Amorphous Phase Influence on the Optical Bandgap of Polysilicon

Rotaru, C.; Nastase, Samuel A.; Tomozeiu, N.

doi:10.1002/(sici)1521-396x(199901)171:1<365::aid-pssa365>3.0.co;2-m

Cited by 35 publications

(17 citation statements)

References 7 publications

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“…As a first approximation, we can estimate the corrected gap value to be 21% larger than the experimental value for c-Si. This gives a gap value of 1.36 eV for a-Si, which is in agreement with experiments, where it ranges from 1.2 to 1.6 eV [25,26].…”

Section: Resultssupporting

confidence: 90%

First Principles Study of Boron in Amorphous Silicon

et al. 2008

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We have carried out an ab initio simulation study of boron in amorphous silicon. In order to understand the possible structural environments of B atoms, we have studied substitutionallike (replacing one Si atom in the amorphous cell by a B atom) and interstitial-like (adding a B atom into an interstitial space) initial configurations. We have evaluated the Fermi-level dependent formation energy of the neutral and charged (±1) configurations and the chemical potential for the neutral ones. For the interstitial-like boron atom, we have find an averaged formation energy of 1.5 eV. For the substitutional case, we have found a dependence of the chemical potential on the distance to Si neighbors, which does not appear for the interstitial ones. From MD simulations, we could observe a diffusion event for an interstitial-like boron atom with a migration barrier of 0.6 eV.

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Section: Resultssupporting

confidence: 90%

First Principles Study of Boron in Amorphous Silicon

et al. 2008

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“…Theoretical analysis on mixed phase silicon suggests a gradual decrease of the Tauc gap with increasing X c . 33 A contradictory observation is made in the case of 100 nm samples, where the optical gap seems to increase considerably between 150 and 200 mJ cm −2 . The same phenomenon can be seen with 300-nm samples, although less significantly.…”

Section: ͑2͒mentioning

confidence: 98%

Thickness dependence of properties of excimer laser crystallized nano-polycrystalline silicon

Adikaari¹,

Silva²

2005

Journal of Applied Physics

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Excimer laser crystallization is used to produce layered nanocrystalline silicon from hydrogenated amorphous silicon, using a partial melting process. Three types of hydrogenated amorphous silicon samples, 100, 300, and 500 nm thick, were laser treated in order to investigate the changes to the structural, optical, and electrical properties as a function of amorphous silicon thickness with excimer laser crystallization. The resulting nanocrystalline thin films were characterized using Raman spectroscopy, optical absorption measurements, atomic force microscopy, forward recoil spectrometry, and current-voltage measurements. The relationship of crystalline volume and laser energy density was established, along with the behavior of the optical gap and its relationship to hydrogen content. Surface roughness effects are discussed in the context of photovoltaic applications. The effect of increased mobility on photoconductivity after excimer laser crystallization is also examined.

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“…The band gap of the amorphous particles is reported to be higher when compared to their crystalline counterparts. The increased degree of disorder in amorphous particles results in decreased absorbance leading to higher band gap energy (Rotaru et al, 1999). The optical band gap of the particles heated at 100°C is 1.3 eV whereas for the particles heated at 400°C the band gap increased significantly to 1.6 eV which can also be explained by the loss of crystallinity and accompanying phase transformation.…”

Section: Uv-vis Spectroscopymentioning

confidence: 98%

Simple one-pot sonochemical synthesis of copper sulphide nanoparticles for solar cell applications

Singh

Manivannan

Victoria

2019

Arabian Journal of Chemistry

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Copper sulphide nanoparticles for solar cell applications were synthesized by a single step sonochemical method using copper acetate and thiourea as precursors. The effects of sonication time, ultrasonic bath temperature and annealing temperature on particle properties were studied. Synthesized particles were characterized using scanning electron microscope, transmission electron microscope, X-ray diffraction spectrophotometer and UV-visible spectrophotometer. The particles were found to be a mixture of chalcocite, covellite and djurleite. The optical band gap of the particles was found to be in the range of 1.6-2.1 eV. Heat treatment of the particles was found to give rise to needle shaped particles while a bath temperature of 55°C yielded few nanoplates. ª 2015 The Authors. Production and hosting by Elsevier B.V. on behalf of King Saud University. This is an open access article under the CC BY-NC-ND license (http://creativecommons.org/licenses/by-nc-nd/4.0/).

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Amorphous Phase Influence on the Optical Bandgap of Polysilicon

Cited by 35 publications

References 7 publications

First Principles Study of Boron in Amorphous Silicon

First Principles Study of Boron in Amorphous Silicon

Thickness dependence of properties of excimer laser crystallized nano-polycrystalline silicon

Simple one-pot sonochemical synthesis of copper sulphide nanoparticles for solar cell applications

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