount of ion-beam mixing after 298, 473, 673, 873, and 1073 K irradiation was investigated. Both TEM and RBS results showed no ion-beam mixing between Fe and SiOC after 473 and 673 K irradiation and a very trivial amount of ion-beam mixing (~2 nm) after 298 K irradiation. At irradiation temperatures higher than 873 K, the Fe marker layer broke down and RBS could no longer be used to quantitatively examine the amount of ion mixing. The results indicate that the Fe/SiOC nanocomposite is thermally stable and tends to demix in the temperature range from 473 to 673 K. For application of this composite structure at temperatures of 873 K or higher, layer stability is a key consideration.

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Amorphous Si(Al)OC ceramic from polysiloxanes: bulk ceramic processing, crystallization behavior and applications

Cited by 182 publications

References 20 publications

Silicon carbide particle formation from carbon black -polymethylsilsesquioxane mixtures with melt pressing

Silicon carbide particle formation from carbon black -polymethylsilsesquioxane mixtures with melt pressing

Processing and characterization of polymer precursor derived silicon oxycarbide ceramic foams and compacts

Temperature-Dependent Helium Ion-Beam Mixing in an Amorphous SiOC/Crystalline Fe Composite

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